CNZ1120

Abstract: ON1120
Contextual Info: Transmissive Photosensors Photo lnterrupters CNZ1120 (ON1120) Photo lnterrupter For contactless SW, object detection Unit: mm • Overview CNZ1120 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element,

ON1110

Contextual Info: Panasonic Transm issive Photosensors Photo Interrupters ON1110 Photo Interrupter For contactless SW, object detection • Outline O N I 110 is a p h o to co u p le r in w hich a high efficien cy G aA s infrared light em itting diode is used as the light em itting elem ent,

IR Photosensor pcb

Abstract: ON1023 ON1024 ON1021 "Photo Interrupters" ON1022 TR 1023 oni 120
Contextual Info: Transm issive Photosensors Photo Interrupters Panasonic ON1021, ON1022, ON1023, ON1024 Photo Interrupters • Outline ■ Features O N I020 series is a transmittive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting elem ent, and a high

3 pin IR sensor pin connection

Abstract: high sensitivity reflective phototransistor ON2175 3 pin IR sensor circuit ic measurement
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2175 Reflective Photosensor Tape end sensor for DAT • Outline O N 2 1 7 5 is a se n so r w h ic h c o n sists o f a h ig h e ffic ie n c y G aA s infrared light em itting diode and a high sensitivity Si phototransistor

high sensitivity reflective phototransistor

Abstract: ON2152 Reflective photosensor response time
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2152 Reflective Photosensor • Outline O N 2152 is a p h o to se n so r detecting the change o f re fle ctiv e light in w hich a high efficiency G aA s infrared light em itting diode is used as the light em itting elem ent, and a high sensitivity Si photo transistor

photosensors

Abstract: ON1413A ON1413B
Contextual Info: Panasonic Integrated Photosensors ON1413A, ON1413B Integrated Photosensors 0.3 Unit : mm • Outline ON1413A and ON1413B are ultram iniature, highly reliable transm ittive photosensors consisting of a high-efficiency GaAs infrared light em itting diode chip that is integrated with a highsensitivity Si-integrated-photodetector chip in a double molded resin

Reflective photosensor

Abstract: ON2153
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2153 Reflective Photosensor • Outline U nit : mm M a rk f o r in d ic a tin g L E D s id e 7.5±0.2 O N 2153 is a p h o to se n so r detecting the change o f re fle ctiv e light cn in w hich a high efficiency G aA s infrared light em itting diode is used

transistor BU 102

Abstract: ON1105
Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters ON1105 Photo Interrupter Unit : mm M ark fo r indicating L E D side For contactless SW, object detection • Outline O N I 105 is a p h o t o c o u p l e r in w h i c h a h ig h e f f ic ie n c y G a A s

ON2170

Abstract: high sensitivity reflective phototransistor
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor • Outline Unit : mm Mark for indicating anode side C0.5 O N2170 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

ON1122

Abstract: ON1128 T04 transistor Photosensor ir photo diode phototransistor visible light high sensitivity phototransistor transistor T04 Photosensors
Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters ON1122, ON1128 Photo Interrupters U nit : mm ON1122 For contactless SW, object detection • Outline O N 1122 and O N I 128 are a photo co u p ler in w hich a v isible light e m ittin g d io d e is u se d as th e lig h t e m ittin g e le m e n t, an d a h ig h

photosensor phototransistor

Abstract: Photosensor OPC200 OPC260
Contextual Info: OPTEK Product Bulletin OPC260 July 1996 NPN Silicon Phototransistor Chip Type OPC260 Features Optek Technology photosensor chips are fabricated using the latest silicon planar diffused technology and are silicon nitride passivated for long term stability. All photosensors have an

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
Contextual Info: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor

AlGaAs

Abstract: optologic Inverter application note photosensors QSE156 QSE157 QSE158 QSE159
Contextual Info: Optoelectronics Plastic Silicon OPTOLOGIC Photosensors Part Number Test Conditions nm λp Ee+ (mW/cm2) max Ee+/Eetyp VOL (V) max ICC (mA) max Sensor Type Sidelooker OPTOLOGIC® Package QSE156 880 AlGaAs 0.250 1.2 0.40 5 Buffer Totem Pole QSE157 880 AlGaAs

Reflective photosensor response time

Abstract: high sensitivity reflective phototransistor CNB1009
Contextual Info: Reflective Photosensors Photo Reflectors CNB1009 Reflective Photosensor Overview Unit : mm (1.0) 7.4±0.2 1.0 1.0 19.0±0.3 2-9.5±0.2 ø2.2 Applications Detection of paper, film and cloth Optical mark reading Detection of position and edge (15.5) (2.54)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transmissive Photosensors (Photo lnterrupters) CNA1312K Photo lnterrupter For contactless SW and object detection • Overview M Di ain sc te on na tin nc ue e/ d CNA1312K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor For contactless SW and object detection • Overview M Di ain sc te on na tin nc ue e/ d CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNZ2253 (ON2253) Reflective Photosensor For contactless SW and object detection • Overview M Di ain sc te on na tin nc ue e/ d CNZ2253 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used

Contextual Info: FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Two photosensors with integrating amplifiers Integration time can be set externally Internal shift register for chain connection Detection of low supply voltage TTL/CMOS-compatible logic inputs and outputs

Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters ON1003 Photo Interrupter For contactless SW, object detection • Outline O N I 003 is a n u ltra m in ia tu re , h ig h ly re lia b le tr a n s m ittiv e p h o to se n so r in w hich a high efficiency G aA s in frared light em itting

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2175 Reflective Photosensor Tape end sensor for DAT • Outline O N2175 is a sensor w hich consists o f a high efficiency GaAs infrared light emitting diode and a high sensitivity Si phototransistor w hich are arranged together in the sam e direction. It detects the

Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters ON1215 Photo Interrupter For contactless SW, object detection • Outline ON1215 is a photocoupler in which a visible light emitting diode is used as the light emitting element, and a high sensitivity Darlington

Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters ON1002 Photo Interrupter For contactless SW, object detection • Outline O N I 0 0 2 is a n u ltra m in ia tu re , h ig h ly re lia b le tr a n s m ittiv e p h o to se n so r in w hich a h igh efficiency G aA s infrared lig h t em itting

re 04501

Contextual Info: Panasonic Integrated Photosensors ON1402A/B, ON1403A/B Integrated Photosensors U nit : mm O N 1 4 0 2 A /B For contactless SW, object detection • Outline O N 1402A /B and O N 1403A /B are a p h otocoupler in w hich a high e ffic ie n c y G aA s in fra re d lig h t e m ittin g d io d e is u se d as th e lig h t

Contextual Info: Panasonic Transmissive Photosensors Photo Interrupters ON1111, ON1112 Photo Interrupters ON1111 For contactless SW, object detection • Outline M ark for indicating LED side O N 1111 and O N 1112 are a photocoupler in w hich a high efficiency G a A s in fra re d lig h t e m ittin g d io d e is u se d as th e lig h t e m ittin g