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    INFRARED DIODE Search Results

    INFRARED DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    INFRARED DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    780nm-5mW

    Abstract: 780nm laser diode module 780nm laser diode 8 mW Infrared diode Laser Diode 4 pin DIODE infrared laser diode laser diode 12 pin laser diode 780 nm diode laser
    Text: US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Barrel Specs:


    Original     		780nm-5mW N780-5 NM780-5 MM780-5 com/mmn780nm5m 780nm laser diode module 780nm laser diode 8 mW Infrared diode Laser Diode 4 pin DIODE infrared laser diode laser diode 12 pin laser diode 780 nm diode laser PDF

    Laser module

    Abstract: infrared Laser diode Laser Diode 4 pin 808nm-5mW 10 pin laser diode laser diode symbols IR-Laser-Diode 808nm Laser-Diode 808 NM808-5 laser diode 12 pin
    Text: US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diode


    Original     		808nm-5mW N808-5 NM808-5 MM808-5 MM808nm com/mmd808nm5m Laser module infrared Laser diode Laser Diode 4 pin 10 pin laser diode laser diode symbols IR-Laser-Diode 808nm Laser-Diode 808 NM808-5 laser diode 12 pin PDF

    850nm 5mw laser diode

    Abstract: Laser Diode 10 pin diode laser diode 10 pin laser diode Laser Diode 4 pin 10 35 DIODE laser diode 12 pin laser diode symbols Laser module
    Text: US-Lasers: 850nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 850nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Barrel Specs:


    Original     		850nm-5mW MM850-5 com/mmn850nm5m 850nm 5mw laser diode Laser Diode 10 pin diode laser diode 10 pin laser diode Laser Diode 4 pin 10 35 DIODE laser diode 12 pin laser diode symbols Laser module PDF

    GaAs 850 nm Infrared Emitting Diode

    Abstract: TLN217
    Text: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.


    Original     		TLN217 TLN217 GaAs 850 nm Infrared Emitting Diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Emitter Specifications F5G1 Infrared Emitter Gallium Aluminum Arsenide Infrared Emitting Diode T he F5G1 is a Gallium-Aluminum-Arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength of 880 nanometers. This device will provide a significant increase in


    OCR Scan     		PDF

    infrared laser diode

    Abstract: Laser-Diode 808 808nm laser diode Laser Diode 808 nm 808nm-5mW 808nm
    Text: US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE


    Original     		808nm-5mW 808nm com/n808nm5m infrared laser diode Laser-Diode 808 808nm laser diode Laser Diode 808 nm 808nm PDF

    TLN217

    Abstract: No abstract text available
    Text: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.


    Original     		TLN217 TLN217 PDF

    IR224

    Abstract: IR333 IR333C SIR333 SIR333C UIR224C UIR333C IR224C infrared
    Text: INFRARED EMITTING DIODE IR333 IR224 Wave At 20mA Emitter Part No. Material Lens Type Color Length Vf V (mW/Sr) λp(nm) Typ. Typ. View Angle (deg) IR224 - Infrared Blue Transparent 940 1.3 8 30 IR224C - Infrared Water Clear 940 1.3 8 30 SIR224 - Infrared


    Original     		IR333 IR224 IR224C SIR224 SIR224C UIR224C IR333C SIR333 IR224 IR333 IR333C SIR333 SIR333C UIR224C UIR333C IR224C infrared PDF

    laser diode 780 nm

    Abstract: 780nm-5mW "Photo Diode" 780nm 5MW infrared laser diodes 780nm laser diode 8 mW 780NM Laser-Diode laser diode style a 780nm laser diode US-Lasers
    Text: US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-5mW - Infrared Laser Diodes Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA z Index Guided MQW Structure


    Original     		780nm-5mW 780nm com/n780nm5m laser diode 780 nm "Photo Diode" 780nm 5MW infrared laser diodes 780nm laser diode 8 mW 780NM Laser-Diode laser diode style a 780nm laser diode US-Lasers PDF

    OSI photo detector

    Abstract: 1N6266
    Text: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940


    OCR Scan     		1N6266 1N6266 L14G1. OSI photo detector PDF

    Untitled

    Abstract: No abstract text available
    Text: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure


    Original     		904nm-5mW 904nm com/n904nm5m PDF

    Untitled

    Abstract: No abstract text available
    Text: Invisible optoelectronics device Infrared Diode Photo Diode Photo Transistor High power Infrared diode Formore,pleasevisithttp://www.betlux.com Infrared Emitters Part Number Φe （Mw Material BL-LS3528A0S1IRAC BL-LS3528A0S1IRAB BL-LS3528A0S1IRBC BL-LS3528A0S1IRBB


    Original     		BL-LS3528A0S1IRAC BL-LS3528A0S1IRAB BL-LS3528A0S1IRBC BL-LS3528A0S1IRBB BL-LS3528A0S1IRCC BL-LS3528A0S1IRCB BL-LS3528A0S1IRCY BL-LS3528A0S1 BL-LS3528B1S3 BL-LS3528B1S3IRAC PDF

    780nm 5MW infrared laser

    Abstract: 780nm-5mW 780nm laser diode 8 mW 780nm 5MW infrared laser diodes
    Text: US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-5mW - Infrared Laser Diodes and Infrared Diode Laser Modules Back to Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z Collect Specs: 3/8 - 56 Thread Size


    Original     		780nm-5mW 780nm com/m780nm5m 780nm 5MW infrared laser 780nm laser diode 8 mW 780nm 5MW infrared laser diodes PDF

    TLN217

    Abstract: No abstract text available
    Text: TLN217 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN217(F) Lead Free Product Infrared Light-Emitting Diode for Still Camera Unit: mm Light Source for Auto Focus The TLN217(F) is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.


