IPB100 Search Results
IPB100 Price and Stock
Infineon Technologies AG IPB100N04S4H2ATMA1MOSFET N-CH 40V 100A TO263-3 |
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IPB100N04S4H2ATMA1 | Cut Tape | 4,996 | 1 |
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IPB100N04S4H2ATMA1 | Reel | 12 Weeks | 1,000 |
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IPB100N04S4H2ATMA1 | 1,970 |
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IPB100N04S4H2ATMA1 | 6,000 | 1,000 |
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IPB100N04S4H2ATMA1 | 6,000 | 12 Weeks | 1,000 |
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IPB100N04S4H2ATMA1 | Cut Tape | 826 | 1 |
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IPB100N04S4H2ATMA1 | 3,400 | 1 |
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IPB100N04S4H2ATMA1 | 2,965 |
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IPB100N04S4H2ATMA1 | Cut Tape | 1,000 |
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IPB100N04S4H2ATMA1 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPB100N12S305ATMA1MOSFET N-CH 120V 100A TO263-3 |
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IPB100N12S305ATMA1 | Digi-Reel | 3,892 | 1 |
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IPB100N12S305ATMA1 | 967 |
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IPB100N12S305ATMA1 | Cut Tape | 242 | 1 |
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IPB100N12S305ATMA1 | 2,007 | 1 |
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IPB100N12S305ATMA1 | Cut Tape | 648 |
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Infineon Technologies AG IPB100N10S305ATMA1MOSFET N-CH 100V 100A TO263-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB100N10S305ATMA1 | Cut Tape | 1,392 | 1 |
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IPB100N10S305ATMA1 | 970 | 115 |
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IPB100N10S305ATMA1 | Cut Strips | 1,000 | 12 Weeks | 1 |
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IPB100N10S305ATMA1 | 2,154 | 1 |
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IPB100N10S305ATMA1 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPB100N04S204ATMA4MOSFET N-CH 40V 100A TO263-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB100N04S204ATMA4 | Cut Tape | 984 | 1 |
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IPB100N04S204ATMA4 | Reel | 12 Weeks | 1,000 |
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IPB100N04S204ATMA4 |
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IPB100N04S204ATMA4 | 15,499 | 1 |
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IPB100N04S204ATMA4 | 13 Weeks | 1,000 |
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Rochester Electronics LLC IPB100N08S207ATMA1OPTLMOS N-CHANNEL POWER MOSFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB100N08S207ATMA1 | Bulk | 132 |
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IPB100 Datasheets (30)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB100N04S2-04 |
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OptiMOS Power-Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S204ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S204ATMA4 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S2L-03 |
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OptiMOS Power-Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S2L03ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S2L03ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S3-03 |
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Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.5 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S303ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S4-H2 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S4H2ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S2-05 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S205ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S205ATMA4 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S2L-05 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.4 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB100N06S2L05ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S2L05ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S3-03 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.0 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S3-03 |
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OptiMOS -T Power-Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S3-04 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.1 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N06S3L-03 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 2.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original |
IPB100 Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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PN04L03
Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
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IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 | |
A1502
Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
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IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13 | |
3PN0604
Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
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IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2 | |
3pn06l03
Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
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IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87978 3pn06l03 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13 | |
3pn1005
Abstract: IPP100N10S3-05 IPB100N10S3-05 IPI100N10S3-05 ANPS071E PG-TO263-3-2 DSV80
