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Vishay Semiconductors BZX384B75-HE3-08 DIODE ZENER 75V 200MW SOD323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BZX384B75-HE3-08	Digi-Reel	23,340		1	1 $0.16 10 $0.109 100 $0.16 1000 $0.05 10000 $0.05	Buy Now
	BZX384B75-HE3-08	Cut Tape	23,340		1	1 $0.16 10 $0.109 100 $0.16 1000 $0.05 10000 $0.05	Buy Now
	BZX384B75-HE3-08	Reel	21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.04196	Buy Now
Vishay Semiconductors BZX84B75-E3-08 DIODE ZENER 75V 300MW SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BZX84B75-E3-08	Cut Tape	15,188		1	1 $0.14 10 $0.097 100 $0.14 1000 $0.043 10000 $0.043	Buy Now
	BZX84B75-E3-08	Digi-Reel	15,188		1	1 $0.14 10 $0.097 100 $0.14 1000 $0.043 10000 $0.043	Buy Now
	BZX84B75-E3-08	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.03709	Buy Now
Vishay Semiconductors BZX384B75-G3-08 DIODE ZENER 75V 200MW SOD323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BZX384B75-G3-08	Digi-Reel	14,950		1	1 $0.18 10 $0.123 100 $0.18 1000 $0.057 10000 $0.057	Buy Now
	BZX384B75-G3-08	Cut Tape	14,950		1	1 $0.18 10 $0.123 100 $0.18 1000 $0.057 10000 $0.057	Buy Now
Nexperia BZB84-B75,215 DIODE ZENER ARRAY 75V SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BZB84-B75,215	Digi-Reel	2,999		1	1 $0.25 10 $0.149 100 $0.25 1000 $0.051 10000 $0.051	Buy Now
	BZB84-B75,215	Cut Tape	2,999		1	1 $0.25 10 $0.149 100 $0.25 1000 $0.051 10000 $0.051	Buy Now
Mouser Electronics	BZB84-B75,215		2,386			1 $0.25 10 $0.149 100 $0.06 1000 $0.051 10000 $0.024	Buy Now
Rochester Electronics	BZB84-B75,215		65,900		1	1 $0.0246 10 $0.0246 100 $0.0231 1000 $0.0209 10000 $0.0209	Buy Now
TME	BZB84-B75,215				15	1 - 10 - 100 $0.0472 1000 $0.0374 10000 $0.0349	Get Quote
Avnet Silica	BZB84-B75,215			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip One Stop	BZB84-B75,215	Cut Tape	910			1 - 10 - 100 $0.0241 1000 $0.021 10000 $0.021	Buy Now
EBV Elektronik	BZB84-B75,215			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia BZX84-B75,215 DIODE ZENER 75V 250MW TO236AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BZX84-B75,215	Digi-Reel	753		1	1 $0.12 10 $0.081 100 $0.12 1000 $0.036 10000 $0.036	Buy Now
	BZX84-B75,215	Cut Tape	753		1	1 $0.12 10 $0.081 100 $0.12 1000 $0.036 10000 $0.036	Buy Now
Mouser Electronics	BZX84-B75,215		750			1 $0.12 10 $0.072 100 $0.038 1000 $0.022 10000 $0.014	Buy Now
Newark	BZX84-B75,215	Cut Tape	2,630		5	1 $0.2 10 $0.141 100 $0.063 1000 $0.035 10000 $0.035	Buy Now
Rochester Electronics	BZX84-B75,215		83,900		1	1 $0.0219 10 $0.0219 100 $0.0206 1000 $0.0186 10000 $0.0186	Buy Now
TME	BZX84-B75,215		4,910		20	1 - 10 - 100 $0.0181 1000 $0.0145 10000 $0.0136	Buy Now

Avnet Silica	BZX84-B75,215			10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	BZX84-B75,215		21,000	10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BZX84-B75,215		45,000		1	1 - 10 - 100 - 1000 - 10000 $0.018	Buy Now

