m4512
Abstract: HYM59256AM
Text: HYUNDAI 3TE ELECTRONI CS » m 4b750flö Ü0 0 Q3 7 Ô T •HYNK 256KX 9-Bit CMOS DRAM MODULE M451201A-APR9T DESCRIPTION FEATURES The HYM59256A is a 256K words by 9bits dynamic RAM m odule and consists o f Fast Page mode CM OS DRAMs of two HY534256J in 20/26 pin SOJ and one HY53C256LF in 18
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4b750flö
256KX
M451201A-APR9T
HYM59256A
HY534256J
HY53C256LF
22\sF
HYM59256AM
HYM59256AP
HYM59256A-70
m4512
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M2312
Abstract: M231202B-MAY92 hyundai HY62C256
Text: H Y U N D A I E L E C T R O N I C S S I E » • 4b750flfl □ □ □ 1 1 3 ci 3 7 4 ■ H Y N K HY62C256 •Hyundai SEMICONDUCTOR 32KX8-Bit CM O S SRAM M 231202B -M A Y 92 T 4 t> -Z V \3 DESCRIPTION FEATURES The HY62C256 is a high speed low power, 32,768 words by 8-bit CMOS static RAM fabri
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HY62C256
4b750flfl
113ci
32KX8-Bit
M231202B-MAY92
PACKAGE-600Ã
M2312
hyundai HY62C256
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Untitled
Abstract: No abstract text available
Text: HY UND AI E L E C T R O N I C S SIE D 4b750flfl 0 Q 0 1 1 Ö 2 S4S » H Y N K PRELIMINARY •HYUNDAI HY234001 SEMICONDUCTOR 512KX 8-Bit C M O S MASK ROM M631200A-MAY92 DESCRIPTION FEATURES The HY234001 is mask-programmable ROM organized as 524,288 words by 8 bits. It
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4b750flfl
HY234001
512KX
M631200A-MAY92
HY234001
Speed-150/200/250
220mW
32-pin
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HY62C64
Abstract: 8192X8BIT
Text: H Y U N D A I E L E C T R O N I C S 03 D E | 4b7500â Q000117 M T-46-23-12 PRELIMINARY N f SEMICONDUCTOR NOVEM BER 1986 DESCRIPTION FEATURES The HYUNDAI HY62C64 is a 65, 536-bit static random access memory organized as 8192 words by 8 bits and operates from a single 5 volt supply It is built
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Q000117
T-46-23-12
HY62C64
536-bit
28-pin,
HY62C64/L-45
HY62C64/L-55
HY62C64/L-70
HY62C64/L
8192X8BIT
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4b23
Abstract: HY51C256 hyundai 235 moo 42j
Text: HYUNDAI ELECT RO NI CS Û3 Ü>ËJ 4b750ññ ODDQISI *4 | ~ 467 508 8 HYUNDAI ELEC TR ON ICS 83D 00151 D T-M cr23>-|5 O C TO B ER 1986 D ESC R IPTIO N , The HY51C256L offers a typical standby current as low as 10// A w hen RAS Vdd—0.2V. During stand by (i.e. only refresh cycles the refresh period can
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4b750Ã
HY51C256/L
144x1-bit
HY51C256X
100ns
120ns
150ns
200ns
300MIL
4b23
HY51C256
hyundai 235
moo 42j
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HY514100-80
Abstract: ascl2
Text: HYUNDAI ELECTRONICS BTE D • 4b75DÖÖ DDDG311 S BIHYNK PRELIMINARY ^ 4M X 1-Bit CMOS DRAM? M191200A-MAY91 -r -H ê -1 2 -ïS DESCRIPTION FEATURES • Low power dissipation - Operating Current, 100ns : 80mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lmA(max.)
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QDDG311
HY514100
M191200A-M
T-H6-23-Ã
100ns
HY514100.
