infrared laser diode
Abstract: Laser-Diode 808 808nm laser diode Laser Diode 808 nm 808nm-5mW 808nm
Text: US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE
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808nm-5mW
808nm
com/n808nm5m
infrared laser diode
Laser-Diode 808
808nm laser diode
Laser Diode 808 nm
808nm
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laser diode 780 nm
Abstract: 780nm-5mW "Photo Diode" 780nm 5MW infrared laser diodes 780nm laser diode 8 mW 780NM Laser-Diode laser diode style a 780nm laser diode US-Lasers
Text: US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-5mW - Infrared Laser Diodes Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA z Index Guided MQW Structure
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780nm-5mW
780nm
com/n780nm5m
laser diode 780 nm
"Photo Diode"
780nm 5MW infrared laser diodes
780nm laser diode 8 mW
780NM Laser-Diode
laser diode style a
780nm laser diode
US-Lasers
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Abstract: No abstract text available
Text: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure
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904nm-5mW
904nm
com/n904nm5m
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780nm 5MW infrared laser
Abstract: 780nm-5mW 780nm laser diode 8 mW 780nm 5MW infrared laser diodes
Text: US-Lasers: 780nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 780nm-5mW - Infrared Laser Diodes and Infrared Diode Laser Modules Back to Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z Collect Specs: 3/8 - 56 Thread Size
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780nm-5mW
780nm
com/m780nm5m
780nm 5MW infrared laser
780nm laser diode 8 mW
780nm 5MW infrared laser diodes
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laser diode module 820 nm
Abstract: 808nm laser diode 808nm
Text: US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diodes and Infrared Diode Laser Modules Back To Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: z z z Collect Specs: 3/8 - 56 Thread Size
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808nm-5mW
808nm
com/m808nm5m
laser diode module 820 nm
808nm
laser diode 808nm
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infrared diode
Abstract: TRANSISTOR C 2577 GL4800E0000F Infrared Emitting Diode Infrared Phototransistor infrared emitting CIRCUIT infrared infrared transistor GL527V INFRARED DIODES
Text: Copyright 2005, Sharp Electronics Corp. All Rights Reserved. Chapter 3 – Use of Infrared Emitting Diodes 3-1 Chapter 3 – Use of Infrared Emitting Diodes 3-2 Chapter 3 – Use of Infrared Emitting Diodes 3-3 multiplied by n. Chapter 3 – Use of Infrared Emitting Diodes
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KDA0429
Abstract: KP-1608F3C KP-1608SF4C
Text: INFRARED EMITTING DIODES KP-1608F3C KP-1608SF4C Description Features ! WATER CLEAR LENS AVAILABLE. F3 Made with Gallium Arsenide Infrared Emitting ! 1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. diodes. !HIGH POWER OUTPUT. SF4 Made with Gallium Aluminum Arsenide Infrared
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KP-1608F3C
KP-1608SF4C
2000PCS
KDA0429
SEP/21/2001
KDA0429
KP-1608F3C
KP-1608SF4C
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TRANSISTOR D 880
Abstract: H21A1 photodiode TRansistor A 940 k 30 transistor l14f1 photodiode 022 020 transistor transistor l14f1 optologic 0118 transistor L14G2 transistor
Text: Fairchild Semiconductor Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes continued Mfr.Õs Type Fig. Power Out Min. VF Max. Peak Emission Wavelength (nm) Beam Angle 1/2 Angle (¡) F5F1
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LED55B
LED55C
LED56
LED56F
QEB421
QEC113
QEC122
QED123
QED222
QED233
TRANSISTOR D 880
H21A1 photodiode
TRansistor A 940
k 30 transistor
l14f1 photodiode
022 020 transistor
transistor l14f1
optologic
0118 transistor
L14G2 transistor
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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LN162S
Abstract: GaAs 1000 nm Infrared Emitting Diode
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :
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LN162S
LN162S
GaAs 1000 nm Infrared Emitting Diode
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:
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LN162S
CTRLR102-001
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LN162S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :
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LN162S
LN162S
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189M
100mA
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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GaAs 850 nm Infrared Emitting Diode
Abstract: Infrared Emitting Diode LN52
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm
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100mA
GaAs 850 nm Infrared Emitting Diode
Infrared Emitting Diode
LN52
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PHOTOTRANSISTOR 3 PIN
Abstract: rIP 31 TRANSISTOR led phototransistor 3 pin Infrared phototransistor TO18 3 pin phototransistor IR LED infrared led Transistor AC 51 Photosensors Optoisolators "Photo Interrupter" dual transistor
Text: OPTOELECTRONICS D e s c rip tio n TABLE OF CONTENTS Page D e s c rip tio n Page How To Use This Catalog 2 INFRARED IR COMPONENTS Part Number Index 3 How To Use The Infrared (IR) Section 31 Infrared (IR) Specification Definitions 32 Plastic Infrared Liqht Emittinq Diodes
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To-18
T-100)
T-100
QTLP91X-X
QTLP650X-X
/QTLP670X-X
PHOTOTRANSISTOR 3 PIN
rIP 31 TRANSISTOR
led phototransistor 3 pin
Infrared phototransistor TO18
3 pin phototransistor
IR LED infrared led
Transistor AC 51
Photosensors
Optoisolators
"Photo Interrupter" dual transistor
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Untitled
Abstract: No abstract text available
Text: Emitter Specifications _ 1N6264,1N6265 Infrared Em itter G allium Arsenide Infrared Em itting D iode The 1X6264 and 1N6265 Series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy. They are ideally
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1N6264
1N6265
1X6264
1N6265
1N6264,
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Untitled
Abstract: No abstract text available
Text: European “Pro Electron” Registered Types _ CQX14, CQX15, CQX16, CQX17 Infrared Emitter GaAs Infrared Emitting Diode The CQX14, CQX15, C.QX16, CQXI7 series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy with a peak wave
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CQX14,
CQX15,
CQX16,
CQX17
CQX14
CQX16
CQX17
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Untitled
Abstract: No abstract text available
Text: Infrared Emitting Diodes
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infrared detectors
Abstract: Infrared Emitting Diode LNA2601L
Text: Panasonic Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm
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LNA2601L
infrared detectors
Infrared Emitting Diode
LNA2601L
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F5E1
Abstract: No abstract text available
Text: Emitter Specifications F5D1, F5D2, F5D3, F5E1, F5E2, F5E3 Infrared Emitter Gallium Aluminum Arsenide Infrared Emitting Diode T h e F5D and F5E Series are infrared emitting diodes. They exhibit high power output and a typical peak wavelength o f 880 nanom eters and
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AP 1100 R1
Abstract: LN58
Text: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :
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