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    INGAAS APD PHOTODIODE, 1550 SENSITIVITY Search Results

    INGAAS APD PHOTODIODE, 1550 SENSITIVITY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    MLC1550-452MLC Coilcraft Inc General Purpose Inductor, 4.5uH, 20%, 1 Element, Iron-Core, SMD, 5452, CHIP, 5452, ROHS COMPLIANT Visit Coilcraft Inc

    INGAAS APD PHOTODIODE, 1550 SENSITIVITY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IAG 080

    Abstract: photodiode ingaas ghz
    Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited


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    Untitled

    Abstract: No abstract text available
    Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited


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    Untitled

    Abstract: No abstract text available
    Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited


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    Untitled

    Abstract: No abstract text available
    Text: Detectors Only available on request! InGaAs Avalanche Photodiode IAE-Series Description The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally


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    Untitled

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally suited to eyesafe rangefinding applications, free space optical


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    IAE080X

    Abstract: IAE200X InGaas PIN photodiode, 1550 sensitivity application rangefinding InGaAs APD photodiode 1550 inGaAs photodiode 1550 avalanche photodiode free space InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR InGaas PIN photodiode, 1550 sensitivity
    Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally suited to eyesafe rangefinding applications, free space optical


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    InGaas PIN photodiode, 1550 nec

    Abstract: APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm NR8360JP-BC InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application
    Text: PRELIMINARY DATA SHEET NEC's ø30 µm InGaAs APD IN DIP PACKAGE NR8360JP-BC FOR OTDR APPLICATION FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm NEC's NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is


    Original     		PDF NR8360JP-BC NR8360JP-BC 14-PIN InGaas PIN photodiode, 1550 nec APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs APD with preamp G9910-14 ROSA type, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High gain: 15 V/mW λ=1550 nm l Differential output l Responsivity: -5 to -33 dBm l Optical return loss: 35 dB l Isolation type: Housing and signal ground are


    Original     		PDF G9910-14 SE-171 KAPD1016E01

    C30817E

    Abstract: SILICON APD Pre-Amplifier
    Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.


    Original     		PDF C30659 900/1060/1550/1550E -1550E C30817EH, C30902EH, C30954EH C30956EH C30645EH C30662EH C30817E SILICON APD Pre-Amplifier

    Untitled

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at


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    IAE080X

    Abstract: InGaas PIN photodiode, 1550 sensitivity IAE200X iae200 rangefinding InGaas APD photodiode, 1550 sensitivity InGaas PIN photodiode, 1550 ,sensitivity InGaAs photodiode spectral response TO46 photodiode free space communication
    Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at


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    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


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    InGaas PIN photodiode, 1550 NEP

    Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
    Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at


    Original     		PDF

    IAG 080

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at


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    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    JDSU ERM

    Abstract: avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550
    Text: COMMUNICATIONS COMPONENTS 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx Key Features • Sensitivity of -27.3 dBm • TIA gain of 5.5 kΩ (differential) • Very small form factor MSA coplanar package • Low cost • Available with FC, LC or SC connectors


    Original     		PDF ERM578LMX 498-JDSU 5378-JDSU JDSU ERM avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550

    InGaAs Epitaxx APD

    Abstract: InGaAs apd photodiode Photodiode apd high sensitivity InGaas PIN photodiode, 1550 sensitivity APD bias gain avalanche photodiode receiver InGaAs Epitaxx linear APD, applications, bias supply receiver avalanche 1550 fiber 2.5 10 gb APD receiver
    Text: Product Bulletin ERM 537/547 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω All specifications without connector. Parameter Responsivity APD PIN Dark Current


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    C30817E

    Abstract: datasheet apd 1550
    Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,


    Original     		PDF C30659 12-lead C30817EH, C30902EH, C30954EH, C30956EH, C30645EH C30662EH, C30950 C30817E datasheet apd 1550

    inGaAs photodiode 1550

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE 200 avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at


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    ERM547

    Abstract: JDSU Transponder apd receiver 10 gb APD receiver JDSU ERM jdsu apd avalanche photodiode ingaas ghz Photodiode apd high sensitivity jdsu avalanche photodiode jds uniphase receiver
    Text: Product Bulletin 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module ERM 537/547 The JDS Uniphase ERM 537/547 series consists of small form factor SFF 2.5 Gb/s SONET/ SDH optical receivers with InGaAs PIN or avalanche photodiodes and high bandwidth linear transimpedance amplifiers. They are


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    InGaAs Epitaxx APD

    Abstract: Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX
    Text: Product Bulletin ERM 578BKX 10 Gb/s Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +8V All specifications without connector. Parameter APD Breakdown Voltage, Vb


    Original     		PDF 578BKX InGaAs Epitaxx APD Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX

    APD 1550 nm

    Abstract: FRM5W231DR apd 1550 InGaAs photodiode 1310 1550 APD 1310 detector L50II apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550 APD 1310nm ingaas apd preamp receiver -20 1.25
    Text: FRM5W231DR 2.5 Gb/s APD Detector Preamp FEATURES • Integrated Design Optimizes Performance at High Bit Rates up to 2.5 Gb/s applications. • -32 dBm Typical Sensitivity • -7 dBm Overload Power typ. • -30 dB Optical Return Loss (ORL) • 30 Micron Active Area APD


    OCR Scan     		PDF FRM5W231DR 1310nm 1550nm 231DR APD 1550 nm FRM5W231DR apd 1550 InGaAs photodiode 1310 1550 APD 1310 detector L50II apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550 APD 1310nm ingaas apd preamp receiver -20 1.25

    FRM13S221PR

    Abstract: FRM15U621CU FRM13S621 FRM13S221 FRM13S621PR 621C apd 1550, sensitivity 30 dBm Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity 13S621PR
    Text: FRM13R621CL FRM15U621CL FRMI3S621PR FRM13S221PR APD Detector Preamp PIN Detector Preamp FEATURES • • • • Monolithic GaAs 1C Transimpedance Amplifier High Sensitivity and Wide Dynamic Range Low Noise with High Gain Meets SONET and ITU-T Recommendations


    OCR Scan     		PDF FRM13R621CL FRM15U621CL FRMI3S621PR FRM13S221PR OC-12 FRM15U621CU FRM13R621CU FRM13S221PR FRM13S621PR FRM13S621 FRM13S221 621C apd 1550, sensitivity 30 dBm Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity 13S621PR