IPD12 Search Results

IPD12 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TIPD128		Texas Instruments	Capacitive Load Drive Verified Reference Design Using an Isolation Resistor

IPD12 Price and Stock

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Infineon Technologies AG IPD122N10N3GATMA1 MOSFET N-CH 100V 59A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD122N10N3GATMA1	Reel	40,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.60712	Buy Now
	IPD122N10N3GATMA1	Cut Tape	3,343		1	1 $2.15 10 $1.376 100 $0.9352 1000 $0.68517 10000 $0.68517	Buy Now
Avnet Americas	IPD122N10N3GATMA1	Reel	22,500	18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD122N10N3GATMA1		35,805			1 $1.33 10 $1.05 100 $0.86 1000 $0.664 10000 $0.607	Buy Now
Verical	IPD122N10N3GATMA1		7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.5589	Buy Now
	IPD122N10N3GATMA1		1,996		41	1 - 10 - 100 $0.6063 1000 $0.515 10000 $0.515	Buy Now
	IPD122N10N3GATMA1		1,946		13	1 - 10 - 100 $0.6348 1000 $0.5043 10000 $0.5043	Buy Now
Newark	IPD122N10N3GATMA1	Cut Tape	15,275		1	1 $1.19 10 $0.926 100 $0.878 1000 $0.685 10000 $0.685	Buy Now
	IPD122N10N3GATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.58	Buy Now

Bristol Electronics	IPD122N10N3GATMA1		99			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	IPD122N10N3GATMA1		7,500			1 - 10 - 100 - 1000 - 10000 $0.523	Buy Now
	IPD122N10N3GATMA1	Cut Tape	1,996			1 $0.925 10 $0.619 100 $0.485 1000 $0.412 10000 $0.412	Buy Now
	IPD122N10N3GATMA1		1,946			1 $0.7688 10 $0.6895 100 $0.6348 1000 $0.5043 10000 $0.5043	Buy Now
EBV Elektronik	IPD122N10N3GATMA1			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc IPD1-20-D-K CONN RCPT HSG 40POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD1-20-D-K	Bulk	7,304		1	1 $2.13 10 $1.626 100 $1.2552 1000 $1.175 10000 $1.175	Buy Now
Avnet Americas	IPD1-20-D-K	Bulk	24	11 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD1-20-D-K		2,802			1 $1.57 10 $1.28 100 $1.13 1000 $1.03 10000 $1.03	Buy Now
Verical	IPD1-20-D-K		1,075		50	1 - 10 - 100 $2.08 1000 $1.417 10000 $1.417	Buy Now
	IPD1-20-D-K		612		12	1 - 10 - 100 $1.0577 1000 $0.8092 10000 $0.7183	Buy Now
Newark	IPD1-20-D-K	Bulk	51		1	1 $1.64 10 $1.48 100 $1.26 1000 $0.906 10000 $0.788	Buy Now

Chip1Stop	IPD1-20-D-K		612			1 $1.0577 10 $1.0577 100 $1.0577 1000 $0.9128 10000 $0.9128	Buy Now
Infineon Technologies AG IPD12CN10NGATMA1 MOSFET N-CH 100V 67A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD12CN10NGATMA1	Cut Tape	4,637		1	1 $2.32 10 $1.491 100 $1.0177 1000 $0.74933 10000 $0.74933	Buy Now
	IPD12CN10NGATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.67512	Buy Now
Mouser Electronics	IPD12CN10NGATMA1		1,190			1 $1.57 10 $1.32 100 $1.01 1000 $0.758 10000 $0.675	Buy Now
Verical	IPD12CN10NGATMA1		65,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.6718	Buy Now
	IPD12CN10NGATMA1		10,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.942	Buy Now
	IPD12CN10NGATMA1		2,485		23	1 - 10 - 100 $1.375 1000 $1.375 10000 $1.375	Buy Now
	IPD12CN10NGATMA1		310		7	1 - 10 $1.046 100 $0.9071 1000 $0.8626 10000 $0.8626	Buy Now
Newark	IPD12CN10NGATMA1	Cut Tape	4,308		1	1 $2.35 10 $1.97 100 $1.59 1000 $1.19 10000 $1.19	Buy Now
TME	IPD12CN10NGATMA1		2,143		1	1 $1.56 10 $1.34 100 $1.05 1000 $0.96 10000 $0.96	Buy Now

