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    IPB100 Price and Stock

    Infineon Technologies AG IPB100N04S4H2ATMA1

    MOSFET N-CH 40V 100A TO263-3
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    DigiKey IPB100N04S4H2ATMA1 Cut Tape 4,996 1
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    IPB100N04S4H2ATMA1 Reel 4,000 1,000
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    Avnet Americas IPB100N04S4H2ATMA1 Reel 12 Weeks 1,000
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    Mouser Electronics IPB100N04S4H2ATMA1 1,970
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    Verical IPB100N04S4H2ATMA1 6,000 1,000
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    IPB100N04S4H2ATMA1 1,900 341
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    Arrow Electronics IPB100N04S4H2ATMA1 6,000 12 Weeks 1,000
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    Rochester Electronics IPB100N04S4H2ATMA1 3,400 1
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    Infineon Technologies AG IPB100N12S305ATMA1

    MOSFET N-CH 120V 100A TO263-3
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    DigiKey IPB100N12S305ATMA1 Digi-Reel 3,892 1
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    Mouser Electronics IPB100N12S305ATMA1 967
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    Infineon Technologies AG IPB100N10S305ATMA1

    MOSFET N-CH 100V 100A TO263-3
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    DigiKey IPB100N10S305ATMA1 Cut Tape 1,392 1
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    Infineon Technologies AG IPB100N04S204ATMA4

    MOSFET N-CH 40V 100A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPB100N04S204ATMA4 Cut Tape 984 1
    • 1 $4.19
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    IPB100N04S204ATMA4 Digi-Reel 984 1
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    Rochester Electronics IPB100N04S204ATMA4 15,499 1
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    Rochester Electronics LLC IPB100N08S207ATMA1

    OPTLMOS N-CHANNEL POWER MOSFET
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    DigiKey IPB100N08S207ATMA1 Bulk 132
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    IPB100 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB100N04S2-04 Infineon Technologies OptiMOS Power-Transistor Original PDF
    IPB100N04S204ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF
    IPB100N04S204ATMA4 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF
    IPB100N04S2L-03 Infineon Technologies OptiMOS Power-Transistor Original PDF
    IPB100N04S2L03ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF
    IPB100N04S2L03ATMA2 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF
    IPB100N04S3-03 Infineon Technologies Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.5 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; Original PDF
    IPB100N04S303ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF
    IPB100N04S4-H2 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2 Original PDF
    IPB100N04S4H2ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2 Original PDF
    IPB100N06S2-05 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF
    IPB100N06S205ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF
    IPB100N06S205ATMA4 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF
    IPB100N06S2L-05 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.4 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF
    IPB100N06S2L05ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF
    IPB100N06S2L05ATMA2 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF
    IPB100N06S3-03 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.0 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF
    IPB100N06S3-03 Infineon Technologies OptiMOS -T Power-Transistor Original PDF
    IPB100N06S3-04 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.1 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; Original PDF
    IPB100N06S3L-03 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 2.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF

    IPB100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PN04L03

    Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
    Text: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    PDF IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42

    A1502

    Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
    Text: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID


    Original
    PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13

    3PN0604

    Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original
    PDF IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2

    3pn06l03

    Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
    Text: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original
    PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87978 3pn06l03 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13

    3pn1005

    Abstract: IPP100N10S3-05 IPB100N10S3-05 IPI100N10S3-05 ANPS071E PG-TO263-3-2 DSV80
    Text: IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 4.8 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original
    PDF IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN1005 IPI100N10S3-05 3pn1005 IPP100N10S3-05 IPB100N10S3-05 IPI100N10S3-05 ANPS071E PG-TO263-3-2 DSV80

    4N04H2

    Abstract: diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02
    Text: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 2.4 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original
    PDF IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N04S4-02 4N04H2 IPI100N04S4-02 4N04H2 diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02

    3pn06l03

    Abstract: ANPS071E IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 D1053
    Text: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original
    PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN06L03 IPI100N06S3L-03 3pn06l03 ANPS071E IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 D1053

    PN06L05

    Abstract: PN06L IPP100N06S2L-05 SP000219003 SP0002-18879 ANPS071E IPB100N06S2L-05 PG-TO263-3-2 SP0002-19003
    Text: IPB100N06S2L-05 IPP100N06S2L-05 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.4 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    PDF IPB100N06S2L-05 IPP100N06S2L-05 PG-TO263-3-2 PG-TO220-3-1 SP0002-19003 PN06L05 PN06L05 PN06L IPP100N06S2L-05 SP000219003 SP0002-18879 ANPS071E IPB100N06S2L-05 PG-TO263-3-2 SP0002-19003

    3pn0403

    Abstract: IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E
    Text: IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 2.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original
    PDF IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3pn0403 IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E

    3PN06L04

    Abstract: IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd
    Text: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original
    PDF IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN06L04 IPI100N06S3L-04 3PN06L04 IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd

