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Infineon Technologies AG IPB180N06S4H1ATMA2 MOSFET N-CH 60V 180A TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB180N06S4H1ATMA2	Cut Tape	7,667		1	1 $4.47 10 $2.958 100 $4.47 1000 $1.73002 10000 $1.73002	Buy Now
	IPB180N06S4H1ATMA2	Digi-Reel	7,667		1	1 $4.47 10 $2.958 100 $4.47 1000 $1.73002 10000 $1.73002	Buy Now
	IPB180N06S4H1ATMA2	Reel	7,000		1,000	1 - 10 - 100 - 1000 $1.642 10000 $1.642	Buy Now
Avnet Americas	IPB180N06S4H1ATMA2	Reel		53 Weeks, 1 Days	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Arrow Electronics	IPB180N06S4H1ATMA2		5,000	12 Weeks	1,000	1 - 10 - 100 - 1000 $1.3345 10000 $1.3345	Buy Now
Newark	IPB180N06S4H1ATMA2	Cut Tape	1,058		1	1 $4.36 10 $3.46 100 $2.48 1000 $1.96 10000 $1.96	Buy Now
Rochester Electronics	IPB180N06S4H1ATMA2		14		1	1 $1.82 10 $1.82 100 $1.71 1000 $1.55 10000 $1.55	Buy Now

Chip1Stop	IPB180N06S4H1ATMA2	Cut Tape	1,000			1 $3.45 10 $2.39 100 $2.02 1000 $1.87 10000 $1.87	Buy Now
EBV Elektronik	IPB180N06S4H1ATMA2			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IPB180N06S4H1ATMA2		3,680			1 - 10 $8.8186 100 $6.8274 1000 $6.8274 10000 $6.8274	Buy Now
Infineon Technologies AG IPB120N04S402ATMA1 MOSFET N-CH 40V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB120N04S402ATMA1	Cut Tape	3,032		1	1 $3.16 10 $2.055 100 $3.16 1000 $1.1585 10000 $1.1585	Buy Now
	IPB120N04S402ATMA1	Digi-Reel	3,032		1	1 $3.16 10 $2.055 100 $3.16 1000 $1.1585 10000 $1.1585	Buy Now
	IPB120N04S402ATMA1	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.07228 10000 $1.024	Buy Now
Avnet Americas	IPB120N04S402ATMA1	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Arrow Electronics	IPB120N04S402ATMA1		2,000	12 Weeks	1,000	1 - 10 - 100 - 1000 $0.9891 10000 $0.9509	Buy Now
	IPB120N04S402ATMA1	Cut Strips	452	12 Weeks	1	1 $1.425 10 $1.402 100 $1.357 1000 $1.334 10000 $1.334	Buy Now
Newark	IPB120N04S402ATMA1	Cut Tape	4,789		1	1 $2.29 10 $2.05 100 $1.8 1000 $1.47 10000 $1.47	Buy Now
Bristol Electronics	IPB120N04S402ATMA1		178			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Chip1Stop	IPB120N04S402ATMA1	Cut Tape	2,290			1 $1.11 10 $1.03 100 $0.952 1000 $0.952 10000 $0.952	Buy Now
EBV Elektronik	IPB120N04S402ATMA1			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IPB120N04S402ATMA1		53,600			1 - 10 - 100 $0.975 1000 $0.65 10000 $0.65	Buy Now
Infineon Technologies AG IPB120N04S401ATMA1 MOSFET N-CH 40V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB120N04S401ATMA1	Digi-Reel	1,813		1	1 $3.49 10 $2.279 100 $3.49 1000 $1.29852 10000 $1.29852	Buy Now
	IPB120N04S401ATMA1	Cut Tape	1,813		1	1 $3.49 10 $2.279 100 $3.49 1000 $1.29852 10000 $1.29852	Buy Now
	IPB120N04S401ATMA1	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.17212 10000 $1.17212	Buy Now
Avnet Americas	IPB120N04S401ATMA1	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	IPB120N04S401ATMA1		154			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IPB120N04S401ATMA1		64		1	1 $1.3 10 $1.3 100 $1.22 1000 $1.11 10000 $1.11	Buy Now
EBV Elektronik	IPB120N04S401ATMA1			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPB120N04S4L02ATMA1 MOSFET N-CH 40V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB120N04S4L02ATMA1	Digi-Reel	755		1	1 $3.16 10 $2.055 100 $3.16 1000 $1.1585 10000 $1.1585	Buy Now
	IPB120N04S4L02ATMA1	Cut Tape	755		1	1 $3.16 10 $2.055 100 $3.16 1000 $1.1585 10000 $1.1585	Buy Now
Mouser Electronics	IPB120N04S4L02ATMA1		2,107			1 $2.43 10 $1.79 100 $1.41 1000 $1.4 10000 $1.02	Buy Now
Rochester Electronics	IPB120N04S4L02ATMA1		1,413		1	1 $1.14 10 $1.14 100 $1.07 1000 $0.969 10000 $0.969	Buy Now
EBV Elektronik	IPB120N04S4L02ATMA1			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPB120N10S403ATMA1 MOSFET N-CH 100V 120A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB120N10S403ATMA1	Cut Tape	748		1	1 $4.68 10 $3.1 100 $4.68 1000 $1.82146 10000 $1.82146	Buy Now
	IPB120N10S403ATMA1	Digi-Reel	748		1	1 $4.68 10 $3.1 100 $4.68 1000 $1.82146 10000 $1.82146	Buy Now
Avnet Americas	IPB120N10S403ATMA1	Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPB120N10S403ATMA1		860			1 $3.73 10 $2.73 100 $2.01 1000 $1.74 10000 $1.74	Buy Now
Newark	IPB120N10S403ATMA1	Cut Tape	992		1	1 $5.32 10 $4.47 100 $3.62 1000 $2.76 10000 $2.76	Buy Now
EBV Elektronik	IPB120N10S403ATMA1			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IPB1 Datasheets (145)

