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    KM68B257 Search Results

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    KM68B257 Price and Stock

    Samsung Semiconductor KM68B257AJ-8

    STANDARD SRAM, 32KX8, 8NS, BICMOS, PDSO28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM68B257AJ-8 1,091
    • 1 $12
    • 10 $12
    • 100 $12
    • 1000 $4.2
    • 10000 $4.2
    		Buy Now

    Samsung Semiconductor KM68B257AJ-10

    32K X 8 STANDARD SRAM, 10 ns, PDSO28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM68B257AJ-10 58
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    KM68B257 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 ,1 0 ,12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM68B257AJ-8:185mA (Max.)


    OCR Scan     		PDF KM68B257A 110mA KM68B257AJ-8 185mA KM68B257AJ-9 KM68B257AJ-10 175mA KM68B257AJ-12 165mA

    Untitled

    Abstract: No abstract text available
    Text: KM68B257A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 8 ,1 0 ,1 2 ns Max. • Low Power Dissipation Standby (T T L ): 110 mA (Max.) (C M O S ): 20 mA (Max.) Operating K M 68B 257A J-8 :1 8 5 mA (Max.)


    OCR Scan     		PDF KM68B257A 32Kx8 KM68B257AJ-10 KM68B257AJ-12 KM68B257AJ 28-pin KM68B257A 144-bit

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E » 7=^4142 DQIOTST G ÊSSMGK P R ELIM INA R Y “ BiCMOS SRAM KM68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation


    OCR Scan     		PDF KM68B257 195mA, 175mA, 150mA 28-pin 28-pln KM68B257 144-bit

    KM68B257AJ-8

    Abstract: A26cl
    Text: PRELIMINARY KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) Operating KM68B257AJ-8: 185mA (max.)


    OCR Scan     		PDF KM68B257A KM68B257AJ-8: 185mA KM68B257AJ-10: 175mA KM68B257AJ-12: 165mA KM68B257AJ: 28-pin KM68B257A KM68B257AJ-8 A26cl

    Untitled

    Abstract: No abstract text available
    Text: SA M S UN G E L E C T R O N I C S INC b?E D • T T h M l M S D G 17 bü l 754 « S P I C K KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 9 , 1 0 , 12ns Max. • Low Power Dissipation


    OCR Scan     		PDF KM68B257A 68B257AJ-8 68B257AJ-9 68B257AJ-10 KM68B257AJ-12 165mA KM68B257A 144-bit

    KM68B257A-8

    Abstract: No abstract text available
    Text: KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM 68B 257AJ-8:185m A (Max.)


    OCR Scan     		PDF KM68B257A 110mA 257AJ-8 KM68B 257AJ-9 KM68B257AJ-10 175mA KM68B257AJ-12 165mA KM68B257AJ: KM68B257A-8

    xxww

    Abstract: KM68B257AJ-8
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 clb 4 m s []0 1 7 b 0 1 7 5 H m s h g k BiCMOS SRAM KM68B257A 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fa s t A c c e s s T im e : 8 , 9 , 1 0 , 12n s M a x. • Low P o w er D issipation


    OCR Scan     		PDF KM68B257A 017b01 110mA KM68B257AJ-8: 185mA KM68B257AJ-9: KM68B257AJ-10: 175mA KM68B257AJ-12: xxww KM68B257AJ-8

    SOJ 44

    Abstract: 1MX1 KM6865
    Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001


    OCR Scan     		PDF KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation —Standby: 20mA —Operating: 195mA, 175mA, 150mA


    OCR Scan     		PDF KM68B257 195mA, 175mA, 150mA 68B257 44-bit

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM68B257A 32,768 W O R D x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM68B257AJ-8: 185mA (Max.)


    OCR Scan     		PDF KM68B257A 110mA KM68B257AJ-8: 185mA 68B257AJ-9 KM68B257AJ-10 175mA KM68B257AJ-12 165mA KM68B257AJ:

    KM68B257

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Tim e — Commercial: 10ns, 12ns, 15ns — 6ns O utput Enable tim e • Low Power Dissipation — Standby: 20mA — O perating: 195m A, 175m A, 150mA


    OCR Scan     		PDF KM68B257 150mA 68B257 44-bit KM68B257

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    KM28C64A

    Abstract: No abstract text available
    Text: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19


    OCR Scan     		PDF KM75C03A. KM75C101A. KM75C102A. KM75C103A. KM75C104A. KM28C64A

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		PDF 010/J/T KM68512 12BKX8 km6865b

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference

    AG10

    Abstract: km416c256 1m maskrom KM68B1002-10
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10


    OCR Scan     		PDF KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10