VH73
Abstract: VL222 VH152 Vl152 fch 2188 vh66 VL77 VL129 VH226 VL223
Text: . S6C0671 8 BIT 384 CHANNEL TFT-LCD SOURCE DRIVER February. 2000. Ver. 0.0 Prepared by: Myoung-Sik, Suh mail to: mssuh@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express
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S6C0671
S6C0671
VGMA10
VGMA18
VGMA18
VH73
VL222
VH152
Vl152
fch 2188
vh66
VL77
VL129
VH226
VL223
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CT34
Abstract: lm 4382 F 7389 11-B K210
Text: 4+1+ 503316(7389(! 43:3;-3 (!$$< !"#$%&'(')*+,-+.,(/0*1*,2*,3 43?:)2@12*. O>+$P/:-LM<$'7"?(;+8$)>+$'7"?+*$>(=>$'+75"7E&*%+$ "5$L=+7+$Q@8)+E8R$'>")";(";+$)+%>*"6"=@$(*$&$?+7@$ '7&%)(%&6,$%"8)G+55+%)(?+$'&%N&=+.$O>+$P/:-G8+7(+8$ 5+&)H7+8$>(=>$6(*+&7()@$&*;$6"#$%&'&%()&*%+$"?+7$&$
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VH73
Abstract: VL222 dx3 308 VL221 VL109 VL83 vl224 VH102 VH165 VL205
Text: . S6C0671 8 BIT 384 CHANNEL TFT-LCD SOURCE DRIVER February. 2000. Ver. 0.0 Prepared by: Myoung-Sik, Suh mail to: mssuh@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express
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Original
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S6C0671
S6C0671
VGMA10
VGMA18
VH73
VL222
dx3 308
VL221
VL109
VL83
vl224
VH102
VH165
VL205
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23/yamaha dx7
Abstract: VL183
Text: . S6C0670 8 BIT 384 / 402 CHANNEL TFT-LCD SOURCE DRIVER March. 2000. Ver. 1.0 Prepared by: Myoung-Sik, Suh mail to: mssuh@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express
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S6C0670
S6C0670
VGMA16
23/yamaha dx7
VL183
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vh73
Abstract: VH222 VL116 VH80 VL248 specifications of ic 1408 VL139 VH250 VH81 VH165
Text: . S6C0670 8 BIT 384 / 402 CHANNEL TFT-LCD SOURCE DRIVER March. 2000. Ver. 1.0 Prepared by: Myoung-Sik, Suh mail to: mssuh@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express
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Original
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S6C0670
S6C0670
VGMA16
vh73
VH222
VL116
VH80
VL248
specifications of ic 1408
VL139
VH250
VH81
VH165
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PDF
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A109D
Abstract: max3843 lcd hyundai WWD 3P hyundai hy 555
Text: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes H yundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V17400B
51V17400B
0260X68040)
157BSC
1AD48-00-MAY95
HY51V17400BJ
HY51V17400BSD
A109D
max3843
lcd hyundai
WWD 3P
hyundai hy 555
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HY5118160JC70
Abstract: HY5118160 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34
Text: HY5118160 Series • • H Y U N D A I 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5118160
16-bit
16-bit.
0-629CB1
10-2g2)
016B3
000M750
HY5118160JC70
hy5118160jc
4b75
D014G
ms3417
hy5118160jc-70
KS-5
pc145
016B34
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PDF
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HY5116404
Abstract: No abstract text available
Text: HY5116404A Series •HYUNDAI 4M X 4-b it C M O S DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116404A utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY5116404A
1AD37-10-MAY95
HY5116404AJ
HY5116404ASLJ
HY5116404AT
HY5116404ASLT
HY5116404
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phct
Abstract: baw16 OCB-15 wpp3 gc137 mcag1 d0ji
Text: H Y 5 1 V 4 2 6 0 B S e r ie s 256K X 16-bit CMOS DRAM with 2CAS " H Y U N D A I DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve
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OCR Scan
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HY51V4260B
16-bit
400mil
40pin
40/44pin
4fci750Ã
1AC26-10-MAY95
phct
baw16
OCB-15
wpp3
gc137
mcag1
d0ji
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PDF
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512Kx1 DRAM
Abstract: No abstract text available
Text: HY51V4100B Series «HYUNDAI 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V4100B
304x1-bit.
HY51V4100B
Schottk014
27J8S
50flfl
1AC10-10-MAY95
512Kx1 DRAM
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PDF
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HY5118164B
Abstract: HY5118164BJC60 HY5118164BJC V074 HY5118164BSLRC JD 16 CFt 450 HT
Text: • • H Y U N D A I H Y 5 1 1 8 1 6 4 B S e r ie s 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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16-bit
HY5118164B
16-bit.
Q1480C3
0JJ00
1AD58-10-MA
HY5118164BJC
HY5118164BJC60
V074
HY5118164BSLRC
JD 16
CFt 450 HT
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PDF
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WP-13
Abstract: ta22a DE456 1A039
Text: Y Trt I II N i l A l u n u m 4M X H Y 5 1 V 1 6 4 0 4 A S e r ie s 4-bit CMOS DRAM with Extended Data out DESCRIPTION The HY51V16404A is the new generation and fast dynamic RAM organized 4,194.304 x 4-bit. The HY51V16404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V16404A
capa590)
1AD39-KMMAY95
HY51V16404AJ
HY51V16404ASLJ
HY51V16404AT
51V16404ASLT
WP-13
ta22a
DE456
1A039
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PDF
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I HY51V4264B Series 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V4264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design technique to achieve fast
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OCR Scan
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HY51V4264B
16-bit
400mil
40pin
40/44pin
4b750flfl
00G43D3
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PDF
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Ck37
Abstract: No abstract text available
Text: • « H Y U N D A I H Y 5 1 4 4 0 0 A S e r ie s 1 Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY514400A
families075
1AC07-30-MAY95
HY514400AJ
HY514400ALJ
HY514400AT
4400ALT
Ck37
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