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    2SB1389 Search Results

    2SB1389 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1389 Hitachi Semiconductor Silicon PNP Triple Diffused Original PDF
    2SB1389 Hitachi Semiconductor Silicon PNP Darlington Transistor Original PDF
    2SB1389 Hitachi Semiconductor Silicon PNP Triple Diffused Low Freq. Power Amplifier Original PDF
    2SB1389 Renesas Technology Silicon PNP Triple Diffused Original PDF
    2SB1389 Renesas Technology Silicon PNP Triple Diffused Original PDF
    2SB1389 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1389 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1389 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1389 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1389 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1389 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SB1389 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1389

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SB1389 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON APPLICATIONS ・For use in low frequency power amplifier applications PINNING


    Original
    2SB1389 O-220Fa O-220Fa) -40mA 2SB1389 PDF

    2SB1101

    Abstract: 2SB1389 Hitachi DSA00398
    Text: 2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4.5 kΩ Typ 500 Ω (Typ) 3 2SB1389 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


    Original
    2SB1389 O-220FM 2SB1101 2SB1389 Hitachi DSA00398 PDF

    2SB1389

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB1389 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING


    Original
    2SB1389 O-220Fa O-220Fa) -40mA 2SB1389 PDF

    Hitachi DSA002751

    Abstract: No abstract text available
    Text: 2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4.5 kΩ Typ 500 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC) Item Symbol Ratings Unit Collector to base voltage


    Original
    2SB1389 O-220FM 10ica, D-85622 Hitachi DSA002751 PDF

    Hitachi DSA002788

    Abstract: No abstract text available
    Text: 2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4.5 kΩ Typ 500 Ω (Typ) 3 2SB1389 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


    Original
    2SB1389 O-220FM 10ica, D-85622 Hitachi DSA002788 PDF

    2SB1101

    Abstract: 2SB1389 DSA003644
    Text: 2SB1389 Silicon PNP Triple Diffused ADE-208-869 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4.5 kΩ (Typ) 500 Ω (Typ) 3 2SB1389 Absolute Maximum Ratings (Ta = 25°C) Item


    Original
    2SB1389 ADE-208-869 O-220FM 2SB1101 2SB1389 DSA003644 PDF

    2SB1389

    Abstract: No abstract text available
    Text: 2SB1389 Thermal resistance θj-c °C/W Transient Thermal Resistance 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 Time t (s) 10 100 1000


    Original
    2SB1389 2SB1389 PDF

    2SB1389

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SB1389 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION


    Original
    2SB1389 O-220Fa O-220Fa) -40mA 2SB1389 PDF

    2SB1389

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS ·Designed for low frequency power amplifier applications.


    Original
    -40mA 2SB1389 PDF

    2SB1101

    Abstract: 2SB1389
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    D-85622 2SB1101 2SB1389 PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original
    2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original
    2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    2SB1101

    Abstract: 2SB1389
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    D-85622 2SB1101 2SB1389 PDF

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original
    HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original
    24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1389 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit C o lle cto r to base vo lta g e ^G B O -6 0 V C o lle cto r to e m itte r vo lta g e V CEo -6 0 V


    OCR Scan
    2SB1389 D-85622 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1389 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T 0 -2 20 F M H 2 1 1. Base 2. C ollector 3. Emitter 4.5 kQ Typ 1 2 3 Absolute Maximum Ratings (T a = | 'o 500 Q (Typ) ¿ 3 2 5 °C ) Item Symbol Ratings Unit Collector to base voltage


    OCR Scan
    2SB1389 2SB1101. PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SB1389 Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolut« Maximum Ratings Ta = 25°C Mem Symbol Rating Unit Collector to base voltage V CBO -6 0 V Collector to emitter voltage V CEO -•60 V Emitter to base voltage V EBO -7 V Collector current


    OCR Scan
    2SB1389 O-22G 2SBII01. PDF

    2SB536A

    Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
    Text: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ


    OCR Scan
    2SB13n7M 2SA1782 2SB1320A 2SA1561 2SA1703 2SA1426 2SA1559 2SB1242 2SB536A 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431 PDF

    2sb1355

    Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
    Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^


    OCR Scan
    2SR562 2SB1329 2SA1706 2SB1433 2SB1517 2SA1707 2SA1708 2SB1459 2SB1332 2sb1355 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770 PDF

    2SA1115

    Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
    Text: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225


    OCR Scan
    2SA1225 2SA1178 2SB1226 2SB1024 2SB1342 2SB1227 2SB1024 2SB1430 2SA1115 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    2SB1370

    Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
    Text: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40


    OCR Scan
    2SB1369 2SB1370 2SB1371 2SB1372 2SB1373 2SB1375 2SB1376 61393A 09K/0. 2SD2099 2SB1370 2sd2083 2sb1383 2SD2012 2SB1375 PDF

    transistor 2sk

    Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
    Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k


    OCR Scan
    2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756 2SD1976 2SB1389 2SB1390 2SB1391 transistor 2sk transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796 PDF