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ILME UK Ltd MAPN 06 L32 Enclosure: for HDC connectors; LS-TYPE; size 44.27; high; M32
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TME	MAPN 06 L32				10	1 - 10 $19.38 100 $17.25 1000 $17.25 10000 $17.25	Get Quote
Infineon Technologies AG 3PN06L03 Electronic Component
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ComSIT USA	3PN06L03		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG 3PN06L04 Electronic Component
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ComSIT USA	3PN06L04		13			1 - 10 - 100 - 1000 - 10000 -	Get Quote

PN06L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PN06L06 Abstract: No abstract text available Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPD50N06S3L-06 PG-TO252-3-11 PN06L06 PN06L06	PDF
PN06L13 Abstract: Application Note ANPS071E PG-TO252-3-11 Diode d29 08 ANPS071E IPD50N06S3L-13 Text: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPD50N06S3L-13 PG-TO252-3-11 PN06L13 PN06L13 Application Note ANPS071E PG-TO252-3-11 Diode d29 08 ANPS071E IPD50N06S3L-13	PDF
PN06L13 Abstract: No abstract text available Text: SPD50N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID Logic Level V m 12.7 50 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421	Original	SPD50N06S2L-13 SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, PN06L13	PDF
PN06L13 Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13 Text: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421	Original	SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, SPD50N06S2L-13 PN06L13 ANPS071E BSPD50N06S2L-13	PDF
PN06L05 Abstract: ANPS071E SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043 Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 55 V 4.4 mΩ 100 A P- TO220 -3-1 • Avalanche rated	Original	SPP100N06S2L-05 SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043 SPB100N06S2L-05 Q67060-S6042 PN06L05 BSPP100N06S2L-05 BSPB100N06S2L-05, PN06L05 ANPS071E Q67060-S6043	PDF
PN06L13 Abstract: SMD MARKING "68A" BSPD50N06S2L-13 P-TO252 SPD50N06S2L-13 S7421 Text: SPD50N06S2L-13 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 55 VDS RDS on ID V m 12.7 50 A P-TO252 Type Package Ordering Code	Original	SPD50N06S2L-13 P-TO252 Q67060- S7421 PN06L13 BSPD50N06S2L-13, SPD50N06S2L-13 PN06L13 SMD MARKING "68A" BSPD50N06S2L-13 P-TO252 S7421	PDF
PN06L13 Abstract: PN06L 34Dg ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13 S7421 Text: SPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • Logic Level V 12.7 mΩ 50 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421	Original	SPD50N06S2L-13 Q67060- S7421 PN06L13 BSPD50N06S2L-13, SPD50N06S2L-13 PN06L13 PN06L 34Dg ANPS071E BSPD50N06S2L-13 S7421	PDF
PN06L13 Abstract: IPD50N06S2L-13 ANPS071E PG-TO252-3-11 Text: IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V DS • N-channel Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID V 12.7 mΩ 50 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPD50N06S2L-13 PG-TO252-3-11 PN06L13 PN06L13 IPD50N06S2L-13 ANPS071E PG-TO252-3-11	PDF
PN06L05 Abstract: PN06L IPP100N06S2L-05 SP000219003 SP0002-18879 ANPS071E IPB100N06S2L-05 PG-TO263-3-2 SP0002-19003 Text: IPB100N06S2L-05 IPP100N06S2L-05 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.4 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPB100N06S2L-05 IPP100N06S2L-05 PG-TO263-3-2 PG-TO220-3-1 SP0002-19003 PN06L05 PN06L05 PN06L IPP100N06S2L-05 SP000219003 SP0002-18879 ANPS071E IPB100N06S2L-05 PG-TO263-3-2 SP0002-19003	PDF
26072 Abstract: pn06 Text: IPD90N06S3L-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.1 mΩ ID 90 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPD90N06S3L-07 PG-TO252-3-11 PN06L07 26072 pn06	PDF
PN06L Abstract: Marking g51 PN06L07 Text: IPD90N06S3L-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.1 mΩ ID 90 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPD90N06S3L-07 PG-TO252-3-11 PN06L07 PN06L Marking g51 PN06L07	PDF
PN06L13 Abstract: PN06L IPD50N06S3L-13 Text: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPD50N06S3L-13 PG-TO252-3-11 PN06L13 68-1ems PN06L13 PN06L IPD50N06S3L-13	PDF
PG-TO252-3 Abstract: No abstract text available Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPD50N06S3L-08 PG-TO252-3-11 PN06L08 PG-TO252-3	PDF
pn06l05 Abstract: SPB100N06S2L-05 pn06 BSPP100N06S2L-05 ANPS071E SPP100N06S2L-05 Q67060-S6043 PN06L AS160 Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.4 mΩ • Logic Level ID 100 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated	Original	SPP100N06S2L-05 SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043 PN06L05 SPB100N06S2L-05 Q67060-S6042 BSPP100N06S2L-05 BSPB100N06S2L-05, pn06l05 pn06 ANPS071E Q67060-S6043 PN06L AS160	PDF

pn06l05 Abstract: marking code br 37 SMD Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel RDS on Enhancement mode max. SMD version ID Logic Level P- TO263 -3-2 175°C operating temperature V 4.4 m 100 A P- TO220 -3-1 Avalanche rated dv/dt rated	Original	SPP100N06S2L-05 SPB100N06S2L-05 Q67060-S6043 Q67060-S6042 PN06L05 BSPP100N06S2L-05 BSPB100N06S2L-05, marking code br 37 SMD	PDF
pn06l05 Abstract: SPB100N06S2L-05 SPB100N06S2L05 SPP100N06S2L-05 Q67060-S6042 Text: SPP100N06S2L-05 SPB100N06S2L-05 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated Type Package VDS 55 RDS on max. SMD version 4.4	Original	SPP100N06S2L-05 SPB100N06S2L-05 P-TO263-3-2 P-TO220-3-1 SPP100N06S2L-05 Q67060-S6043 PN06L05 SPB100N06S2L-05 pn06l05 SPB100N06S2L05 Q67060-S6042	PDF
Untitled Abstract: No abstract text available Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	IPD50N06S3L-08 PG-TO252-3-11 PN06L08	PDF