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    IN 741 DIODE Search Results

    IN 741 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    IN 741 DIODE Price and Stock

    Microchip Technology Inc MPLAD30KP100CA

    TVS Diode - Bi-Dir - 100V Reverse Standoff (Typ) - 111V Breakdown (Min) - 162V Clamping (Max)@Ipp - 186A - 30kW - PLAD Package.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MPLAD30KP100CA
    • 1 -
    • 10 -
    • 100 $33.34
    • 1000 $33.34
    • 10000 $33.34
    Buy Now
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5938BUR-1/TR
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.13
    • 10000 $3.04
    Buy Now

    IN 741 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7927 Features • Rise Times Less Than 100ps • Direct Access to Modulation and Bias FET’s • High Speed Operation Up to 2.5 Gb/s NRZ Data • Data Density Monitors


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    VSC7927 100ps VSC7927 G52201-0, PDF

    CLK5010

    Abstract: fet 741 VSC7925
    Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Datasheet SDH/SONET 2.5Gb/s Laser Diode Driver VSC7925 Features • Rise Times Less Than 100ps • Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s


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    VSC7925 100ps VSC7925 G52157-0, CLK5010 fet 741 PDF

    fet 741

    Abstract: VSC7924
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7924 Features • Rise Times Less Than 100ps • Single Power Supply • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s


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    VSC7924 100ps VSC7924 G52156-0, fet 741 PDF

    VSC7923

    Abstract: No abstract text available
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5 Gb/s Laser Diode Driver VSC7923 Features • Rise Times Less Than 100ps • Single Power Supply • High Speed Operation Up to 2.4 Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s


    Original
    VSC7923 100ps VSC7923 G52156-0, PDF

    MIP 291

    Abstract: VSC7926
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gbits/sec Laser Diode Driver VSC7926 Features • Rise Times Less Than 100ps • Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s


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    VSC7926 100ps VSC7926 G52188-0, MIP 291 PDF

    C358C

    Abstract: VSC7927
    Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7927 SONET/SDH 2.5Gb/s Laser Diode Driver Features • Rise Times of Less Than 100ps • Direct Access to Modulation and Bias FETs • High Speed Operation Up to 2.5 Gb/s NRZ Data • Data Density Monitors


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    VSC7927 100ps VSC7927 G52201-0, C358C PDF

    VSC7926

    Abstract: No abstract text available
    Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7926 SDH/SONET 2.5Gb/s Laser Diode Driver Features • Rise Times of Less Than 100ps • Single Supply • High-Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FETs


    Original
    VSC7926 100ps VSC7926 G52188-0, PDF

    Untitled

    Abstract: No abstract text available
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7989 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Features • Rise Times Less Than 38ps • Single-Supply • High-Speed Operation Up to 10.7Gb/s NRZ Data • CML-Compatible Data Inputs


    Original
    VSC7989 VSC7989 G52356-0, PDF

    IC TL 0841

    Abstract: tl 0841 KE4393 LM4110 lm 741 op amp LM 741 op amp single supply LM349N p1087e LM348J "Op Amp" lm 741
    Text: NATL SEMICOND LINEAR hS01124 0DbflH33 fi SEE D t w o s -w S e m ic o n d u c to r LM148/LM149 Series Quad 741 Op Amp LM148/LM248/LM348 Quad 741 Op Amps LM149/LM249/LM349 Wide Band Decompensated (Av (m in ) = 5) General Description Features The LM148 series is a ttue quad 741. It consists of four


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    0Gbfl333 LM148/LM149 LM148/LM248/LM348 LM149/LM249/LM349 LM148 AlsL/H/7788-20 00bfi3M4 t-79-05-40 LM148J, IC TL 0841 tl 0841 KE4393 LM4110 lm 741 op amp LM 741 op amp single supply LM349N p1087e LM348J "Op Amp" lm 741 PDF

    IL 741

    Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
    Text: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In


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    711Dfl5t, BUK441-100A/B BUK441 -100A -100B -SOT186 IL 741 philips lps 100 BUK441-100A BUK441-100B P101 PDF

    philips lps 100

    Abstract: BUK441 BUK441-100A BUK441-100B P101
    Text: PHILIPS INTERN ATI ONAL fc.SE D H 7110fl5t> 0Qfa3*m 741 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In