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IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN1005 IPI100N10S3-05 3pn1005 IPP100N10S3-05 IPB100N10S3-05 IPI100N10S3-05 ANPS071E PG-TO263-3-2 DSV80 | |
4N04H2
Abstract: diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02
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IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N04S4-02 4N04H2 IPI100N04S4-02 4N04H2 diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02 | |
3pn06l03
Abstract: ANPS071E IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 D1053
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IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN06L03 IPI100N06S3L-03 3pn06l03 ANPS071E IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 D1053 | |
PN06L05
Abstract: PN06L IPP100N06S2L-05 SP000219003 SP0002-18879 ANPS071E IPB100N06S2L-05 PG-TO263-3-2 SP0002-19003
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IPB100N06S2L-05 IPP100N06S2L-05 PG-TO263-3-2 PG-TO220-3-1 SP0002-19003 PN06L05 PN06L05 PN06L IPP100N06S2L-05 SP000219003 SP0002-18879 ANPS071E IPB100N06S2L-05 PG-TO263-3-2 SP0002-19003 | |
3pn0403
Abstract: IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E
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IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3pn0403 IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E | |
3PN06L04
Abstract: IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd
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IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN06L04 IPI100N06S3L-04 3PN06L04 IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd | |
PN08L07
Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
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IPB100N08S2L-07 IPP100N08S2L-07 PG-TO263-3-2 PG-TO220-3-1 SP0002-19053 PN08L07 PN08L07 Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07 | |
PN0404
Abstract: IPB100N04S2-04 ANPS071E marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag TRANSISTOR SMD MARKING CODE t 04 IPP100N04S2-04 PG-TO263-3-2 SP0002-19056
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IPB100N04S2-04 IPP100N04S2-04 PG-TO263-3-2 PG-TO220-3-1 SP0002-19061 PN0404 PN0404 IPB100N04S2-04 ANPS071E marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag TRANSISTOR SMD MARKING CODE t 04 IPP100N04S2-04 PG-TO263-3-2 SP0002-19056 | |
3pn06l03
Abstract: ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING
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IPI100N06S3L-03 IPP100N06S3L-03 IPB100N06S3L-03 IPP100N06S3L-03 3PN06L03 BIPP100N06S3L-03, 3pn06l03 ANPS071E smd diode marking 78A 3pn06 INFINEON PART MARKING to263 K TRANSISTOR SMD MARKING CODE INFINEON smd PART MARKING OPTIMOS TRANSISTOR BIPP100N06S3L-03 INFINEON PART MARKING | |
3PN0604
Abstract: ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
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IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0604 IPI100N06S3-04 3PN0604 ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2 | |
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A SMD CODE MARKING
Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
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IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87982 A SMD CODE MARKING IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603 | |
3PN0403
Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
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IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0403 IPI100N04S3-03 3PN0403 IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898 | |
IPP100N04S4-H2
Abstract: IPB100N04S4-H2 IPI100N04S4-H2 4N04H2 MJ-39
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IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI100N04S4-H2 IPP100N04S4-H2 4N04H2 MJ-39 | |
IPB100P03P3L-04
Abstract: 864V 3P03L04 optimos battery protection reverse IPI100P03P3L-04 IPP100P03P3L-04 PG-TO263-3-2
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IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3P03L04 IPI100P03P3L-04 IPB100P03P3L-04 864V 3P03L04 optimos battery protection reverse IPI100P03P3L-04 IPP100P03P3L-04 PG-TO263-3-2 | |
3PN06L04
Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
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IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02219 3PN06L04 3PN06L04 SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 | |
PN0807
Abstract: IPB100N08S2-07 IPI100N08S2-07 IPP100N08S2-07 PG-TO263-3-2 SP0002-19044 c25 diode
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IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-19044 PN0807 PN0807 IPB100N08S2-07 IPI100N08S2-07 IPP100N08S2-07 PG-TO263-3-2 SP0002-19044 c25 diode | |
3PN0603
Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
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IPI100N06S3-03 IPP100N06S3-03 IPB100N06S3-03 IPP100N06S3-03 3PN0603 BIPP100N06S3-03, 3PN0603 INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 | |
Untitled
Abstract: No abstract text available
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OCR Scan |
iPB100484 /tPB100484 28-pin 28-Pin juPB100484D-10 JIPB100484B-10 mPB100484 83IH-5948B pPB100484 | |
IH-5972B
Abstract: No abstract text available
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OCR Scan |
uPB100422 256x4-Bit /iPB100422 24-pin 256-word 400-mil, pPB100422 IH-5972B | |
Untitled
Abstract: No abstract text available
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OCR Scan |
uPB100A484 /iPB100A484 28-pin 26-pin MPB100A484 S3IH-5943B H-5949B fiPB100A484 |