PHOTO SENSORS
Abstract: fiber optical photo detector LED Reflective Optical Sensor Infrared photosensor OPTICAL INTERRUPTER position infrared detector object detection
Text: S. Classification of Photo Sensors The Toshiba Photo Sensor is classified as follows: Infrared LED [Emitters Visible LED Photo Transistor Photo sensors• Photo Diode IDetectors Photo 1C : Photo Interrupter ; Compound ; sensors : Photo Reflective Sensor 3. Photosensor Applications
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photosensor
Abstract: QSE157 QSE158
Text: QSE156, QSE157, QSE158, QSE159 QSE156C, QSE157C, QSE158C, QSE159C Plastic Silicon OPTOLOGIC Photosensor tm Features Description • Bipolar silicon IC The QSE15X family are OPTOLOGIC® ICs which feature a Schmitt trigger at output which provides hysteresis for noise immunity and pulse shaping. The basic
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QSE156/C,
QSE157/C,
QSE158/C,
QSE159/C
QSE156,
QSE157,
QSE158,
QSE159
QSE156C,
QSE157C,
photosensor
QSE157
QSE158
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Untitled
Abstract: No abstract text available
Text: External dimensions Unit : mm RPR-220UC30N Reflective photosensor (photoreflector) 2.8 6.4 Through hole 2.8 Absolute maximum ratings (Ta=25°C) Unit 50 mA Reverse voltage VR 5 V PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO
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RPR-220UC30N
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CNZ1120
Abstract: ON1120
Text: Transmissive Photosensors Photo lnterrupters CNZ1120 (ON1120) Photo lnterrupter For contactless SW, object detection Unit: mm • Overview CNZ1120 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element,
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CNZ1120
ON1120)
CNZ1120
ON1120
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H6779
Abstract: TPMH9003E01 H5784 R7400U BMOM AD H5783 H5773 H6780 pmt divider circuit pmt amplifier circuit
Text: PHOTOSENSOR MODULES H5773/H5783/H6779/ H6780/H5784 SERIES High Sensitivity, Wide Dynamic Range Fast Time Response The Photosensor Module is an optical sensor with extremely high sensitivity, capable of detecting light levels 1/10000 as low as those detectable with semiconductor photodiodes.
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H5773/H5783/H6779/
H6780/H5784
H5773,
H5783
H6779,
H6780
SE-171-41
TPMO1007E04
H6779
TPMH9003E01
H5784
R7400U
BMOM AD
H5773
pmt divider circuit
pmt amplifier circuit
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ON1110
Abstract: No abstract text available
Text: Panasonic Transm issive Photosensors Photo Interrupters ON1110 Photo Interrupter For contactless SW, object detection • Outline O N I 110 is a p h o to co u p le r in w hich a high efficien cy G aA s infrared light em itting diode is used as the light em itting elem ent,
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ON1110
ON1110
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ON2530
Abstract: 3000Lx Reflective photosensor kodak ccd
Text: H z > y .IL — K & | $j[Z Photosensor Units (Reflective Type) ON2530 • ■Outline c e s ON2530 -> ') - X j -fnmtîbzytm j% i L / j/ M 1 -!, tlM \ % O N 2 5 3 0 Series are small light weight, high re lia b ility photo sensor unit composed of a modulated phot IC and a
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ON253Q
oN253o
ON2530
3000lx)
3000Lx
Reflective photosensor
kodak ccd
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IR Photosensor pcb
Abstract: ON1023 ON1024 ON1021 "Photo Interrupters" ON1022 TR 1023 oni 120
Text: Transm issive Photosensors Photo Interrupters Panasonic ON1021, ON1022, ON1023, ON1024 Photo Interrupters • Outline ■ Features O N I020 series is a transmittive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting elem ent, and a high
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ON1021,
ON1022,
ON1023,
ON1020
ON1023)
ON1024)
ON1021
IR Photosensor pcb
ON1023
ON1024
ON1021
"Photo Interrupters"
ON1022
TR 1023
oni 120
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3 pin IR sensor pin connection
Abstract: high sensitivity reflective phototransistor ON2175 3 pin IR sensor circuit ic measurement
Text: Panasonic Reflective Photosensors Photo Reflectors ON2175 Reflective Photosensor Tape end sensor for DAT • Outline O N 2 1 7 5 is a se n so r w h ic h c o n sists o f a h ig h e ffic ie n c y G aA s infrared light em itting diode and a high sensitivity Si phototransistor
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ON2175
ON2175
3 pin IR sensor pin connection
high sensitivity reflective phototransistor
3 pin IR sensor circuit
ic measurement
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high sensitivity reflective phototransistor
