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    INFINEON TO-220 DATE CODE MARKING Search Results

    INFINEON TO-220 DATE CODE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    INFINEON TO-220 DATE CODE MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343


    Original     		BAS28. BAS28/W BAS28 BAS28W OT143 OT343 PDF

    marking CODE JTS

    Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420
    Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343


    Original     		BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, marking CODE JTS BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420 PDF

    BAS28

    Abstract: No abstract text available
    Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes BAS28/W " ! ,  ,  Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original     		BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W, BAS28W PDF

    mosfet marking code gg

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		BF2040. BF2040 BF2040R BF2040W OT143 OT143R OT343 BF2040, BF2040W mosfet marking code gg PDF

    BAR66

    Abstract: No abstract text available
    Text: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 Configuration series LS nH Marking 1.8 PMs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original     		BAR66. BAR66 BAR66 PDF

    BF2040W

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		BF2040. BF2040 OT143 BF2040R BF2040W OT343 BF2040W PDF

    marking CODE JTS

    Abstract: BAS28
    Text: BAS28. Silicon Switching Diode  For high-speed switching applications  Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original     		BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W, marking CODE JTS PDF

    BAS28

    Abstract: No abstract text available
    Text: BAS28. Silicon Switching Diode  For high-speed switching applications  Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original     		BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W, PDF

    e2 marking

    Abstract: MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls
    Text: BCV62 PNP Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration


    Original     		BCV62 VPS05178 EHA00013 BCV62A OT143 BCV62B BCV62C e2 marking MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls PDF

    transistor marking T2

    Abstract: No abstract text available
    Text: BCV62 PNP Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration


    Original     		BCV62 VPS05178 EHA00013 BCV62A BCV62B BCV62C OT143 OT143 transistor marking T2 PDF

    2I k

    Abstract: No abstract text available
    Text: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection • Pb-free RoHS compliant package BAR66 ! ,  ,  Type BAR66 Package SOT23 Configuration series LS(nH) 1.8 Marking PMs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original     		BAR66. BAR66 2I k PDF

    E6327

    Abstract: DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		BF2040. BF2040 OT143 BF2040R BF2040W OT343 E6327 DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143 PDF

    BAT54

    Abstract: bat54-04w BAT54-02LRH BAT54-02V BAT54-04 BAT54-05 BAT54-05W BAT54-06 BAT54-06W BAT54W
    Text: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage BAT54-02LRH BAT54-02V BAT54 BAT54W BAT54-04 BAT54-04W 3 1 3 2 1 Type BAT54 BAT54-02LRH*


    Original     		BAT54. BAT54-02LRH BAT54-02V BAT54 BAT54W BAT54-04 BAT54-04W OT323 OD323 BAT54 bat54-04w BAT54-02LRH BAT54-02V BAT54-04 BAT54-05 BAT54-05W BAT54-06 BAT54-06W BAT54W PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT54-02LRH


    Original     		BAT54. BAT54-02LRH BAT54-02V BAT54 BAT54W BAT54-04 BAT54-04W BAT54-02LRH* PDF

    BCR108W

    Abstract: BF799W
    Text: BF799W NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 3 • SAW filter driver in TV tuners 2 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Type BF799W Marking LKs 1=B Pin Configuration 2=E


    Original     		BF799W OT323 BCR108W BF799W PDF

    bat54

    Abstract: c125t-a BAT54 SOT323 datasheet bat54 BAT54 SOT23 BAT54-04 BAT54 datasheet DIODE MARKING CODE LAYOUT G SOT23 TSLP-2-7 BAT54-02LRH
    Text: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT54-02LRH


    Original     		BAT54. BAT54-02LRH BAT54-02V BAT54-03W BAT54 BAT54W BAT54-04 BAT54-04W bat54 c125t-a BAT54 SOT323 datasheet bat54 BAT54 SOT23 BAT54-04 BAT54 datasheet DIODE MARKING CODE LAYOUT G SOT23 TSLP-2-7 BAT54-02LRH PDF

    BAT54

    Abstract: No abstract text available
    Text: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT54-02LRH


    Original     		BAT54. BAT54-02LRH BAT54-02V BAT54-03W BAT54 BAT54W BAT54-04 BAT54-04W BAT54-05 BAT54-05W PDF

    BAT54

    Abstract: MARKING CODE 140
    Text: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAT54-02LRH


    Original     		BAT54. Q1011) BAT54-02LRH BAT54-02V BAT54-03W BAT54 BAT54W BAT54-04 BAT54-04W BAT54 MARKING CODE 140 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF799W NPN Silicon RF Transistor • For linear broadband amplifier application up to 500 MHz 3 • SAW filter driver in TV tuners 2 1 • Pb-free RoHS compliant package Type Marking BF799W LKs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings


    Original     		BF799W OT323 PDF

    BAT54 SOT323

    Abstract: BAT54 BAT54-02LRH BAT54 application
    Text: BAT54. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAT54-02LRH


    Original     		BAT54. Q1011) BAT54-02LRH BAT54-02V BAT54-03W BAT54 BAT54W BAT54-04 BAT54-04W BAT54-05 BAT54 SOT323 BAT54 application PDF

    marking 1ks

    Abstract: BCV61
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		BCV61 VPS05178 EHA00012 BCV61A BCV61B BCV61C OT143 OT143 marking 1ks BCV61 PDF

    TSFP-3

    Abstract: marking code 10 sot23 BCR108T BCR196 BCR196F BCR196L3 BCR196T BCR196W SC75
    Text: BCR196. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ , R2 = 22kΩ BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR196 WXs 1=B


    Original     		BCR196. BCR196/F/L3 BCR196T/W EHA07183 BCR196 BCR196F BCR196L3 BCR196T BCR196W OT323 TSFP-3 marking code 10 sot23 BCR108T BCR196 BCR196F BCR196L3 BCR196T BCR196W SC75 PDF

    WL sot23

    Abstract: marking code 10 sot23 BCR108T BCR146 BCR146F BCR146L3 BCR146T BCR146W SC75
    Text: BCR146. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47kΩ, R2 =22kΩ BCR146/F/L3 BCR146T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR146 WLs 1=B 2=E


    Original     		BCR146. BCR146/F/L3 BCR146T/W EHA07184 BCR146 BCR146F BCR146L3 BCR146T BCR146W OT323 WL sot23 marking code 10 sot23 BCR108T BCR146 BCR146F BCR146L3 BCR146T BCR146W SC75 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration


    Original     		SMBT2907A/MMBT2907A SMBT2222A/ MMBT2222A VPS05161 SMBT2907A/MMBT2907A PDF