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    Untitled

    Abstract: No abstract text available
    Text: 68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 ,1 0 ,12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating 68B257AJ-8:185mA (Max.)


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    PDF KM68B257A 110mA KM68B257AJ-8 185mA KM68B257AJ-9 KM68B257AJ-10 175mA KM68B257AJ-12 165mA

    Untitled

    Abstract: No abstract text available
    Text: SA M S UN G E L E C T R O N I C S INC b?E D • T T h M l M S D G 17 bü l 754 « S P I C K 68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 9 , 1 0 , 12ns Max. • Low Power Dissipation


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    PDF KM68B257A 68B257AJ-8 68B257AJ-9 68B257AJ-10 KM68B257AJ-12 165mA KM68B257A 144-bit

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


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    PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM 68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation —Standby: 20mA —Operating: 195mA, 175mA, 150mA


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    PDF KM68B257 195mA, 175mA, 150mA 68B257 44-bit

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM 68B257A 32,768 W O R D x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating 68B257AJ-8: 185mA (Max.)


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    PDF KM68B257A 110mA KM68B257AJ-8: 185mA 68B257AJ-9 KM68B257AJ-10 175mA KM68B257AJ-12 165mA KM68B257AJ:

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


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    PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z

    KM68B257

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM 68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Tim e — Commercial: 10ns, 12ns, 15ns — 6ns O utput Enable tim e • Low Power Dissipation — Standby: 20mA — O perating: 195m A, 175m A, 150mA


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    PDF KM68B257 150mA 68B257 44-bit KM68B257