512KX8
HY514100-80
ascl2
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HY531000
Abstract: ci 7483 ic 7483 block diagram DIN 748-3 INTERNAL DIAGRAM OF IC 7483
Text: HYUNDAI ELECTRONICS SIE D •HYUNDAI • 4b750flfl OOOObll ^02 ■ HYNK H SEMICONDUCTOR Y 5 3 _ I M 1 I- H ii M ( s I IIK V M B M 171202B-JAN92 DESCRIPTION FEATURES The HY531000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac
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750flfl
HY531000
576X1
M171202B-JAN92
0j516
ci 7483
ic 7483 block diagram
DIN 748-3
INTERNAL DIAGRAM OF IC 7483
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ci 28448
Abstract: No abstract text available
Text: HYUNDAI ELECTRONICS SIE D • 4b750êfl DDDDbTT b?ñ « H Y N K PRELIMINARY •HYUNDAI SEMICONDUCTOR HY534256A 2' iK 4-ill I ( M( S m m i M 1C1200A-JAN92 DESCRIPTION TheHY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI
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HY534256A
4b75Dflfl
000b7cÃ
M1C1200A-JAN92
PACKAGE-300
400MIL
ci 28448
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spindle and VCM motor controller
Abstract: Tdk Vcm micro controller 6811 spindle and VCM motor controller 64 lead
Text: SSI 32H6811/6811B Servo Motor Speed 5V Driver/DACs cé m M b n s ' A TDK Group/Company Advance Inform ation May 1994 DESCRIPTION FEATURES The SSI 32H6811/6811B Servo and MSC Drivers, a CMOS monolithic integrated circuit housed in a 64-lead TQFP package, operates from a single 5V
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32H6811/6811B
32H6811/6811B
64-lead
10-bit
spindle and VCM motor controller
Tdk Vcm
micro controller 6811
spindle and VCM motor controller 64 lead
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bPA20
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V17100Ais
HY51V17100A
HY51V17100A
1AD22-00-MAY94
4b750flfl
HY51V17100AJ
HY51V17100ASLJ
HY51V17100AT
HY51V17100ASLT
bPA20
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.
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HYM581000A
HY514400
HYM581000AM
50nYCLE
1BB03-20-MAY93
061MAX.
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Untitled
Abstract: No abstract text available
Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY514100B
HY514100B
4b750Ã
000413b
1AC09-10-MAY95
HY514100BJ
HY514100BLJ
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Untitled
Abstract: No abstract text available
Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117400A
HY5117400A
117400A
1AD27-10-MAY9S
HY5117400AJ
HY5117400AT
Y5117400ASLT
HY5117400AR
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI HYM564404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5116404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01
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HYM564404A
64-bit
HY5116404A
HYM564404AKG/ATKG/ASLKG/ASLTKG
DQ0-DQ63)
4b75oaa
1CE16-10-APR95
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532124A W-Series 1M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532124A is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 42/42 pin S O J or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are
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HYM532124A
32-bit
HY5118164B
HYM532124AW/ASLW
HYM532124AWG/ASLWG
HYM532124A
HYM532124AT
A0005
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5117100A
HY5117100A
HY5117100Ato
tRASI13)
1RP02)
1AD20-10-MAY94
HY51171OOA
HY5117100AJ
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HY5117410 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced
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HY5117410
1AD06-10-APR93
HY5117410JC
HY5117410UC
HY5117410TC
HY5117410LTC
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HYM53
Abstract: No abstract text available
Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each
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HYM536A810A
36-bit
HYM536A81OA
HY5117400A
HYM536A81OAM/ASLM
HYM536A810AMG/ASLMG
HYM536A800A/ASL
1CF16-10-AUG95
HYM53
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HY5116100B
Abstract: No abstract text available
Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116100B
TheHY5116100B
1AD41-00-MAY9S
4b750Ã
0GG435b
HY5116100BJ
HY5116100BSLJ
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Untitled
Abstract: No abstract text available
Text: HYM581600 M-Series •H Y U N D A I 16M X 8-bit CMOS ORAM MODULE DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor Is mounted for
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HYM581600
HY5116100
22/xF
HYM581600M/LM/TM/LTM
891MAX
HYM581600TM/LTM
25IMAX.
1BD01-01-FEB94
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HYM536410MG
Abstract: No abstract text available
Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling
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HYM536410
36-blt
36-bit
HY5117400
HY514100A
HYM53641OM/LM
HYM536410MG/LMG
1CE06-20-MAV94
HYM536410MG
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for
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HYM581600
HY5116100
HYM581600M/LM/TM/LTM
HYM581600TM/LTM
1BD01-00-MAY93
HYM581600M
HYM581600LM
HYM581600TM
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HY531000 Series 1Mx 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY531000
300mil
1AB04-30-APR93
HY531000S
HY531000J
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Untitled
Abstract: No abstract text available
Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.
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HYM581000B
HY514400A
22//F
HYM581000BM/BLM
1BB05-00-MAY93
4b750fifi
4b75Dflfl
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