    PN08L07

    Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
    Text: IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    PDF IPB100N08S2L-07 IPP100N08S2L-07 PG-TO263-3-2 PG-TO220-3-1 SP0002-19053 PN08L07 PN08L07 Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07

    PN0404

    Abstract: IPB100N04S2-04 ANPS071E marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag TRANSISTOR SMD MARKING CODE t 04 IPP100N04S2-04 PG-TO263-3-2 SP0002-19056
    Text: IPB100N04S2-04 IPP100N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.3 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    PDF IPB100N04S2-04 IPP100N04S2-04 PG-TO263-3-2 PG-TO220-3-1 SP0002-19061 PN0404 PN0404 IPB100N04S2-04 ANPS071E marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag TRANSISTOR SMD MARKING CODE t 04 IPP100N04S2-04 PG-TO263-3-2 SP0002-19056

    3pn06l03

    Abstract: ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING
    Text: Target data sheet IPI100N06S3L-03 IPP100N06S3L-03,IPB100N06S3L-03 OptiMOS-T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 2.7 mΩ ID 100 A P- TO262 -3-1


    Original
    PDF IPI100N06S3L-03 IPP100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 3PN06L03 BIPP100N06S3L-03, 3pn06l03 ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING

    3PN0604

    Abstract: ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original
    PDF IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0604 IPI100N06S3-04 3PN0604 ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2

    A SMD CODE MARKING

    Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
    Text: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow


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    PDF IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87982 A SMD CODE MARKING IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603

    3PN0403

    Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
    Text: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


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    PDF IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3PN0403 IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898

    IPP100N04S4-H2

    Abstract: IPB100N04S4-H2 IPI100N04S4-H2 4N04H2 MJ-39
    Text: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.4 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


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    PDF IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI100N04S4-H2 IPP100N04S4-H2 4N04H2 MJ-39

    IPB100P03P3L-04

    Abstract: 864V 3P03L04 optimos battery protection reverse IPI100P03P3L-04 IPP100P03P3L-04 PG-TO263-3-2
    Text: IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 OptiMOS -P Trench Power-Transistor Product Summary V DS Features -30 R DS on ,max (SMD version) • P-channel - Logic Level - Enhancement mode 4 ID • Automotive AEC Q101 qualified V mΩ -100 A • MSL1 up to 260°C peak reflow


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    PDF IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3P03L04 IPI100P03P3L-04 IPB100P03P3L-04 864V 3P03L04 optimos battery protection reverse IPI100P03P3L-04 IPP100P03P3L-04 PG-TO263-3-2

    3PN06L04

    Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
    Text: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow


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    PDF IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02219 3PN06L04 3PN06L04 SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2

    PN0807

    Abstract: IPB100N08S2-07 IPI100N08S2-07 IPP100N08S2-07 PG-TO263-3-2 SP0002-19044 c25 diode
    Text: IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    PDF IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-19044 PN0807 PN0807 IPB100N08S2-07 IPI100N08S2-07 IPP100N08S2-07 PG-TO263-3-2 SP0002-19044 c25 diode

    3PN0603

    Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
    Text: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V


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    PDF IPI100N06S3-03 IPP100N06S3-03 IPB100N06S3-03 IPP100N06S3-03 3PN0603 BIPP100N06S3-03, 3PN0603 INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. ;iPB100484 4,096 X 4-Bit 100K ECL RAM Description Pin Configurations The /tPB100484 is a very high-speed 100K interface ECL RAM organized as 4,096 words by 4 bits with openemitter outputs noninverted . It is available in 28-pin cerdip or flatpack packages.


    OCR Scan
    PDF iPB100484 /tPB100484 28-pin 28-Pin juPB100484D-10 JIPB100484B-10 mPB100484 83IH-5948B pPB100484

    IH-5972B

    Abstract: No abstract text available
    Text: /XPB100422 256 X 4-Bit 100K ECL RAM J C /W NEC Electronics Inc. Description Pin Configurations The /iPB100422 is a very high-speed 100K interface ECL RAM organized as 256 words by 4 bits and designed with noninverted, open-emitter outputs and low power con­


    OCR Scan
    PDF uPB100422 256x4-Bit /iPB100422 24-pin 256-word 400-mil, pPB100422 IH-5972B

    Untitled

    Abstract: No abstract text available
    Text: /tPB100A484 4,096 X 4-Bit 100K ECL RAM W M li W NEC Electronics Inc. Description Pin Configurations The /iPB100A484 is a very high-speed 100K interface ECL RAM organized as 4K words by 4 bits and designed with open emitter outputs noninverted . It is available in


    OCR Scan
    PDF uPB100A484 /iPB100A484 28-pin 26-pin MPB100A484 S3IH-5943B H-5949B fiPB100A484