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4B75 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
m4512 Abstract: HYM59256AM Text: HYUNDAI 3TE ELECTRONI CS » m 4b750flö Ü0 0 Q3 7 Ô T •HYNK 256KX 9-Bit CMOS DRAM MODULE M451201A-APR9T DESCRIPTION FEATURES The HYM59256A is a 256K words by 9bits dynamic RAM m odule and consists o f Fast Page mode CM OS DRAMs of two HY534256J in 20/26 pin SOJ and one HY53C256LF in 18	OCR Scan	4b750flö 256KX M451201A-APR9T HYM59256A HY534256J HY53C256LF 22\sF HYM59256AM HYM59256AP HYM59256A-70 m4512	PDF
M2312 Abstract: M231202B-MAY92 hyundai HY62C256 Text: H Y U N D A I E L E C T R O N I C S S I E » • 4b750flfl □ □ □ 1 1 3 ci 3 7 4 ■ H Y N K HY62C256 •Hyundai SEMICONDUCTOR 32KX8-Bit CM O S SRAM M 231202B -M A Y 92 T 4 t> -Z V \3 DESCRIPTION FEATURES The HY62C256 is a high speed low power, 32,768 words by 8-bit CMOS static RAM fabri	OCR Scan	HY62C256 4b750flfl 113ci 32KX8-Bit M231202B-MAY92 PACKAGE-600Ã M2312 hyundai HY62C256	PDF
Untitled Abstract: No abstract text available Text: HY UND AI E L E C T R O N I C S SIE D 4b750flfl 0 Q 0 1 1 Ö 2 S4S » H Y N K PRELIMINARY •HYUNDAI HY234001 SEMICONDUCTOR 512KX 8-Bit C M O S MASK ROM M631200A-MAY92 DESCRIPTION FEATURES The HY234001 is mask-programmable ROM organized as 524,288 words by 8 bits. It	OCR Scan	4b750flfl HY234001 512KX M631200A-MAY92 HY234001 Speed-150/200/250 220mW 32-pin	PDF
HY62C64 Abstract: 8192X8BIT Text: H Y U N D A I E L E C T R O N I C S 03 D E \| 4b7500â Q000117 M T-46-23-12 PRELIMINARY N f SEMICONDUCTOR NOVEM BER 1986 DESCRIPTION FEATURES The HYUNDAI HY62C64 is a 65, 536-bit static random access memory organized as 8192 words by 8 bits and operates from a single 5 volt supply It is built	OCR Scan	Q000117 T-46-23-12 HY62C64 536-bit 28-pin, HY62C64/L-45 HY62C64/L-55 HY62C64/L-70 HY62C64/L 8192X8BIT	PDF
4b23 Abstract: HY51C256 hyundai 235 moo 42j Text: HYUNDAI ELECT RO NI CS Û3 Ü>ËJ 4b750ññ ODDQISI *4 \| ~ 467 508 8 HYUNDAI ELEC TR ON ICS 83D 00151 D T-M cr23>-\|5 O C TO B ER 1986 D ESC R IPTIO N , The HY51C256L offers a typical standby current as low as 10// A w hen RAS Vdd—0.2V. During stand by (i.e. only refresh cycles the refresh period can	OCR Scan	4b750Ã HY51C256/L 144x1-bit HY51C256X 100ns 120ns 150ns 200ns 300MIL 4b23 HY51C256 hyundai 235 moo 42j	PDF
HY514100-80 Abstract: ascl2 Text: HYUNDAI ELECTRONICS BTE D • 4b75DÖÖ DDDG311 S BIHYNK PRELIMINARY ^ 4M X 1-Bit CMOS DRAM? M191200A-MAY91 -r -H ê -1 2 -ïS DESCRIPTION FEATURES • Low power dissipation - Operating Current, 100ns : 80mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lmA(max.)	OCR Scan	QDDG311 HY514100 M191200A-M T-H6-23-Ã 100ns HY514100. 512KX8 HY514100-80 ascl2	PDF
HY531000 Abstract: ci 7483 ic 7483 block diagram DIN 748-3 INTERNAL DIAGRAM OF IC 7483 Text: HYUNDAI ELECTRONICS SIE D •HYUNDAI • 4b750flfl OOOObll ^02 ■ HYNK H SEMICONDUCTOR Y 5 3 _ I M 1 I- H ii M ( s I IIK V M B M 171202B-JAN92 DESCRIPTION FEATURES The HY531000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac	OCR Scan	750flfl HY531000 576X1 M171202B-JAN92 0j516 ci 7483 ic 7483 block diagram DIN 748-3 INTERNAL DIAGRAM OF IC 7483	PDF
ci 28448 Abstract: No abstract text available Text: HYUNDAI ELECTRONICS SIE D • 4b750êfl DDDDbTT b?ñ « H Y N K PRELIMINARY •HYUNDAI SEMICONDUCTOR HY534256A 2' iK 4-ill I ( M( S m m i M 1C1200A-JAN92 DESCRIPTION TheHY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI	OCR Scan	HY534256A 4b75Dflfl 000b7cÃ M1C1200A-JAN92 PACKAGE-300 400MIL ci 28448	PDF
spindle and VCM motor controller Abstract: Tdk Vcm micro controller 6811 spindle and VCM motor controller 64 lead Text: SSI 32H6811/6811B Servo Motor Speed 5V Driver/DACs cé m M b n s ' A TDK Group/Company Advance Inform ation May 1994 DESCRIPTION FEATURES The SSI 32H6811/6811B Servo and MSC Drivers, a CMOS monolithic integrated circuit housed in a 64-lead TQFP package, operates from a single 5V	OCR Scan	32H6811/6811B 32H6811/6811B 64-lead 10-bit spindle and VCM motor controller Tdk Vcm micro controller 6811 spindle and VCM motor controller 64 lead	PDF
bPA20 Abstract: No abstract text available Text: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY51V17100Ais HY51V17100A HY51V17100A 1AD22-00-MAY94 4b750flfl HY51V17100AJ HY51V17100ASLJ HY51V17100AT HY51V17100ASLT bPA20	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.	OCR Scan	HYM581000A HY514400 HYM581000AM 50nYCLE 1BB03-20-MAY93 061MAX.	PDF
Untitled Abstract: No abstract text available Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY514100B HY514100B 4b750Ã 000413b 1AC09-10-MAY95 HY514100BJ HY514100BLJ	PDF
Untitled Abstract: No abstract text available Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR	PDF
Untitled Abstract: No abstract text available Text: «HYUNDAI HYM564404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5116404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01	OCR Scan	HYM564404A 64-bit HY5116404A HYM564404AKG/ATKG/ASLKG/ASLTKG DQ0-DQ63) 4b75oaa 1CE16-10-APR95	PDF