Chip1Stop	IPD12CN10NGATMA1		65,000			1 - 10 - 100 - 1000 - 10000 $0.6718	Buy Now
	IPD12CN10NGATMA1	Cut Tape	2,485			1 $1.12 10 $1.11 100 $1.11 1000 $1.1 10000 $1.1	Buy Now
	IPD12CN10NGATMA1		310			1 $1.31 10 $1.046 100 $0.9071 1000 $0.899 10000 $0.899	Buy Now
EBV Elektronik	IPD12CN10NGATMA1			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc IPD1-20-D CONN RCPT HSG 40POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD1-20-D	Bulk	435		1	1 $2.13 10 $1.626 100 $1.2552 1000 $1.175 10000 $1.175	Buy Now
Mouser Electronics	IPD1-20-D		373			1 $2.56 10 $2.08 100 $1.8 1000 $1.34 10000 $1.25	Buy Now
Verical	IPD1-20-D		1,375		25	1 - 10 - 100 $2.574 1000 $1.807 10000 $1.807	Buy Now
Newark	IPD1-20-D	Bulk			1	1 $1.64 10 $1.48 100 $1.26 1000 $0.906 10000 $0.788	Buy Now
Samtec Inc IPD1-25-D-K-M CONN RCPT HSG 50POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD1-25-D-K-M	Tube	359		1	1 $5.78 10 $5.78 100 $3.425 1000 $3.425 10000 $3.425	Buy Now
Mouser Electronics	IPD1-25-D-K-M		69			1 $5.78 10 $5.78 100 $4.24 1000 $2.6 10000 $2.35	Buy Now
Powell Electronics	IPD1-25-D-K-M		26		1	1 $5.78 10 $5.78 100 $3.08 1000 $2.72 10000 $2.72	Buy Now
Master Electronics	IPD1-25-D-K-M					1 - 10 $5.4 100 $4.66 1000 $2.78 10000 $2.29	Buy Now
Sager	IPD1-25-D-K-M		40		1	1 $5.78 10 $5.78 100 $3.08 1000 $2.6 10000 $2.6	Buy Now

Find more IPD12 price and stock on Findchips.com

IPD12 Datasheets (36)

Part	Manufacturer	Description	Type	PDF
IPD12000	Net to Net Technologies	DSLAM Stackable DC 14 slot	Original	PDF
IPD1-20-D	Samtec	Rectangular Connectors - Housings, Connectors, Interconnects, CONN RECEPT .100" 40POS	Original	PDF
IPD1-20-D-K	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONN	Original	PDF
IPD1-20-D-K-M	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONNECTOR	Original	PDF
IPD122N10N3 G	Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); V_DS (max): 100.0 V; R_{DS (on)} (max) (@10V): 12.2 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 59.0 A;	Original	PDF
IPD122N10N3GATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 59A	Original	PDF
IPD122N10N3GBTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 59A TO252-3	Original	PDF
IPD1-25-D	Samtec	Rectangular Connectors - Housings, Connectors, Interconnects, CONN HOUSING 50 POS 2.54MM ST	Original	PDF
IPD1-25-D-K	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONN	Original	PDF
IPD127N06LG	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF
IPD127N06LG	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A TO-252	Original	PDF
IPD127N06LGBTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 50A TO-252	Original	PDF
IPD12-C10B	Innovative Processing AG	10 GHz PIN Diode Chip	Original	PDF
IPD12-C10N	Innovative Processing AG	10 GHz PIN Diode Chip	Original	PDF

IPD12-C10X	Innovative Processing AG	PIN Diode	Original	PDF
IPD12-C15B	Innovative Processing AG	15 GHz PIN Diode Chip	Original	PDF
IPD12-C15X	Innovative Processing AG	PIN Diode	Original	PDF
IPD12-C20B	Innovative Processing AG	20 GHz PIN Diode Chip	Original	PDF
IPD12-C20N	Innovative Processing AG	20 GHz PIN Diode Chip	Original	PDF
IPD12-C20X	Innovative Processing AG	PIN Diode	Original	PDF

