infrared diode
Abstract: TRANSISTOR C 2577 GL4800E0000F Infrared Emitting Diode Infrared Phototransistor infrared emitting CIRCUIT infrared infrared transistor GL527V INFRARED DIODES
Text: Copyright 2005, Sharp Electronics Corp. All Rights Reserved. Chapter 3 – Use of Infrared Emitting Diodes 3-1 Chapter 3 – Use of Infrared Emitting Diodes 3-2 Chapter 3 – Use of Infrared Emitting Diodes 3-3 multiplied by n. Chapter 3 – Use of Infrared Emitting Diodes
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infrared diode
Abstract: GL1F20 IS1U20 serial vs parallel communication
Text: GL1F20 GL1F20 Infrared Communication IrDA1.0 Compatible InfraredEmitting Diode • Features ■ Outline Dimensions 1. IrDA1.0 compatible infrared emitting diode (Transmission rate : 2.4 to 115.2kbps) (Unit : mm) 2.2 2. Built-in infrared emitting diode circuit
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GL1F20
IS1U20)
GL1F20)
infrared diode
GL1F20
IS1U20
serial vs parallel communication
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side view infrared diode sharp
Abstract: GP2Y0A60 GP2Y10 GP2Y0A60SZ0F/GP2Y0A60SZLF GP2Y0AF15
Text: INFRARED EMITTING DIODE LINEUP / INFRARED EMITTING DIODES OPTO • Infrared Emitting Diode Lineup Type Single-end lead Side view type Surface mount type Package Half intensity angle Features Epoxy resin with lens Epoxy resin with lens/ leadless General purpose/Narrow beam angle
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GL480E00000F
GL4800E0000F
GL100MN0MP
GL100MN1MP
GL100MD1MP1
GP2Y0AH01K0Fâ
GP2Y1010AU0F
GP2Y1012AU0F
GP2Y1023AU0F
side view infrared diode sharp
GP2Y0A60
GP2Y10
GP2Y0A60SZ0F/GP2Y0A60SZLF
GP2Y0AF15
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm
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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:
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LN162S
CTRLR102-001
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LN162S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :
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LN162S
LN162S
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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LN172
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.
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LN172
10nductor
LN172
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LN52
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm
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GL1F20
Abstract: GL1F201 IS1U20
Text: GL1F20/GL1F201 Compliant GL1F20/GL1F201 IrDA1.0 Infrared Emitting Diode • Outline Dimensions ■ Features 1. Compliant with IrDA1.0 Date rate : 2.4k to 115.2kbps 2. Built-in infrared emitting diode circuit 3. Pair use with IS1U20 is recommended. (Unit : mm)
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GL1F20/GL1F201
GL1F20/GL1F201
IS1U20
GL1F20
GL1F201
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Untitled
Abstract: No abstract text available
Text: HOA7720/7730 Series Connectorized Transmissive Optoschmitt Sensor DESCRIPTION The HOA7720/7730 Series consists of an infrared emitting The infrared emitting diode is biased internally, eliminating the diode facing an Optoschmitt detector encased in a black
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HOA7720/7730
HOA7720-M11)
HOA7730-M11)
006496-1-EN
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
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AA3528F3S
2000pcs
DSAL0863
SEP/01/20120863
SEP/01/2012
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AA3528F3S
Abstract: smd diode f3
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.
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AA3528F3S
1500pcs
DSAL0863
SEP/06/2010
W2010
AA3528F3S
smd diode f3
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AA3528F3S
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.
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AA3528F3S
1500pcs
DSAL0863
APR/09/2011
AA3528F3S
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 1500pcs / reel. z Moisture sensitivity level : level 3.
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AA3528F3S
1500pcs
DSAL0863
APR/09/2011
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Untitled
Abstract: No abstract text available
Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.
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AA3528F3S
2000pcs
DSAL0863
MAR/02/2013
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Untitled
Abstract: No abstract text available
Text: Infrared Emitting Diode Description The H E7601SG is a 770 nm band GaAIAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.
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E7601SG
HE7601SG:
HE7601SG
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LN184
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN184 Unit : mm , , 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 0.29 Light source for distance measuring systems ø4.6±0.15 Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : λP = 880 nm
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LN184
LN184
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LN69
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Emitted light spectrum suited for silicon photodetectors : λP = 940 nm typ. Good radiant power output linearity with respect to input current Long lifetime, high reliability
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Infrared Phototransistor
Abstract: TPOWER
Text: Optoisolator Specifications 4N38, 4N38A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. These
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4N38A
4N38A
E51868
0110b
Infrared Phototransistor
TPOWER
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HE8811
Abstract: No abstract text available
Text: HE8811 ODE-208-051 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam
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HE8811
ODE-208-051
HE8811
HE8811:
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LNA2601L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Features High-power output, high-efficiency 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Infrared light emission close to monochromatic light : λP = 950 nm
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LNA2601L
LNA2601L
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LN162S
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency: PO = 3.5 mW (typ.) Infrared light emission close to monochromatic light: λP = 950 nm (typ.)
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2002/95/EC)
LN162S
LN162S
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