IN24LC04B
Abstract: IN24LC08B 4X256X8
Text: TECHNICAL DATA IN24LC04B/08B 4K/8K 2.5V CMOS Serial EEPROMs DESCRIPTION IN24LC04B/08B is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and
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IN24LC04B/08B
IN24LC04B/08B
012AA)
IN24LC04B
IN24LC08B
4X256X8
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IN24LC02B
Abstract: 24C01A 24C02A 24LC01 24LC02 24LC02B
Text: TECHNICAL DATA 2K 2.5V CMOS Serial EEPROM IN24LC02B DESCRIPTION IN24LC02B is a 2K-bit Electrically Erasable PROM. The device is organized as a single block of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and active
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IN24LC02B
IN24LC02B
IN24LC02B.
1980x1650
100x100mkm
24C01A
24C02A
24LC01
24LC02
24LC02B
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IL311ANM
Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.
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IN24LC04
Abstract: IN24LC08 4x256x8
Text: TECHNICAL DATA IN24LC04/08 4K/8K 2.5V CMOS Serial EEPROMs DESCRIPTION IN24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and
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IN24LC04/08
IN24LC04/08
IN24LC04B/08B
012AA)
IN24LC04
IN24LC08
4x256x8
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