IPD12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10
12N03L Abstract: No abstract text available Text: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	PDF	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L
C15N Abstract: No abstract text available Text: IPAG - Innovative Processing AG Product Overview Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com Series IPD12 PIN Diode The Series IPD12 The series IPD12 PINs are applicable for building high bit rate (10 Gbit/s NRZ and	Original	PDF	D-47057 ipag35 IPD12 IPD12 PO-IPD12-0004 C15N
12N03L Abstract: 12N03 Text: IPD12N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) ID V m 10.4 30 A P-TO252 Superior thermal resistance	Original	PDF	IPD12N03L P-TO252 IPD12N03L P-TO252 Q67040-S4342 12N03L 20ents 12N03L 12N03
12CN10N Abstract: No abstract text available Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N
marking EB5 Abstract: diode marking eb5 marking G9 Text: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H )& Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D	Original	PDF	IPD122N10N3 7865AE5 marking EB5 diode marking eb5 marking G9
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10 Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 diode d335 12CN10
12CN10N Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 d67a
12N03L Abstract: IPD12N03L IPU12N03L 12n03 ANPS071E P- TO252 -3-11 Text: IPD12N03L IPU12N03L OptiMOS Buck converter series Product Summary Feature VDS •N-Channel 30 •Logic Level RDS on •Low On-Resistance RDS(on) ID •Excellent Gate Charge x R DS(on) product (FOM) V 10.4 mΩ 30 P- TO251 -3-1 A P- TO252 -3-11 •Superior thermal resistance	Original	PDF	IPD12N03L IPU12N03L Q67040-S4342 12N03L Q67042-S4043 12N03L IPD12N03L IPU12N03L 12n03 ANPS071E P- TO252 -3-11
ip dslam Abstract: IPD12000 DSLAM configuration Text: IP DSL Access Multiplexer 12000 IPD12000 IPD12000 Native IP DSLAM The IP DSLAM for large scale Central Office or MDU/Campus deployments Overview Features Utilizes Net to Net’s IPacket A rc h i t e c t u re Net to Net Technologies’ IP DSL Access Multiplexer is the indus	Original	PDF	IPD12000 UL1950 -200ft 500ft) ip dslam IPD12000 DSLAM configuration
122N10N Abstract: No abstract text available Text: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12.2 mW ID 59 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	PDF	IPD122N10N3 IEC61249-2-21 PG-TO252-3 122N10N 122N10N
Untitled Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3
122N10N Abstract: IPD122N10N3 G JESD22 Text: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.2 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPD122N10N3 PG-TO252-3 122N10N 122N10N IPD122N10N3 G JESD22
Untitled Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 12CNE8N

Untitled Abstract: No abstract text available Text: IPD122N10N3 G TM 3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ )& Y I ฀ -1 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5	Original	PDF	IPD122N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à
127n06l Abstract: IPD127N06L Text: IPD127N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level 60 R DS on ,max 12.7 ID 50 V mΩ A • 175 °C operating temperature • Avalanche rated	Original	PDF	IPD127N06L PG-TO252-3 127N06L 127n06l
12N03L Abstract: 12n03lb 12n03 IPD12N03LB PG-TO252-3-11 Text: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	PDF	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L 12n03lb 12n03 PG-TO252-3-11
infineon marking TO-252 Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IEC61249-2-21 PG-TO263-3 infineon marking TO-252 IEC61249-2-21 PG-TO220-3 12CNE8N
12CN10N Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N 12CN10 diode d335 d67a D-335 IPD12CN10NG IPB12CN10N G
12CN10N Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N
12N03L Abstract: 12N03LB IPD12N03LB PG-TO252-3-11 12n03 Text: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	PDF	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L 12N03LB PG-TO252-3-11 12n03
10 GHz pin diode Abstract: diode all 4606 C10B C10N Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD12_C10Z: 10 GHz PIN Diode Chip Applications The series IPD12 PINs are applicable for building high bit rate, 10 Gbit/s opto-electronic receivers for	Original	PDF	D-47057 ipag35 IPD12 Responsiv75 DS-IPD12 C10Z-0004 10 GHz pin diode diode all 4606 C10B C10N
12CNE8N Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	PDF	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IPB12CN10N PG-TO263-3 PG-TO252-3 12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff
12N03L Abstract: IPU12N03L TO252 thermal character IPD12N03L P-TO252 12n03 Text: IPD12N03L IPU12N03L Preliminary data OptiMOS Power-Transistor Product Summary Feature • N-Channel · Logic Level · Low on-resistance R DS on · Excellent Gate Charge x RDS(on) product (FOM) · Superior thermal resistance · 175°C operating temperature	Original	PDF	IPD12N03L IPU12N03L P-TO251 P-TO252 Q67040-S4342 12N03L Q67042-S4043 12N03L IPU12N03L TO252 thermal character IPD12N03L P-TO252 12n03

IPD12 Search Results

IPD12 Result Highlights (1)

IPD12 Price and Stock

Infineon Technologies AG IPD122N10N3GATMA1

Samtec Inc IPD1-20-D-K

Infineon Technologies AG IPD12CN10NGATMA1

Samtec Inc IPD1-20-D

Samtec Inc IPD1-25-D-K-M

IPD12 Datasheets (36)

IPD12 Datasheets Context Search

12CN10N

12N03L

C15N

12N03L

12CN10N

marking EB5

12CN10N

12CN10N

12N03L

ip dslam

122N10N

Untitled

122N10N

Untitled

Untitled

127n06l

12N03L

infineon marking TO-252

12CN10N

12CN10N

12N03L

10 GHz pin diode

12CNE8N

12N03L