Part	Manufacturer	Description	Datasheet Type	PDF
IPB100N04S2-04	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF
IPB100N04S204ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF
IPB100N04S204ATMA4	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF
IPB100N04S2L-03	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF
IPB100N04S2L03ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF
IPB100N04S2L03ATMA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF
IPB100N04S3-03	Infineon Technologies	Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 40.0 V; R_{DS (on)} (max) (@10V): 2.5 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.7 K/W;	Original	PDF
IPB100N04S303ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF
IPB100N04S4-H2	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2	Original	PDF
IPB100N04S4H2ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2	Original	PDF
IPB100N06S2-05	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 4.7 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF
IPB100N06S205ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF
IPB100N06S205ATMA4	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF
IPB100N06S2L-05	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 4.4 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF

IPB100N06S2L05ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF
IPB100N06S2L05ATMA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF
IPB100N06S3-03	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 3.0 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF
IPB100N06S3-03	Infineon Technologies	OptiMOS -T Power-Transistor	Original	PDF
IPB100N06S3-04	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 4.1 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.7 K/W;	Original	PDF
IPB100N06S3L-03	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 2.7 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF

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IPB1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PN04L03 Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 Text: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
120N06N Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	PDF	IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng
16cn10n Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1 Text: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)	Original	PDF	IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 PG-TO252-3 16cn10n 16cn10 D53A PG-TO220-3 16CN1
IPB120N06N Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature	Original	PDF	IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94
14N03LA Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA Text: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	PDF	IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4156 14N03LA 14N03LA 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA
147N12N Abstract: No abstract text available Text: IPB144N12N3 G IPI147N12N3 G OptiMOSTM3 Power-Transistor IPP147N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 14.7 mΩ ID 56 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPB144N12N3 IPI147N12N3 IPP147N12N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 144N12N 147N12N
107n20n Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3 Text: IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)	Original	PDF	IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n 110N20N IPP110N20N3 G DSV80 D88 z IPI110N20N3 G IEC61249-2-21 PG-TO220-3
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10
4N06H1 Abstract: IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode Text: IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 1.7 mΩ ID 180 A Features PG-TO263-7-3 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)	Original	PDF	IPB180N06S4-H1 PG-TO263-7-3 4N06H1 4N06H1 IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode
10n03l Abstract: smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD Text: IPP10N03L IPB10N03L OptiMOS Buck converter series Product Summary Feature • N-Channel VDS 30 V • Logic Level RDS on max. SMD version 8.9 mΩ • Low On-Resistance RDS(on) ID 73 A • Excellent Gate Charge x RDS(on) product (FOM) P- TO263 -3-2 P- TO220 -3-1	Original	PDF	IPP10N03L IPB10N03L Q67042-S4040 10N03L Q67040-S4346 10n03l smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD
15n03l Abstract: 15N03 IPB15N03L ANPS071E IPP15N03L F42A Text: IPP15N03L IPB15N03L OptiMOS Buck converter series Product Summary Feature 30 • N-Channel VDS • Logic Level RDS on max. SMD version • Low On-Resistance RDS(on) ID • Excellent Gate Charge x RDS(on) product (FOM) P- TO263 -3-2 V 12.6 mΩ 42 A P- TO220 -3-1	Original	PDF	IPP15N03L IPB15N03L Q67042-S4039 15N03L Q67040-S4344 15n03l 15N03 IPB15N03L ANPS071E IPP15N03L F42A
3QN0402 Abstract: PG-TO263-7-3 IPB180N04S3-02 ipb180n04 Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB180N04S3-02 Product Summary V DS 40 V R DS on 1.6 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB180N04S3-02 PG-TO263-7-3 3QN0402 14300pF 3900pF 710pF 245nC 210nC 3QN0402 PG-TO263-7-3 IPB180N04S3-02 ipb180n04
marking D78 Abstract: smd diode marking 78A Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature	Original	PDF	IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 marking D78 smd diode marking 78A
A1502 Abstract: smd diode code GS Q67065-A7009 SMD CODE G13 Text: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID	Original	PDF	IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13

