CNZ1413A
Abstract: ON1413A
Text: Integrated Photosensors CNZ1413A ON1413A Integrated Photosensors SEC. A-A' Device center 1 2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 6 V Forward current (DC) IF 50 mA Power dissipation *1 PD 75 mW Input (Light Reverse voltage (DC)
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CNZ1413A
ON1413A)
CNZ1413A
ON1413A
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Untitled
Abstract: No abstract text available
Text: Integrated Photosensors CNZ1413 Integrated Photosensors SEC. A-A' 1.0 Device center Ultraminiature : 4.2 x 4.2 mm (height : 5.2 mm) Highly precise position detection (slit width : 0.3 mm) Gap width : 1.2 mm 2 With attachment positioning pin Symbol Ratings
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CNZ1413
ON1413A)
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CNZ1413
Abstract: ON1413A
Text: Integrated Photosensors CNZ1413 Integrated Photosensors Ultraminiature : 4.2 x 4.2 mm height : 5.2 mm Highly precise position detection (slit width : 0.3 mm) Gap width : 1.2 mm 2 Symbol Ratings Reverse voltage (DC) 6 V IF 50 mA PD*1 75 mW IO 20 mA Output voltage
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CNZ1413
CNZ1413
ON1413A
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CNZ1413
Abstract: ON1413A
Text: Integrated Photosensors CNZ1413 Integrated Photosensors A' 1.0 Ultraminiature : 4.2 x 4.2 mm (height : 5.2 mm) Highly precise position detection (slit width : 0.3 mm) 1 2 With attachment positioning pin Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC)
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CNZ1413
CNZ1413
ON1413A
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photosensors
Abstract: ON1413A ON1413B
Text: Panasonic Integrated Photosensors ON1413A, ON1413B Integrated Photosensors 0.3 Unit : mm • Outline ON1413A and ON1413B are ultram iniature, highly reliable transm ittive photosensors consisting of a high-efficiency GaAs infrared light em itting diode chip that is integrated with a highsensitivity Si-integrated-photodetector chip in a double molded resin
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ON1413A,
ON1413B
ON1413A
ON1413B
ON1413A)
photosensors
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Untitled
Abstract: No abstract text available
Text: Panasonic Integrated Photosensors ON1413A, ON1413B Integrated Photosensors • Outline O N 1413A and O N 1413B are u ltram in iatu re, hig h ly reliab le tran sm ittiv e pho to sen so rs co n sistin g o f a h ig h -efficien cy G aAs infrared light em itting diode chip that is integrated w ith a highsensitivity Si-integrated-photodetector chip in a double molded resin
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ON1413A,
ON1413B
1413B
ON1413A)
1413B
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ON3105
Abstract: HUL7281 ON1024 LDHU01
Text: Photo Couplers • Reflective Photosensors Photo Reflectors ■ Integrated Photosensors Package No. Vcc V ol (V) 0.25 1Fth (mA) loH ON1402A/B IS5-1 (V) 4.5 to 16 ON1403/VB 105-2 4.5 to 16 0.25 100 5 105-1 4.5 to 16 0.14 100 4 ON1413A/B ON1414A/B 105-1 2.2 to 7
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ON1402A/B
ON1403/VB
ON2152
ON2153
ON2253
ON2170
ON1413A/B
ON1414A/B
R004-2
R004-1
ON3105
HUL7281
ON1024
LDHU01
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1k88
Abstract: PN3634 1R88 6N3P PNA4602M
Text: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206
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PN3104
PN3106
PN3206
PN312D
PFES04-1N
PFOS04-2N
PN322D
PN3105
PN3112
1k88
PN3634
1R88
6N3P
PNA4602M
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PN126S
Abstract: ON1503 PN7103
Text: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10
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PN312C
PN312E
PN3104
PN3106
PN3206
PN312D
PN322D
PN3105
PN3112
PN3108
PN126S
ON1503
PN7103
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PN7103
Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD
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PN101/102*
PN101F/102F*
ML02-1/
ML03-1
MF02-1/
PN312E
PF204-3
PN3104
PFU04-5
PN106*
PN7103
pf204
mr03
C302
C5031
PNA4602M
ON1501
PN334
PN106
PNA4602
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bt35f
Abstract: mf03 c PNA4602M
Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division
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PN312E
PN3104
PN3106
PN3206
PN312D
PN322D
PN3105
PN3112
PN3108
PN3107
bt35f
mf03 c
PNA4602M
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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ON1501
Abstract: LN29RCPX LNG242RDA ON1120 CNZ1215 LN21RPH-TA ON1024 ON3131 LN39GCPX on1128
Text: -y 7‘LED Surface Mounting Chip LED GW Bi-Color Type Type No. Lighting Color LN2162C68— TR ÎÊ *\fÎi^5 È Î§ Pure Green Orange Absolute Maximum Ratings (Ta=25"C) L ig h tin g C o lo r PD (m W ) 1 F( m A ) l FP( m A ) * V r (V) T o p r ( iC ) P u re G re e n
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LN2162C68--
LNG221RFR
LNG221RKR
LNG222RFR
LNG222RKR
LNG224RFR
LNG224RKR
LNG229RFR
LNG233RFR
LNG240CDAE
ON1501
LN29RCPX
LNG242RDA
ON1120
CNZ1215
LN21RPH-TA
ON1024
ON3131
LN39GCPX
on1128
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OS-3502
Abstract: OS-3602 OS3502 lm117 3.3V PM47 TLP1024 TLP1025 TLP1029 TLP1034 MARK UU1
Text: -331 &ÍJ % ffy TLP1023 £ í± m 'T & £ TLP1024 * ;l •/ híS X U •/ ' 3 >v Y / FLU I FHL max ;.mA: max mA: mm! (mm 5 0.5 - 3 0.5 4 ft is (V ) - WÌlir-ìmft H íFí fit *¡ T„„, cc im A ) V cc (V ) m in <V) m ax (V ) t.mA) ro 14 280 5 4.5 17 50
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TLP1024
Pl-290
TLP1025
PI-339
TLP1029
PI-148
TLP1034
OS-3502
PI-149
OS-3502
OS-3602
OS3502
lm117 3.3V
PM47
TLP1024
TLP1025
TLP1029
TLP1034
MARK UU1
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