IN6370
Abstract: IN6360 1N6356 1N6372 MPT-10 MPT-12 MPT-45C
Text: P l ICRO SE f ll S 'iE CORP D T i i s a b s 0 0 0 2 0 4 ? T2M • nsc I Microsemi Corp. ¡ ,O0Cc f The I ■S.-U/.1 .1 v-l. C 1 w im SCOTISPAU. 1/ ■or more information call: (602) 941-6300 FEATURES • DESIGNED TO PROTECT BIPOLAR AND MOS MICROPROCESSOR BASED SYSTEM S.
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00Q2047
IN6370
IN6360
1N6356
1N6372
MPT-10
MPT-12
MPT-45C
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pt36c
Abstract: pt8c a2602 1N6372
Text: Microsemi Corp. ' The diode experts SANTA ANA, CA SCOTTSDALE, A 2 For more information call: 602 941-6300 FEATURES • DESIGNED TO PR O TEC T BIPO LAR AN D M OS M ICROPROCESSOR BASED S Y S T E M S . 1N6356 thru 1N6372 and MPT-5 thru MPT-45C TRANSIENT ABSORPTION ZENER
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1N6356
1N6372
MPT-45C
10-12seconds
pt36c
pt8c
a2602
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1N6372
Abstract: IN635 IN6360 IN6359 1N6356 MPT-10 MPT-45C transient absorption zener MPT36 IN6363
Text: / Micro/semi Corp. f 7hp ihodp pxperis SCOTTSDALE , A Z SANTA ANA, CA F o r m o re in fo rm a tio n call: 60 2 941-6300 FEA TU RES • DESIGNED TO PROTECT BIPOLAR ANO M OS MICROPROCESSOR BASED SY ST EM S. 1N6356 1N6372 and MPT-5 thru MPT-45C TRANSIENT
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1N6356
1N6372
MPT-45C
1N6356-1N6364)
IN635
IN6360
IN6359
MPT-10
MPT-45C
transient absorption zener
MPT36
IN6363
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