16CNE8N Abstract: IPP16CNE8N Text: OptiMOS 2 Power-Transistor IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)	Original	PDF	IPB16CNE8N IPI16CNE8N IPD16CNE8N IPP16CNE8N PG-TO263-3 16CNE8N 16CNE8N
4N04H1 Abstract: IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking Text: IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on 1.6 mW ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)	Original	PDF	IPB160N04S4-H1 PG-TO263-7-3 4N04H1 4N04H1 IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking
12CN10N Abstract: No abstract text available Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N
4N06H1 Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 Text: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow	Original	PDF	IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06H1 IPI120N06S4-H1 4N06H1 IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2
3PN0604 Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2 Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow	Original	PDF	IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
marking eb5 Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features 0 V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 R , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC J +&. Y" ,- I9 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &	Original	PDF	IPP139N08N3 IPI139N08N3 IPB136N08N3 65AE5 marking eb5 diode marking eb5 EB5 MARKING marking G9 i95B
IPP17N25S3-100 Abstract: No abstract text available Text: IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary VDS 250 V RDS on ,max 100 mW ID 17 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB17N25S3-100 IPP17N25S3-100 PG-TO263-3-2 PG-TO220-3-1 3N25100 IPP17N25S3-100
107n20n Abstract: No abstract text available Text: IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A	Original	PDF	IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n
marking 6d Abstract: IPP147N12N Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! ' V ;I )*( K R - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#	Original	PDF	IPB144N12N3 IPI147N12N3 IPP147N12N3 marking 6d IPP147N12N
B581C Abstract: No abstract text available Text: DATA SHEET_ BIPOLAR DIGITAL INTEGRATED CIRCUIT ¿xPB1508GV 3 GHz INPUT DIVIDE BY 2 PRESCALER IC FOR DBS TUNERS /¿PB1508GV is a 3.0 GHz input divide by 2 prescaler IC for DBS tuner applications. ¿¿PB1508GV can make VHF/UHF band PLL frequency synthesizer apply to DBS/ECS tuners. /iPB1508G V is a shrink package version of	OCR Scan	PDF	uPB1508GV PB1508GV /iPB1508G PB584G B581C

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Infineon Technologies AG IPB180N06S4H1ATMA2

Infineon Technologies AG IPB120N04S402ATMA1

Infineon Technologies AG IPB120N04S401ATMA1

Infineon Technologies AG IPB120N04S4L02ATMA1

Infineon Technologies AG IPB120N10S403ATMA1

IPB1 Datasheets (145)

IPB1 Datasheets Context Search

PN04L03

120N06N

16cn10n

IPB120N06N

14N03LA

147N12N

107n20n

12CN10N

4N06H1

10n03l

15n03l

3QN0402

marking D78

A1502

16CNE8N

4N04H1

12CN10N

4N06H1

3PN0604

marking eb5

IPP17N25S3-100

107n20n

marking 6d

B581C