2SB1372
Abstract: 2SD2065
Text: Power Transistors 2SB1372 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2065 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –140 V Collector to emitter voltage
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2SB1372
2SD2065
2SB1372
2SD2065
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2065 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1372 Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 140 V Collector to emitter voltage
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2SD2065
2SB1372
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2SB1372
Abstract: 2SD2065
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1372 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2065 APPLICATIONS
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2SB1372
-140V
2SD2065
-140V;
-20mA;
2SB1372
2SD2065
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1372 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2065 Unit: mm 15.0±0.3 11.0±0.2 ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –140 V Collector to emitter voltage
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2SB1372
2SD2065
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2SB1372
Abstract: 2SD2065
Text: Power Transistors 2SD2065 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1372 M Di ain sc te on na tin nc ue e/ d Unit: mm ● ● ● 0.7 Ratings Unit Collector to base voltage VCBO 140 V Collector to emitter voltage
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2SD2065
2SB1372
2SB1372
2SD2065
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2SB1372
Abstract: 2SD2065
Text: Power Transistors 2SD2065 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1372 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 140 V Collector to emitter voltage VCEO 140 V Emitter to base voltage
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2SD2065
2SB1372
2SB1372
2SD2065
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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A968A
Abstract: 2SD2140 2SB1372
Text: Power Transistors bTBEñSM DD11377 TT7 •PNCE PANASONIC INDL/ELEKÍ SEMI 2SD2140 2SD2140 h^E D Silicon NPN Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 U n it : 15.5max. ■ Features • V e r y good lin e a rity o f D C c u rre n t gain
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bT326S4
DD11377
2SD2140
2SB1372
100x2.
A968A
2SD2140
2SB1372
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251C
Abstract: 2SB1372 2SD2065
Text: P o w e r T ra n s is to rs — 2SD2065 b q 3 2 flS4 o o n a s M PAN ASO NIC mi m p n c b INDL/ELEK SEM I 2SD2065 bT E D Silicon T rip le -D iffu se d P lanar Type Package Dim ensions High Pow er Am plifier Com plem entary Pair with 2SB1372 U n it ^ mm 5.2m ax.
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QD11354
2SD2065
2SD2065
2SB1372
1135b
00x2iâ
251C
2SB1372
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2SD2065
Abstract: 2SB1372
Text: Power T ransistors 2SD2065 2SD2065 Silicon Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 • Features Unit ^ mm «15.5max. 5 2max. ■3.2 6.9min. I-*- *1 • V ery good linearity of DC c u rre n t gain Iife
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2SD2065
2SB1372
Packag25Â
TC-25
2SB1372
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2SB1372
Abstract: 2SD2065
Text: Power T ransistors 2SB1372 2SB1372 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2065 Unit : mm • Features or • V ery good linearity of DC c u rre n t gain 4- I i f e • Wide area of safety operation (ASO)
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2SB1372
2SD2065
-20rr
2SD2065
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2140 2SD2140 Silicon NPN Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 ■ Features • V ery good lin e a rity of DC c u r re n t gain I i f e • W ide a re a of good lin e a rity (ASO)
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2SD2140
2SB1372
2SD2i40
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i-003
Abstract: 2SB1372 2SD2065
Text: P o w e r T ra n s is to rs 2SD2065 2SD2065 Silicon Triple-Diffused Planar Type Package Dim ensions High Pow er Amplifier Com plem entary Pair with 2SB1372 15.5max. • Features 6.9min. • Very good linearity of DC cu rre n t gain • Wide area of safety operation ASO
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2SD2065
2SB1372
32flSE
i-003
2SB1372
2SD2065
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a968a
Abstract: 2SB1372 2SD2140
Text: Power Transistors 2SD2140 2SD2140 Silicon NPN Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 ■ Features • V e r y g o o d lin e a r ity o f D C c u r r e n t g a in I i f e • W id e a r e a o f g o o d lin e a r ity (A S O )
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2SD2140
2SB1372
a968a
2SB1372
2SD2140
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2SB816
Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3
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2SA1253
2SB849
2SB775
2SA1264
2SB965
2SB1371
2SA1264
2SB1372
2SB816
2SA1265
2SB1212
2SB921
2SB873
2SA1120
2SB1085B
2sb 989
2SB941
2SC4341
2SB1416
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
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2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SA1185
2SB1054/2SD1485
2SB1421
2SD1457
2SD1457A
2SB1252/2SD1892
2SB1502/2SD2275
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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2SB1013
Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Text: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018
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2SB884
2SB679
2SB1105
2SB949
2SB1226
2SB1402
2SB949A
2SB1131
2SA1431
2SB1117
2SB1013
2S897
2SB1315
2SA1307
2SB1306
2sb631 hitachi
2SB747
1318J
2SB679
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2SB596
Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Text: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T
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2SB824
2SB596
2SB703
2SB859
2SB942
2SB1334
2SB942A
2SB686
2sb773
2SB773A
2SA1232
2SB 773
2SB965
2SA1283
773a
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2SA818
Abstract: 2SB681 2SB849 2SC4341 2SB681 TOSHIBA 2SB601 2SB686 2SB688 2SB558 2sb669
Text: 49 - S € Type No. a « Manuf. E ft SANYO 2SB 648 B ÍL 2SA1209 2SB 648A S ÍL 2SA1209 2SB 649 ÍL 2SB 649A S ÎL 2SB 650 H ÎL 2SB 653A ÍL 2SB 654A ÎL 2S8 655A i 2SB 668 • 2SA1011 Ä TOSHIBA Is NEC ÍL HITACHI i t i FUJITSU fâ T MATSUSHITA h m MITSUBISHI
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2sa1209
2sa1142
2sa818
2sa1284
2sa1220
2sb1086
2sa1011
2sa968
2sa1220a
2SB681
2SB849
2SC4341
2SB681 TOSHIBA
2SB601
2SB686
2SB688
2SB558
2sb669
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en220
Abstract: DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659
Text: - m « Type No. 2SA 1648 . 2SA 1649 " 2SA 1650 , 2SA 165! 2SA 1652 2SA 1653 2SA 1654 -• 2SA 1655 2SA 1656 , 2SA 1657 2SA 1658 2SA 1659 2SA 1660 2SA 1661 2SA 1662 2SA 1663 2SA 1664 2SA 1665 2SA 1666 2SA 1667 • 2SA 1668 2SA 1669 2SA 1670 •" 2SA 1671 ^
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2sb1203
2SA1244
2SB933
2SB1204
2SB952
2SB945
2SB1294
2SB1018
2SB946
2SA145Z
en220
DTA143ES
2SA1441
1658 NEC
2sa 1659
RT1P431S
2sa1265n
2SB1188
2SB1371
2SA1659
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SD2340 equivalent
Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2254
2SB1493
2SD1485
2SB1531
2SD2328
2SA1185
2SD2052 equivalent
2SD1641
2SD1707
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2SD2340 equivalent
Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2250
2SD1485
d2554
2SD2340
audio Darlington 200 W
2SD2052 equivalent
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