    Original     		TLN217 PDF

    laser diode module 820 nm

    Abstract: 808nm laser diode 808nm
    Text: US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diodes and Infrared Diode Laser Modules Back To Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z Collect Specs: 3/8 - 56 Thread Size


    Original     		808nm-5mW 808nm com/m808nm5m laser diode module 820 nm 808nm laser diode 808nm PDF

    PHOTOTRANSISTOR 3 PIN

    Abstract: rIP 31 TRANSISTOR led phototransistor 3 pin Infrared phototransistor TO18 3 pin phototransistor IR LED infrared led Transistor AC 51 Photosensors Optoisolators "Photo Interrupter" dual transistor
    Text: OPTOELECTRONICS D e s c rip tio n TABLE OF CONTENTS Page D e s c rip tio n Page How To Use This Catalog 2 INFRARED IR COMPONENTS Part Number Index 3 How To Use The Infrared (IR) Section 31 Infrared (IR) Specification Definitions 32 Plastic Infrared Liqht Emittinq Diodes


    OCR Scan     		To-18 T-100) T-100 QTLP91X-X QTLP650X-X /QTLP670X-X PHOTOTRANSISTOR 3 PIN rIP 31 TRANSISTOR led phototransistor 3 pin Infrared phototransistor TO18 3 pin phototransistor IR LED infrared led Transistor AC 51 Photosensors Optoisolators "Photo Interrupter" dual transistor PDF

    infrared diode

    Abstract: TRANSISTOR C 2577 GL4800E0000F Infrared Emitting Diode Infrared Phototransistor infrared emitting CIRCUIT infrared infrared transistor GL527V INFRARED DIODES
    Text: Copyright 2005, Sharp Electronics Corp. All Rights Reserved. Chapter 3 – Use of Infrared Emitting Diodes 3-1 Chapter 3 – Use of Infrared Emitting Diodes 3-2 Chapter 3 – Use of Infrared Emitting Diodes 3-3 multiplied by n. Chapter 3 – Use of Infrared Emitting Diodes


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    infrared diode

    Abstract: GL1F20 IS1U20 serial vs parallel communication
    Text: GL1F20 GL1F20 Infrared Communication IrDA1.0 Compatible InfraredEmitting Diode • Features ■ Outline Dimensions 1. IrDA1.0 compatible infrared emitting diode (Transmission rate : 2.4 to 115.2kbps) (Unit : mm) 2.2 2. Built-in infrared emitting diode circuit


    Original     		GL1F20 IS1U20) GL1F20) infrared diode GL1F20 IS1U20 serial vs parallel communication PDF

    Untitled

    Abstract: No abstract text available
    Text: Emitter Specifications _ 1N6264,1N6265 Infrared Em itter G allium Arsenide Infrared Em itting D iode The 1X6264 and 1N6265 Series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy. They are ideally


    OCR Scan     		1N6264 1N6265 1X6264 1N6265 1N6264, PDF

    KDA0429

    Abstract: KP-1608F3C KP-1608SF4C
    Text: INFRARED EMITTING DIODES KP-1608F3C KP-1608SF4C Description Features ! WATER CLEAR LENS AVAILABLE. F3 Made with Gallium Arsenide Infrared Emitting ! 1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. diodes. !HIGH POWER OUTPUT. SF4 Made with Gallium Aluminum Arsenide Infrared


    Original     		KP-1608F3C KP-1608SF4C 2000PCS KDA0429 SEP/21/2001 KDA0429 KP-1608F3C KP-1608SF4C PDF

    PHOTOTRANSISTOR 3 PIN

    Abstract: 817 photo coupler DIODE m1 LED phototransistor IC PACKAGE led phototransistor 3 pin ir receiver smd diode 2 pin 3 pin phototransistor phototransistor blue light lens photodiode phototransistor phototransistor, 850nm
    Text: INFRARED SERIES PART NO. SYSTEM z INFRARED EMITTING DIODE z PHOTOTRANSISTORS z PHOTODIODE LAMP CATEGORY LED PRODUCT PACKAGE TYPE LENS APPEARANCE B - xxx - SPECIAL DEVICE SERIES IDENTIFICATION CHIP LEAD TYPE LAMP CATEGORY: CHIP: IR : Infrared Emitting Diode


    Original     		940nm 880nm 850nm PHOTOTRANSISTOR 3 PIN 817 photo coupler DIODE m1 LED phototransistor IC PACKAGE led phototransistor 3 pin ir receiver smd diode 2 pin 3 pin phototransistor phototransistor blue light lens photodiode phototransistor phototransistor, 850nm PDF

    laser diode LT

    Abstract: invisible DIN 603 din en 60825-1 infrared diode EN 60825-1
    Text: F-XXXX Infrared Diode Lasers Multi Mode diode laser with double-hetero-structure for infrared spectroscopy and general infrared applications available for following wavenumbers: 1000 – 3400 cm-1 2.94 – 10 µm continuous operation (cw) SPECIFICATIONS


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    TRANSISTOR D 880

    Abstract: H21A1 photodiode TRansistor A 940 k 30 transistor l14f1 photodiode 022 020 transistor transistor l14f1 optologic 0118 transistor L14G2 transistor
    Text: Fairchild Semiconductor Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes continued Mfr.Õs Type Fig. Power Out Min. VF Max. Peak Emission Wavelength (nm) Beam Angle 1/2 Angle (¡) F5F1


    Original     		LED55B LED55C LED56 LED56F QEB421 QEC113 QEC122 QED123 QED222 QED233 TRANSISTOR D 880 H21A1 photodiode TRansistor A 940 k 30 transistor l14f1 photodiode 022 020 transistor transistor l14f1 optologic 0118 transistor L14G2 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm


    Original     		PDF