Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IR 1838 T TRANSISTOR Search Results

    IR 1838 T TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IR 1838 T TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR 1838

    Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
    Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing


    Original     		PDF PD-95740 HFA16TB120PbF 260nC HFA16TB120 HFA06TB120 IR 1838 IRFP250 datasheet B120 HFA06TB120 IRFP250

    IR 1838 T

    Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
    Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing


    Original     		PDF PD-95740 HFA16TB120PbF 260nC HFA16TB120 12-Mar-07 IR 1838 T B120 HFA06TB120 IRFP250

    Untitled

    Abstract: No abstract text available
    Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing


    Original     		PDF PD-95740 HFA16TB120PbF 260nC HFA16TB120 08-Mar-07

    IR 1838

    Abstract: irm 1838 HFA30PB120
    Text: Preliminary Data Sheet PD-2.604 05/97 HFA30PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI


    Original     		PDF HFA30PB120 490nC HFA30PB120 IR 1838 irm 1838

    IR 1838 3v

    Abstract: IR 1838 irm 1838 DIODE 76A HFA16TB120
    Text: Preliminary Data Sheet PD -2.492 05/97 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI


    Original     		PDF HFA16TB120 260nC HFA16TB120 IR 1838 3v IR 1838 irm 1838 DIODE 76A

    IR 1838 3v

    Abstract: IR 1838 HFA16PB120 CECC40101
    Text: PD -2.364A HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA16PB120 260nC HFA16PB120 IR 1838 3v IR 1838 CECC40101

    lt 332 diode

    Abstract: GC 72 smd diode IRG4ZH50KD transistor smd MJ 145 lt 39 diode smd smd-10 weight Diode smd 2f T4 diode smd SMD-10 PACKAGE
    Text: PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features ● High short circuit rating optimized for motor control, tsc = 10µs, n-channel C VCES = 1200V VCC = 720V, TJ = 125°C, VGE = 15V


    Original     		PDF IRG4ZH50KD SMD-10 lt 332 diode GC 72 smd diode IRG4ZH50KD transistor smd MJ 145 lt 39 diode smd smd-10 weight Diode smd 2f T4 diode smd SMD-10 PACKAGE

    IR 1838 3v

    Abstract: IR 1838 HFA16TB120S
    Text: Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI


    Original     		PDF HFA16TB120S 260nC HFA16TB120S IR 1838 3v IR 1838

    IR 1838 T

    Abstract: IGBT W 20 NK 50 Z IRG4PH50UD
    Text: PD 9.1573 IRG4PH50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF IRG4PH50UD O-247AC IR 1838 T IGBT W 20 NK 50 Z IRG4PH50UD

    IRG4PH50UD

    Abstract: IR 1838 T
    Text: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF 1573A IRG4PH50UD O-247AC IRG4PH50UD IR 1838 T

    smd TRANSISTOR code marking 2F

    Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
    Text: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits


    Original     		PDF PD-20605 HFA16TB120S 260nC HFA16TB120S smd TRANSISTOR code marking 2F SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838

    IRG4PH50UD

    Abstract: IR 1838 T
    Text: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF 1573A IRG4PH50UD O-247AC p52-7105 IRG4PH50UD IR 1838 T

    transistor 2sk

    Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
    Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k


    OCR Scan     		PDF 2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756 2SD1976 2SB1389 2SB1390 2SB1391 transistor 2sk transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796

    C2335

    Abstract: No abstract text available
    Text: International IOR Rectifier PD 9.1573 IRG4PH50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		PDF IRG4PH50UD O-247AC C2335

    vs 1838 b

    Abstract: 98-I
    Text: PD- 91788 International IQ R Rectifier IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies


    OCR Scan     		PDF IRG4PF50WD O-247AC vs 1838 b 98-I

    TL 1838

    Abstract: IRG4PH50KD
    Text: International 1GR Rectifier PD- 9.1575 IRG4PH50KD PRELIM INARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc=10fis, V cc = 720V , T j = 125°C,


    OCR Scan     		PDF IRG4PH50KD 10fis, TL 1838 IRG4PH50KD

    2SC1811

    Abstract: 2SA896 138D 2SA1015
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 250nS 190nS 2SC1811 2SA896 138D 2SA1015

    C1030 transistor

    Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
    Text: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses


    OCR Scan     		PDF IRGPH50KD2 -10jjs C-1035 O-247AC C-1036 C1030 transistor c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1032

    Untitled

    Abstract: No abstract text available
    Text: P D 9.1573 International IOR Rectifier IRG4PH50UD PRELIMINARY INSULATED G A TE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features UltraFast CoPack IGBT • UltraFast: O ptim ized for high operating V ces = 1200V frequencies up to 40 kH z in hard switching,


    OCR Scan     		PDF IRG4PH50UD 55M52 002023b

    Untitled

    Abstract: No abstract text available
    Text: International Rectifier IGR PD- 91575A IRG4PH50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 1200V • High short circuit rating o ptim ized for m otor control, tsc =10 as, V Cc = 7 2 0 V , T j = 1 2 5 ° C ,


    OCR Scan     		PDF 1575A IRG4PH50KD

    IR 1838 T

    Abstract: IR 1838 T transistor irm 1838 IR 1838
    Text: Preliminary Data Sheet PD -2.492 05/97 International IO R Rectifier H F A 16T B 120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche


    OCR Scan     		PDF HFA16TB120 IR 1838 T IR 1838 T transistor irm 1838 IR 1838

    transistor c429

    Abstract: diode 47C hfa30pb120
    Text: International lO R Rectifier HEXFRED Preliminary Data Sheet PD-2.604 05/97 HFA30PB120 Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions


    OCR Scan     		PDF HFA30PB120 490nC HFA30PB120 transistor c429 diode 47C

    IR 1838 T

    Abstract: 1838 t
    Text: International TOR Rectifier HEXFRED1 Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions


    OCR Scan     		PDF HFA16TB120S 260nC HFA16TB120S IR 1838 T 1838 t

    TL 1838

    Abstract: DS9668CN DS9666CN DS2002CJ DS9667 DS2001 DS2002 DS9666 J16A DS2002CN
    Text: DS2001/DS9665/DS2002/DS9666 DS2003/DS9667/DS2004/DS9668 High Current/Voltage Darlington Drivers General Description The DS2001/DS9665/DS2002/DS9666/DS2003/DS9667 DS2004/DS9668 are comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature


    OCR Scan     		PDF DS2001 /DS9665/DS2002/DS9666 DS2003/DS9667/DS2004/DS9668 DS2001/DS9665/DS2002/DS9666/DS2003/DS9667 DS2004/DS9668 /DS9665 DS2002/DS9666 DS2004/DS9668 TL/F/9647-4 TL 1838 DS9668CN DS9666CN DS2002CJ DS9667 DS2002 DS9666 J16A DS2002CN