Untitled
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7927 Features • Rise Times Less Than 100ps • Direct Access to Modulation and Bias FET’s • High Speed Operation Up to 2.5 Gb/s NRZ Data • Data Density Monitors
|
Original
|
VSC7927
100ps
VSC7927
G52201-0,
|
PDF
|
CLK5010
Abstract: fet 741 VSC7925
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Datasheet SDH/SONET 2.5Gb/s Laser Diode Driver VSC7925 Features • Rise Times Less Than 100ps • Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s
|
Original
|
VSC7925
100ps
VSC7925
G52157-0,
CLK5010
fet 741
|
PDF
|
fet 741
Abstract: VSC7924
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7924 Features • Rise Times Less Than 100ps • Single Power Supply • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s
|
Original
|
VSC7924
100ps
VSC7924
G52156-0,
fet 741
|
PDF
|
VSC7923
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5 Gb/s Laser Diode Driver VSC7923 Features • Rise Times Less Than 100ps • Single Power Supply • High Speed Operation Up to 2.4 Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s
|
Original
|
VSC7923
100ps
VSC7923
G52156-0,
|
PDF
|
MIP 291
Abstract: VSC7926
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gbits/sec Laser Diode Driver VSC7926 Features • Rise Times Less Than 100ps • Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s
|
Original
|
VSC7926
100ps
VSC7926
G52188-0,
MIP 291
|
PDF
|
C358C
Abstract: VSC7927
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7927 SONET/SDH 2.5Gb/s Laser Diode Driver Features • Rise Times of Less Than 100ps • Direct Access to Modulation and Bias FETs • High Speed Operation Up to 2.5 Gb/s NRZ Data • Data Density Monitors
|
Original
|
VSC7927
100ps
VSC7927
G52201-0,
C358C
|
PDF
|
VSC7926
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7926 SDH/SONET 2.5Gb/s Laser Diode Driver Features • Rise Times of Less Than 100ps • Single Supply • High-Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FETs
|
Original
|
VSC7926
100ps
VSC7926
G52188-0,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7989 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 38ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs
|
Original
|
VSC7989
VSC7989
G52356-0,
|
PDF
|
IC TL 0841
Abstract: tl 0841 KE4393 LM4110 lm 741 op amp LM 741 op amp single supply LM349N p1087e LM348J "Op Amp" lm 741
Text: NATL SEMICOND LINEAR hS01124 0DbflH33 fi SEE D t w o s -w S e m ic o n d u c to r LM148/LM149 Series Quad 741 Op Amp LM148/LM248/LM348 Quad 741 Op Amps LM149/LM249/LM349 Wide Band Decompensated (Av (m in ) = 5) General Description Features The LM148 series is a ttue quad 741. It consists of four
|
OCR Scan
|
0Gbfl333
LM148/LM149
LM148/LM248/LM348
LM149/LM249/LM349
LM148
AlsL/H/7788-20
00bfi3M4
t-79-05-40
LM148J,
IC TL 0841
tl 0841
KE4393
LM4110
lm 741 op amp
LM 741 op amp single supply
LM349N
p1087e
LM348J
"Op Amp" lm 741
|
PDF
|
IL 741
Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
Text: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In
|
OCR Scan
|
711Dfl5t,
BUK441-100A/B
BUK441
-100A
-100B
-SOT186
IL 741
philips lps 100
BUK441-100A
BUK441-100B
P101
|
PDF
|
philips lps 100
Abstract: BUK441 BUK441-100A BUK441-100B P101
Text: PHILIPS INTERN ATI ONAL fc.SE D H 7110fl5t> 0Qfa3*m 741 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In
|
OCR Scan
|
711002b
BUK441-100A/B
-SOT186
BUK441
-100A
-100B
711DASfc.