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    711002b BUK441-100A/B -SOT186 BUK441 -100A -100B 711DASfc. philips lps 100 BUK441-100A BUK441-100B P101 PDF

    transistor BD6

    Abstract: bd645 transistor BD643 H 649 A transistor
    Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


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    BD643; BD645; BD647; BD649; BD651 7110fi2b BD644, BD646, BD648, BD650 transistor BD6 bd645 transistor BD643 H 649 A transistor PDF

    lg bd645

    Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647
    Text: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


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    BD643; BD645; BD647; BD649; BD651 7110fl2b T0-220 BD644, BD646, BD648, lg bd645 darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647 PDF

    pin diagram for

    Abstract: No abstract text available
    Text: Preliminary Datasheet VSC7925 sdh/s o n e t 2.5Gb/s Laser Diode Driver Features • Rise Times Less Than lOOps • High Speed Operation Up to 2.5Gb/s NRZ Data • Single-ended Inputs Single Supply Direct Access to Modulation and Bias FET’s Data Density Monitors


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    VSC7925 VSC7925 G52157-0, pin diagram for PDF

    facon diode

    Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl
    Text: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg


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    345b2D3 T-23-0\ cb-200 741j37 cb-236 facon diode 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information SDH/SONET 2.5 Gb/s Laser Diode Driver VSC7923 Features • Rise Times Less Than lOOps • Single Power Supply • High Speed Operation * Direct Access to Modulation and Bias FET’s Up to 2.4 Gb/s NRZ Data . Data Density Monitors


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    VSC7923 VSC7923 G52156-0, PDF

    pin diagram of ic 741

    Abstract: 741 ic metal package
    Text: SEMICONDUCTOR CORPORATION Preliminary Datasheet s d h /s o n e t VSC7925 z.sGb/s Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FET’s • Single-ended Inputs


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    VSC7925 VSC7925 G52157-0, pin diagram of ic 741 741 ic metal package PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information s d h / s o n e t z.sGb/s VSC7924 Laser Diode Driver Features • Rise Times Less Than lOOps • Single Power Supply • High Speed Operation * Direct Access to Modulation and Bias FET ’s Up to 2.5Gb/s NRZ Data . Data Density Monitors


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    VSC7924 VSC7924 622Mbduct G52156-0, PDF

    125C42

    Abstract: No abstract text available
    Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h /s o n e t VSC7924 z.sGb/s Laser Diode Driver Features • Rise Times Less Than lOOps • High Speed Operation Up to 2.5Gb/s NRZ Data • Single Power Supply * Direct Access to Modulation and Bias FET’s


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    VSC7924 VSC7924 G52156-0, 125C42 PDF

    125C42

    Abstract: No abstract text available
    Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h / s o n e t 2.5Gbits/sec VSC7926 Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FET’s


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    VSC7926 VSC7926 G52188-0, 125C42 PDF

    TL2322

    Abstract: No abstract text available
    Text: Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7927 Features • Rise Times Less Than lOOps Direct Access to Modulation and Bias FET’s • High Speed Operation Up to 2.5 Gb/s NRZ Data Data Density Monitors • Differential or Single-Ended Inputs


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    VSC7927 VSC7927 G52201-0, TL2322 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information s d h / s o n e t 2.5Gbits/sec VSC7926 Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FE T’s • Differential Inputs


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    VSC7926 VSC7926 G52188-0, PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h /s o n e t VSC7927 z.sGb/s Laser Diode Driver Features • Rise Times Less Than lOOps • High Speed Operation Up to 2.5 Gb/s NRZ Data • Differential or Single-Ended Inputs • Single Supply • ECL Compatible Clock and Data Inputs


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    VSC7927 VSC7927 G52201 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR CORPORATION Advanced Product Information SDH/SONET2.4 Gb/s Laser Diode Driver VSC7925 Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.4 Gb/s NRZ Data Direct Access to Modulation and Bias FET’s Data Density Monitors


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    VSC7925 VSC7925 G52157-0, PDF