Abstract: ON2152 Reflective photosensor response time
Text: Panasonic Reflective Photosensors Photo Reflectors ON2152 Reflective Photosensor • Outline O N 2152 is a p h o to se n so r detecting the change o f re fle ctiv e light in w hich a high efficiency G aA s infrared light em itting diode is used as the light em itting elem ent, and a high sensitivity Si photo transistor
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ON2152
ON2152
high sensitivity reflective phototransistor
Reflective photosensor response time
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photosensors
Abstract: ON1413A ON1413B
Text: Panasonic Integrated Photosensors ON1413A, ON1413B Integrated Photosensors 0.3 Unit : mm • Outline ON1413A and ON1413B are ultram iniature, highly reliable transm ittive photosensors consisting of a high-efficiency GaAs infrared light em itting diode chip that is integrated with a highsensitivity Si-integrated-photodetector chip in a double molded resin
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ON1413A,
ON1413B
ON1413A
ON1413B
ON1413A)
photosensors
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Reflective photosensor
Abstract: ON2153
Text: Panasonic Reflective Photosensors Photo Reflectors ON2153 Reflective Photosensor • Outline U nit : mm M a rk f o r in d ic a tin g L E D s id e 7.5±0.2 O N 2153 is a p h o to se n so r detecting the change o f re fle ctiv e light cn in w hich a high efficiency G aA s infrared light em itting diode is used
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ON2153
ON2153
Reflective photosensor
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OP555
Abstract: OPS695 OPS696 OPS697 OPS698
Text: 0 o p te k Product Bulletin OPS695 July 1996 LED and Photosensor Pair Types OPS695, OPS696, OPS697, OPS698 Features • • • Lateral side-looking plastic package High current transfer ratio Low cost plastic package Description The OPS695 through OPS698 each
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OPS695
OPS695,
OPS696,
OPS697,
OPS698
OPS698
OP145)
OP555)
distance40
OP555
OPS696
OPS697
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diode A4u
Abstract: 1517 ON1517HH ON1517HH-A
Text: y h {'ÆL'Æifô /fc h i r Photosensor Units Transmittive Type) O N 1517H H -(A ) •« ü ■ Outline ON1517HH—(A) !±, i'- f t - K * , i ?vL % m, M M jfe The O N 1517H H -{A ) are small, light weight, high preci sion and high reliability photo sensor units composed of a
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ON1517HH-
1517HHâ
ON1517HHâ
-20mA
diode A4u
1517
ON1517HH
ON1517HH-A
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transistor BU 102
Abstract: ON1105
Text: Panasonic Transmissive Photosensors Photo Interrupters ON1105 Photo Interrupter Unit : mm M ark fo r indicating L E D side For contactless SW, object detection • Outline O N I 105 is a p h o t o c o u p l e r in w h i c h a h ig h e f f ic ie n c y G a A s
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ON1105
transistor BU 102
ON1105
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ON2170
Abstract: high sensitivity reflective phototransistor
Text: Panasonic Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor • Outline Unit : mm Mark for indicating anode side C0.5 O N2170 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated
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ON2170
ON2170
high sensitivity reflective phototransistor
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ON1122
Abstract: ON1128 T04 transistor Photosensor ir photo diode phototransistor visible light high sensitivity phototransistor transistor T04 Photosensors
Text: Panasonic Transmissive Photosensors Photo Interrupters ON1122, ON1128 Photo Interrupters U nit : mm ON1122 For contactless SW, object detection • Outline O N 1122 and O N I 128 are a photo co u p ler in w hich a v isible light e m ittin g d io d e is u se d as th e lig h t e m ittin g e le m e n t, an d a h ig h
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ON1122,
ON1128
ON1122
ON1128
T04 transistor
Photosensor
ir photo diode
phototransistor visible light
high sensitivity phototransistor
transistor T04
Photosensors
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photosensor phototransistor
Abstract: Photosensor OPC200 OPC260
Text: OPTEK Product Bulletin OPC260 July 1996 NPN Silicon Phototransistor Chip Type OPC260 Features Optek Technology photosensor chips are fabricated using the latest silicon planar diffused technology and are silicon nitride passivated for long term stability. All photosensors have an
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OPC260
OPC26Q
OPC200
OPC26OVP
OPC260TP
OPC260WP
OPC26OSPues.
