RUTTONSHA all diodes
Abstract: RUTTONSHA SILICON RECTIFIER 6 Fmr 60 25 fmr 160 RUTTONSHA SILICON RECTIFIER 6 F 6 FMR 40 RUTTONSHA RUTTONSHA 120 6 FMR 40 rectifier RUTTONSHA SILICON RECTIFIER 6 Fmr 120 RUTTONSHA type 6 fmr 100
Text: Ruttonsha International Rectifier Ltd. SILICON RECTIFIERS RUTTONSHA 3 & 6 Ampere Silicon Power Diodes FEATURES ❖ All diffused series. ❖ Available in normal & reverse polarity. ❖ Device conforms to IS 3700 III & IS 4400 (III). ❖ Device outline conforms to IS 5000 (Do. 4) except stud.
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Abstract: No abstract text available
Text: INTERNATIONAL SEMICOND MIE ]> • C10G037Ô 0000014 160 BlISEri . HIGH VOLTAGE RECTIFIER ASSEMBLIES 25 mA High Voltage Silicon Rectifiers r IS Part Number HVD08 HVD10 HVD12 HVD1S HVD20 HVD25 HVD30 HVD35 \^HVD40 Peak Reverse Voltage PRV volts) 8,000 10,000
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10G037Ã
HVD08
HVD10
HVD12
HVD20
HVD25
HVD30
HVD35
HVD40
DO-201
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL S e m ic o n d u c to r, I nc. DL4001 thru DL4007 SURFACE MOUNT 1.0 Amp SILICON RECTIFIER DIODE FEATURES: G • Plastic m aterial has Underwriters Laboratory • G1 Flam m ability Classification 94 V - 0 ■ Low Leakage ■ G lass Passivated Junction
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DL4001
DL4007
00037fl
DG07Mti
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Untitled
Abstract: No abstract text available
Text: Bulletin 12122 rev. A 07/97 International IS R Rectifier SAFE/R Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A * 'fsm = 950A VR RM800 to 1600V RRM Description/Features The 60EPS. rectifier SAFE/Rsexies has been optimized for very low forward voltage drop, with moderate leakage.
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60EPS.
VRR07/97
S5452
QQ3Q21S
O-247AC
0D3G21b
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international rectifier NE 22
Abstract: No abstract text available
Text: Bulletin 12134 rev. B 11/97 International IGR Rectifier Series 20ETS.FP s a f e IR INPUT RECTIFIER DIODE TO-220 FULLPAK Description/Features VF < 1V @ 10A i 1 ’f s m = 300A VRRM800 to 1600V 1 The 20ETS.FP rectifier S A F E lR series has been optimized for very low forward voltage drop, with
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20ETS.
O-220
SS452
T0220AC
5S455
0D3D221
international rectifier NE 22
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IRF3205 equivalent
Abstract: No abstract text available
Text: PD - 9.1374A International IOR Rectifier IRFI3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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IRFI3205
0D2454T
IRF3205 equivalent
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F7422D
Abstract: No abstract text available
Text: PD - 9.1412H International IG R Rectifier IR F7422D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V qss = -20 V
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1412H
F7422D
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Untitled
Abstract: No abstract text available
Text: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an
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IRF7523D1
Rf7523d1
0D2B023
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Untitled
Abstract: No abstract text available
Text: PD - 9.1326B International IOR Rectifier IRL2505S PRELIM IN ARY HEXFET Power MOSFET • • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature
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1326B
IRL2505S
4A55452
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Untitled
Abstract: No abstract text available
Text: PD - 9.1238C International IOR Rectifier IRF7301 HEXFEf Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V d s s = 20V
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1238C
IRF7301
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Untitled
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Text: International po-smnt IO R Rectifier IR F 7 4 2 1 D 1 preliminary FETKY MOSFET andf Schottky Diode • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint
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554S2
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER b5E D • 4055452 0[]lfl:L73 ETT M I N R Data Sheet No. PD-6.014 INTERNATIONAL. RECTIFIER IO R IR 2110C HIGH VOLTAGE MOS GATE DRIVER General Description The IR2110C is the die form of the IR2110 refer to D ata S h e et No. PD-6.011B ; a high voltage, high speed
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2110C
IR2110C
IR2110
IR2110C
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Untitled
Abstract: No abstract text available
Text: PD - 9.1330C International IGR Rectifier IRF7413 HEXFEr Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V d s s = 30V ^D S o n = 0 . 0 1 1 Q
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1330C
IRF7413
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Untitled
Abstract: No abstract text available
Text: International [iORl DataSheetNo-PD_10260 Rectifier Series PVDZ1 Microelectronic Power IC Relay Single Pole, 1.4A 0-60V DC M O SFET PHOTOVOLTAIC RELAY GENERAL DESCRIPTION The International Rectifier Photovoltaic DC Relay PVDZ172 is a single-pole, normally open solid state replacement for
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PVDZ172
DDH4165
D0241flL>
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Text: Inte rna 11o na I c*»si»* no.p«.«»c l R Rectifier IR2 1 1 7 SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
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IR2117
5M-1982
284mm/
M0-047AC.
554S2
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier Prelim inary Data Sheet No. PD-6.107-G IR 2 1 3 3 / IR 2 1 3 5 IR 2 2 3 3 / IR 2 2 3 5 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage
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107-G
-20Vtifier
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irfp064n
Abstract: No abstract text available
Text: International ^Rectifier P D 9 .1 3 8 3 IRFP064N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 5 5 V
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IRFP064N
3150utram
MA55455
irfp064n
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Untitled
Abstract: No abstract text available
Text: International Hü Rectifier P D - 9.1222 IRFI1310G H E XFE T Power M O S F E T Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS CD Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature
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IRFI1310G
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i2192
Abstract: 20ETS12PBF 10ETS12 20ETS 20ETS12 AN-994 DIODE MARKING CODE 623
Text: Bulletin I2192 12/04 SAFEIR Series 20ETS12PbF INPUT RECTIFIER DIODE VF < 1V @ 10A Lead-Free "PbF" suffix IFSM = 300A VRRM = 1200V Description/ Features The 20ETS12PbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation
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I2192
20ETS12PbF
20ETS12PbF
filter20
O-220AC
10ETS12
20ETS
20ETS12
AN-994
DIODE MARKING CODE 623
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Untitled
Abstract: No abstract text available
Text: 4355455 0 0 2 7 b fll International I R Rectifier Data Sheet No. PD-6.032C IR2131 3 HIGH SIDE AND 3 LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage
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IR2131
IR2131
5M-1982
M0-047AC.
554S2
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD618052P/N SHD618052AP/N SHD618052BP/N TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4132, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-5 PACKAGE
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SHD618052P/N
SHD618052AP/N
SHD618052BP/N
1200-VOLT,
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Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD617112P/N SHD617112AP/N SHD617112BP/N TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4184, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-4 PACKAGE
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SHD617112P/N
SHD617112AP/N
SHD617112BP/N
1200-VOLT,
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S420D
Abstract: No abstract text available
Text: S420D Vishay Telefunken Ultra Fast Silicon Mesa SMD Rectifier Features D D D D Soft recovery characteristics Glass passivated junction Low reverse current Delivery on 12mm tape 15 811 Applications Fast rectifier Absolute Maximum Ratings Tj = 25_C Parameter
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S420D
D-74025
27-Sep-00
S420D
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Abstract: No abstract text available
Text: PD-91477D International IÖR Rectifier IRF3415 HEXFET Power MOSFET • • • • • Advanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 150 V R ü S o n = 0 . 0 4 2 Î 2
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PD-91477D
IRF3415
O-220
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