Untitled Abstract: No abstract text available Text: •HYUNDAI HYM532124A W-Series 1M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532124A is a 1M x 32-bit EDO mode CMOS DRAM module consisting of two HY5118164B in 42/42 pin S O J or 44/50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 nF decoupling capacitors are	OCR Scan	HYM532124A 32-bit HY5118164B HYM532124AW/ASLW HYM532124AWG/ASLWG HYM532124A HYM532124AT A0005	PDF
Untitled Abstract: No abstract text available Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY5117100A HY5117100A HY5117100Ato tRASI13) 1RP02) 1AD20-10-MAY94 HY51171OOA HY5117100AJ	PDF
Untitled Abstract: No abstract text available Text: HYUNDAI HY5117410 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced	OCR Scan	HY5117410 1AD06-10-APR93 HY5117410JC HY5117410UC HY5117410TC HY5117410LTC	PDF
HYM53 Abstract: No abstract text available Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each	OCR Scan	HYM536A810A 36-bit HYM536A81OA HY5117400A HYM536A81OAM/ASLM HYM536A810AMG/ASLMG HYM536A800A/ASL 1CF16-10-AUG95 HYM53	PDF
HY5116100B Abstract: No abstract text available Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ	PDF
Untitled Abstract: No abstract text available Text: HYM581600 M-Series •H Y U N D A I 16M X 8-bit CMOS ORAM MODULE DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor Is mounted for	OCR Scan	HYM581600 HY5116100 22/xF HYM581600M/LM/TM/LTM 891MAX HYM581600TM/LTM 25IMAX. 1BD01-01-FEB94	PDF
HYM536410MG Abstract: No abstract text available Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling	OCR Scan	HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG	PDF
Untitled Abstract: No abstract text available Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for	OCR Scan	HYM581600 HY5116100 HYM581600M/LM/TM/LTM HYM581600TM/LTM 1BD01-00-MAY93 HYM581600M HYM581600LM HYM581600TM	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR HY531000 Series 1Mx 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY531000 300mil 1AB04-30-APR93 HY531000S HY531000J	PDF
Untitled Abstract: No abstract text available Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.	OCR Scan	HYM581000B HY514400A 22//F HYM581000BM/BLM 1BB05-00-MAY93 4b750fifi 4b75Dflfl	PDF

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4B75 Search Results

4B75 Price and Stock

Vishay Semiconductors BZX384B75-HE3-08

Vishay Semiconductors BZX84B75-E3-08

Vishay Semiconductors BZX384B75-G3-08

Nexperia BZB84-B75,215

Nexperia BZX84-B75,215

4B75 Datasheets Context Search

m4512

M2312

Untitled

HY62C64

4b23

HY514100-80

HY531000

ci 28448

spindle and VCM motor controller

bPA20

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HYM53

HY5116100B

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HYM536410MG

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