photosensor phototransistor
Photosensor
OPC200
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DDC101
Abstract: DDC101P DDC101U DEM-DDC101P-C REF1004 photosensor interface WITH ADC
Text: DDC101 20-BIT ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS ● MONOLITHIC CHARGE INPUT ADC ● DIGITAL FILTER NOISE REDUCTION: 0.9ppm, rms ● DIGITAL ERROR CORRECTION: CDS ● DIRECT PHOTOSENSOR DIGITIZATION ● PRECISION INSTRUMENTATION ● INFRARED PYROMETRY
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DDC101
20-BIT
15kHz
DDC101
DEM-DDC101P-C
DDC101.
DDC101P
DDC101U
REF1004
photosensor interface WITH ADC
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QSE158
Abstract: Photosensor QSE157 QEE113 QSE156 QSE159 optologic
Text: PLASTIC SILICON OPTOLOGIC PHOTOSENSOR QSE156 QSE157 QSE158 QSE159 PACKAGE DIMENSIONS 0.175 4.44 0.100 (2.54) Ø 0.065 (1.65) 0.200 (5.08) Ø 0.095 (2.41) 0.100 (2.54) 0.500 (12.7) MIN Part Number Definitions 0.020 (0.51) SQ. 3X 0.025 (0.64) 0.075 (1.90)
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QSE156
QSE157
QSE158
QSE159
QSE156
QSE157
QSE158
Photosensor
QEE113
QSE159
optologic
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Photosensor
Abstract: QPA8259 optologic
Text: HERMETIC PAIR OPTOELECTRONICS QPA8259 .0 30 0 .7 6 ' MAX .5 00 (1 2 .7 8 ) MIN PHOTOSENSOR INFRARED LED ST1661 NOTES: 1. DIM ENSIONS ARE IN INCHES [mm], 2. TOLERANCE IS ±.0 1 0 [.25] UNLESS OTHERWISE SPECIFIED. DESCRIPTION The QPA8259 consists of an 880nm AIGaAs LED
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QPA8259
ST1661
QPA8259
880nm
Photosensor
optologic
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S2281 series Si photodiode with BNC connector S2281 series is Si photodiodes sealed in a metal package with a BNC connector. This configuration allows easy connection to Hamamatsu C9329 photosensor amplifier S2281-01 has a large terminal capacitance which may cause a gain peaking to occur when C9329 is used with the
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S2281
C9329
S2281-01
S9219
E2573
SE-171
KSPD1044E02
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Untitled
Abstract: No abstract text available
Text: MODULE Photosensor amplifier C6386-01 Light-to-voltage conversion amplifier with optical fiber Features Applications l Easy handling Built-in photodiode allows easy detection of light just by connecting to a voltmeter. l Optical fiber light input Measures light at a narrow detection point. Separating the
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C6386-01
SE-171
KACC1101E01
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L14F1 phototransistor datasheet
Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
Text: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor
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BPW36
BPW37
L14G1
L14G2
L14G3
L14P1
L14P2
L14C2
L14N1
L14N2
L14F1 phototransistor datasheet
L14F1 PHOTOTRANSISTOR
Phototransistor L14F1
Phototransistor L14G3
phototransistor 650 nm
l14g1 equivalent
Phototransistor L14G2
L14G3 phototransistor datasheet
L14G3 phototransistor
L14G1 phototransistor
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