Untitled
Abstract: No abstract text available
Text: GaAs IMPATT DIODES TM MI5001 – MI5022 Features Specified High Output Power High DC to Microwave Efficiency For Pulsed and CW Applications Applications Oscillators Avionic Systems Electronic Warfare Systems Smart Antennas Description Microsemi’s GaAs IMPATT diodes are fabricated utilizing
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MI5001
MI5022
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Untitled
Abstract: No abstract text available
Text: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :
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4L13303
04flb
4710xH
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impatt diode
Abstract: impatt diode operation IMPATT GaAs impatt diode
Text: M/A-COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION GaAs IMPATT DIODE SELECTION GUIDE PRODUCTS OPERATION Frequency Range GHz Case Style ODS # 0.5 CW IMPATTS PULSED IMPATT DIODES Minimum CW Output Power in Watts Min. Peak Pulse Power In Watts 1.0
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ODS-275
ODS-111
ODS-92
ODS-940
impatt diode
impatt diode operation
IMPATT
GaAs impatt diode
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impatt diode
Abstract: No abstract text available
Text: • SECTION MILLIMETER-WAVE DIODES Mb133□3 0 0 0 0 6 1 1 0 IMPATT Diodes and Test Fixtures HUGHES/ HICRObJAVE PRDTS 11E D. 3 Hughes 4710xH series IMPATT diodes are silicon double "J'-O"? - I drift diodes mounted in hermetically sealed packages and supplied mounted to a copper heat sink. Standard products
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Mb133â
4710xH
impatt diode
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impatt diode
Abstract: impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK
Text: IMPATT Diodes and Test Fixtures Golden contact 0.4 0.15 IMPATT Ruby box Copper Heat Sink with gold covering A • 25-155 GHz frequency range • Pulse and CW version • 20W pulse, 200 mW CW operation • Delivery from stock • Low cost A=5.6 mm, B=3.0 mm for Ka – Band
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110VAC,
220VAC,
impatt diode
impatt diode operation
impatt diode datasheet
impatt
impatt diode W band
ELVA-1
IC-02K
IC-02U
IC-015W
IM-10PK
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impatt diode
Abstract: apc-7 connector Z 0607 CW doppler radar impatt radar impatt AN-968 cw doppler impatt diode operation AN962
Text: H E W L E T T ^ PA CK ARD COMPONENTS SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 5082-0607 5082-0608 DIODES 5.9-8.4GHZ Features IMPATT AND STEP RECOVERY HIGH POWER O U TP U T Typically: 3W from 5.9 to 8.4 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IE N T OPERATIO N
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MIL-S-19500
impatt diode
apc-7 connector
Z 0607
CW doppler radar
impatt
radar impatt
AN-968
cw doppler
impatt diode operation
AN962
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IMPATT
Abstract: No abstract text available
Text: IMPATT Diodes SELECTION GUIDE MODEL NUMBER PAGE MODEL NUMBER MA46019 MA46020 MA46021 MA46022 MA46023 MA46024 MA46025 MA46026 MA46027 MA46028 MA46029 MA46030 MA46031 MA46032 MA46033 . 10-5 ! 0-5 . 10-9
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MA46019
MA46020
MA46021
MA46022
MA46023
MA46024
MA46025
MA46026
MA46027
MA46028
IMPATT
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Untitled
Abstract: No abstract text available
Text: PG0115X Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz) Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage40 I(Oper.) Typ.(A) Oper. Current Semiconductor Material Package StylePill-C Mounting StyleS
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PG0115X
Power30m
Voltage40
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Abstract: No abstract text available
Text: VAO12AN20 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power25m Frequency Min. (Hz)8G Frequency Max. (Hz)12G Efficiency Min.0.65 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current28m Semiconductor MaterialSilicon Package StylePill-C
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VAO12AN20
Power25m
Voltage90
Current28m
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Abstract: No abstract text available
Text: PGG202-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG202-83
Power200m
Voltage110
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Untitled
Abstract: No abstract text available
Text: VAO12FN20 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power400m Frequency Min. (Hz)8G Frequency Max. (Hz)12.4G Efficiency Min.6.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current85m Semiconductor MaterialSilicon Package StylePill-C
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VAO12FN20
Power400m
Voltage90
Current85m
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Untitled
Abstract: No abstract text available
Text: PGG206-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power300m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage100 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG206-83
Power300m
Voltage100
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impatt
Abstract: impatt diode MI5022 impatt diode datasheet IMPATT-Diode
Text: GaAs IMPATT DIODES TM MI5001 – MI5022 Features ● Specified High Output Power ● High DC to Microwave Efficiency ● For Pulsed and CW Applications Applications ● Oscillators ● Avionic Systems ● Electronic Warfare Systems ● Smart Antennas Description
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MI5001
MI5022
impatt
impatt diode
MI5022
impatt diode datasheet
IMPATT-Diode
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Untitled
Abstract: No abstract text available
Text: VAO12DN19 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.2 V(Oper.) Nom.(V) Oper. Voltage75 I(Oper.) Typ.(A) Oper. Current35m Semiconductor MaterialSilicon Package StylePill-C
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VAO12DN19
Power100m
Voltage75
Current35m
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Abstract: No abstract text available
Text: VAO12DN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.2 V(Oper.) Nom.(V) Oper. Voltage75 I(Oper.) Typ.(A) Oper. Current35m Semiconductor MaterialSilicon Package StylePill-C
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VAO12DN21
Power100m
Voltage75
Current35m
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Untitled
Abstract: No abstract text available
Text: 5082-0437 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)5.0G Frequency Max. (Hz)9.0G Efficiency Min.3.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StylePill-C
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Power100m
Voltage110
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Untitled
Abstract: No abstract text available
Text: ML4804 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power1.3 Frequency Min. (Hz)8.0G Frequency Max. (Hz)10G Efficiency Min.6.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT
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Voltage110
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Untitled
Abstract: No abstract text available
Text: VAO12EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-B
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VAO12EN22
Power200m
Voltage80
Current45m
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Untitled
Abstract: No abstract text available
Text: MA4989 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power50m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18.0G Efficiency Min.2.0 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT
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MA4989
Power50m
Voltage60
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Abstract: No abstract text available
Text: VAO12CN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power50m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.3.0 V(Oper.) Nom.(V) Oper. Voltage70 I(Oper.) Typ.(A) Oper. Current25m Semiconductor MaterialSilicon Package StylePill-B
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VAO12CN22
Power50m
Voltage70
Current25m
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Untitled
Abstract: No abstract text available
Text: ND9S12-1N Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power2.5 Frequency Min. (Hz)13G Frequency Max. (Hz) Efficiency Min.20 V(Oper.) Nom.(V) Oper. Voltage50 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT
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ND9S12-1N
Voltage50
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Abstract: No abstract text available
Text: MA4988 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power10m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18.0G Efficiency Min.1.0 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT
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MA4988
Power10m
Voltage60
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PDF
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Untitled
Abstract: No abstract text available
Text: RT8081 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power1.0 Frequency Min. (Hz)8.0G Frequency Max. (Hz) Efficiency Min.18 V(Oper.) Nom.(V) Oper. Voltage55 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePin Mounting StyleS
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RT8081
Voltage55
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Untitled
Abstract: No abstract text available
Text: MS856B Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)15G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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MS856B
Power200m
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