ILL111 Search Results

Contextual Info: ibbulgin 4mm LED options 3 BBM l|;ili11|ill1111inm ilillSIllIfItttlitl'M Specification Red Green Yellow Blue Luminous Intensity @10m A: 2.5mcd 2.5mcd 2.5mcd 12mcd Forward voltage: 2.0V 2.1V 2.0V 3.5V Cont. Forward Current max : 30mA 30mA 20mA 30mA Power Dissipation (max) @ 20°C Ambient:

MOD-YSJ88YA03C

Abstract: S2M2
Contextual Info: 1 7. 4 ±0- 05 8 - 0 . 8 ±0-05 a. 2-1.6' P. T. H. Pos# . 8 4 - R O . 5-0., 2- R1 r>^ f 5 +r 1 ( T. H) I. _ ililPnlilii_lili_^ lili_Jr Pos# . ill111illillíilíilílifl ^ Pos# . 2 i 16 Mi n. 2 0 ±0' 05 Recommended panel c u t-o u t dimensions (Thickness:

Contextual Info: Datacom, Video Link, Intra-Office Telecom, WDM Duplex Device Wavelength Division Multiplex , MF699 ST Ethernet 10 or 100Mbps Datacom, Video Links, or Intra- Token Ring Office Telecom Applications. It Fibre Channel 266Mbps emits optical power at 1320nm FDDI

Contextual Info: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 (P 3 - P 2 - P 1 ) : (J 6 - J 3 ) : (J 2 - J 1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: (J 6 - J 3 ) = (J2- J1 ) (P 6 - P 4

TC5032P

Abstract: TRF 509 6-DIGIT DECADE COUNTER TR BC Digital Pulse Counter - Two Digit 3 Digit counter diagram 6 digit counter
Contextual Info: TC5032P C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC5032P 6-DIGIT DECADE COUNTER TC5032P is six digit decimal counter whose BCD output of each digit is dynamically output in sequence from the higher order digit on BCD OUTPUT in synchronism with SCAN input. As the carry outputs are available

mppt chip

Abstract: mppt ic TMP86P808N FCJ211 MPPT CONTROLLER BLOCK DIAGRAM 808 nm 100 mw 808 nm 1000 mw mppt BASED DC TO DC CONVERTER mppt code zip13
Contextual Info: TOSHIBA 2001-01-17 TOSHIBA Original CMOS 8-bit Microcontroller TLCS-870/C S e rie s TM P86C408M/N/DM ,TM P86C808M/N/DM TM P86P808M/N/DM Databook 4th Edition TOSHIBA CORPORATION TOSHIBA Under Development TMP86C408/808 CMOS 8-Bit Microcontroller TM P86C408M /N/DM , TM P86C808M /N/DM

Contextual Info: ZN503AJ/ZN504CJ/ZN504E 10-BIT MICROPROCESSOR-COMPATIBLE A-D CONVERTERS WITH PARALLEL/SERIAL OUTPUT The ZN503/4 range of fast successive approximation A-D converters combine several innovations on a monolithic silicon integrated circuit. This 28 pin device consists of a

2755-LD1

Abstract: ALLEN-BRADLEY ej LIP421Y 9743x
Contextual Info: SCANNERS 2755LD1, -LD2; 2755G3,46 BAR CODE PROGRAMMING GUIDE GUIDE DE PROGRAMMATION STRICHCODE PROGRAMMIERANLEITUNG GUIDA ALLA PROGRAMMAZIONE DmDlCl -A BARRE GUIA DE PROGRAMACldN -BAR CODE Wedge Mode Mode Interface Clavier Terminal Modus Modo Lettura Modo Wedge

hst 1025

Abstract: 3M Touch Systems
Contextual Info: SONY LCX016AM 3.3cm 1.3-inch Black-and-White LCD Panel Preliminary Description The LCX016AM is a 3.3cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with a built-in peripheral driving circuit. Use of three LCX016AM

Contextual Info: FU JITSU CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 April 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY (EPROM) The Fujitsu MBM27C1000 EPROM is a high speed read-only static memory that Is

am29338

Abstract: ECL86 ECL 86 DG Y27 D2259 D1796 D2110-4 ScansUX970 am29c332
Contextual Info: Am29338 32-Bit Byte Queue ADVANCE INFORMATION Asynchronous and Synchronous Operation - Supports communication between systems with differ­ ent clocks and different bus widths Retransm it - Data can be read out repeatedly Horizontal Cascading - Up to four devices allow simultaneous input or output

9T20T

Abstract: BA 59 04A FP TDA 5101 TC59 DL0054 4CZ2 it16t CA-23 1312080bz
Contextual Info: TOSHIBA TENTATIVE TC59RM718MB/RB/GB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The D irect R a m b u s T M DRAM D irect RDRAM ia a general-purpose high perform ance memory device suitable for use in a broad range of applications including com puter memory, graphics, video

HY5117404A

Abstract: HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117
Contextual Info: “H Y U N D A I HY5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai’s CM OS silicon gate process technology as w ell as advanced circuit techniques to provide wide