philips lps 100
BUK441-100A
BUK441-100B
P101
|
PDF
|
transistor BD6
Abstract: bd645 transistor BD643 H 649 A transistor
Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching
|
OCR Scan
|
BD643;
BD645;
BD647;
BD649;
BD651
7110fi2b
BD644,
BD646,
BD648,
BD650
transistor BD6
bd645 transistor
BD643
H 649 A transistor
|
PDF
|
lg bd645
Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647
Text: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching
|
OCR Scan
|
BD643;
BD645;
BD647;
BD649;
BD651
7110fl2b
T0-220
BD644,
BD646,
BD648,
lg bd645
darlington bd 645
BD649 philips
bd649 PNP transistor
BD649
B0645
BD645
BD643
BD646
BD647
|
PDF
|
pin diagram for
Abstract: No abstract text available
Text: Preliminary Datasheet VSC7925 sdh/s o n e t 2.5Gb/s Laser Diode Driver Features • Rise Times Less Than lOOps • High Speed Operation Up to 2.5Gb/s NRZ Data • Single-ended Inputs Single Supply Direct Access to Modulation and Bias FET’s Data Density Monitors
|
OCR Scan
|
VSC7925
VSC7925
G52157-0,
pin diagram for
|
PDF
|
|
facon diode
Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl
Text: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg
|
OCR Scan
|
345b2D3
T-23-0\
cb-200
741j37
cb-236
facon diode
40931
thyristor N 600 ch 14
CA 40931
ci 741
facon
741J
741 AMP
37741
1001dl
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advance Product Information SDH/SONET 2.5 Gb/s Laser Diode Driver VSC7923 Features • Rise Times Less Than lOOps • Single Power Supply • High Speed Operation * Direct Access to Modulation and Bias FET’s Up to 2.4 Gb/s NRZ Data . Data Density Monitors
|
OCR Scan
|
VSC7923
VSC7923
G52156-0,
|
PDF
|
pin diagram of ic 741
Abstract: 741 ic metal package
Text: SEMICONDUCTOR CORPORATION Preliminary Datasheet s d h /s o n e t VSC7925 z.sGb/s Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FET’s • Single-ended Inputs
|
OCR Scan
|
VSC7925
VSC7925
G52157-0,
pin diagram of ic 741
741 ic metal package
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advance Product Information s d h / s o n e t z.sGb/s VSC7924 Laser Diode Driver Features • Rise Times Less Than lOOps • Single Power Supply • High Speed Operation * Direct Access to Modulation and Bias FET ’s Up to 2.5Gb/s NRZ Data . Data Density Monitors
|
OCR Scan
|
VSC7924
VSC7924
622Mbduct
G52156-0,
|
PDF
|
125C42
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h /s o n e t VSC7924 z.sGb/s Laser Diode Driver Features • Rise Times Less Than lOOps • High Speed Operation Up to 2.5Gb/s NRZ Data • Single Power Supply * Direct Access to Modulation and Bias FET’s
|
OCR Scan
|
VSC7924
VSC7924
G52156-0,
125C42
|
PDF
|
125C42
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h / s o n e t 2.5Gbits/sec VSC7926 Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FET’s
|
OCR Scan
|
VSC7926
VSC7926
G52188-0,
125C42
|
PDF
|
TL2322
Abstract: No abstract text available
Text: Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7927 Features • Rise Times Less Than lOOps Direct Access to Modulation and Bias FET’s • High Speed Operation Up to 2.5 Gb/s NRZ Data Data Density Monitors • Differential or Single-Ended Inputs
|
OCR Scan
|
VSC7927
VSC7927
G52201-0,
TL2322
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advance Product Information s d h / s o n e t 2.5Gbits/sec VSC7926 Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FE T’s • Differential Inputs
|
OCR Scan
|
VSC7926
VSC7926
G52188-0,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h /s o n e t VSC7927 z.sGb/s Laser Diode Driver Features • Rise Times Less Than lOOps • High Speed Operation Up to 2.5 Gb/s NRZ Data • Differential or Single-Ended Inputs • Single Supply • ECL Compatible Clock and Data Inputs
|
OCR Scan
|
VSC7927
VSC7927
G52201
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR CORPORATION Advanced Product Information SDH/SONET2.4 Gb/s Laser Diode Driver VSC7925 Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.4 Gb/s NRZ Data Direct Access to Modulation and Bias FET’s Data Density Monitors
|
OCR Scan
|
VSC7925
VSC7925
G52157-0,
|
PDF
|