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    IR RECTIFIER DIODE 100A 800V Search Results

    IR RECTIFIER DIODE 100A 800V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    IR RECTIFIER DIODE 100A 800V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRFB8407 AUIRFS8407 AUIRFSL8407 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant


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    AUIRFB8407 AUIRFS8407 AUIRFSL8407 AUIRFB/S/SL8407 PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRFB8407 AUIRFS8407 AUIRFSL8407 AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant


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    AUIRFB8407 AUIRFS8407 AUIRFSL8407 PDF

    IRFBE30L

    Abstract: IRFBE30S
    Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


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    IRFBE30S IRFBE30L O-262 12-Mar-07 IRFBE30L IRFBE30S PDF

    P-Channel MOSFET 800v

    Abstract: IRFBE30L IRFBE30S IRL3103L
    Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


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    IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L 12-Mar-07 P-Channel MOSFET 800v IRFBE30L IRFBE30S IRL3103L PDF

    25A, 50V BRIDGE-RECTIFIER

    Abstract: PFCM-1500M rectifier diode piv 26A RECTIFIER BRIDGE 600 watt amps schematic
    Text: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE


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    PFCM-1500M 25A, 50V BRIDGE-RECTIFIER PFCM-1500M rectifier diode piv 26A RECTIFIER BRIDGE 600 watt amps schematic PDF

    500 watt half bridge schematic

    Abstract: 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
    Text: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING


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    PFCM-1500C 500 watt half bridge schematic 25A, 50V BRIDGE-RECTIFIER PFCM-1500C PDF

    500 watt half bridge schematic

    Abstract: 26A RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500M IR rectifier diode 100A 800V power diode with piv of 30v
    Text: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE


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    PFCM-1500M 500 watt half bridge schematic 26A RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500M IR rectifier diode 100A 800V power diode with piv of 30v PDF

    rectifier diode with piv of 30v

    Abstract: power diode with piv of 30v 500 watt half bridge schematic DIODE RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
    Text: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING


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    PFCM-1500C rectifier diode with piv of 30v power diode with piv of 30v 500 watt half bridge schematic DIODE RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500C PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft


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    I27309 GB50RF60K 12-Mar-07 PDF

    300a 1000v thyristor

    Abstract: 100a 1000v thyristor thyristor 10A NTE308 53 diode
    Text: NTE308 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Commutating Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A


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    NTE308 16kHz) 300a 1000v thyristor 100a 1000v thyristor thyristor 10A NTE308 53 diode PDF

    NTE310

    Abstract: No abstract text available
    Text: NTE310 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Trace Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A


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    NTE310 16kHz) NTE310 PDF

    P-Channel MOSFET 800v

    Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
    Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


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    IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode PDF

    P-Channel MOSFET 800v

    Abstract: No abstract text available
    Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


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    IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L 08-Mar-07 P-Channel MOSFET 800v PDF

    Untitled

    Abstract: No abstract text available
    Text: SDR55U080CT thru SDR55U120CT Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 55 AMP ULTRA FAST CENTERTAP RECTIFIER DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


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    SDR55U080CT SDR55U120CT SDR55U O-254 O-258 O-259 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft


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    I27309 GB50RF60K PDF

    SDR55U080

    Abstract: No abstract text available
    Text: SDR55U080CT thru SDR55U120CT Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 55 AMP ULTRA FAST COMMON CATHODE RECTIFIER DESIGNER’S DATA SHEET


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    SDR55U080CT SDR55U120CT SDR55U O-254 O-258 O-259 R55U080CT SDR55U080 PDF

    AUIRLI2505

    Abstract: No abstract text available
    Text: PD - 97766 AUTOMOTIVE GRADE AUIRLI2505 Features l l l l l l l l l l Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to


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    AUIRLI2505 AUIRLI2505 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97766 AUTOMOTIVE GRADE AUIRLI2505 Features l l l l l l l l l l Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to


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    AUIRLI2505 PDF

    Untitled

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y * A2 APT2X101D100J 1000V 100A APT2X101D90J 900V 100A APT2X101D80J 800V 100A Al DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode


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    APT2X101D100J APT2X101D90J APT2X101D80J OT-227 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 12155 05 /98 International l R Rectifier q u ie t IR Series 70EPR. FAST SOFT RECOVERY RECTIFIER DIODE 'f ir m s = 135A VF < 1.4V@ 85A trr = 95ns VRRM 800 to 1200V Description/Features The 70EPF. fast soft recovery Q U IE T lR rectifier series


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    70EPR. 70EPF. -40to150 PDF

    D125U4

    Abstract: D125U10 D125U6 D125U8 IR rectifier diode 100A 800V
    Text: b3E ^514054 D □□□□45b IVMI 444 RECTIFIER CHIPS 70nS RECOVERY V RWM = T rr = D125U4 D125U8 D125U6 D125U10 Ni - Gold Top and Bottom 4 0 0 -1000V 70nS Glass Passivation Hermetically Sealed .x .030 VOLTAGE MULTIPLIERS X I NC .125 .125 Peak Inverse Voltage


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    D125U4 D125U8 D125U6 D125U10 00-1000V D125U10 IR rectifier diode 100A 800V PDF

    wd800

    Abstract: B36-A
    Text: PD - 9.543C International I«R Rectifier IRFPG50 HEXFET Power MOSFET • D y n a m ic d v /d t R a tin g • Repetitive Avalanche Rated • V DSS = Is o la te d C e n tra l M o u n tin g H o le • Fast Switching • Ease of Paralleling • Simple Drive Requirements


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    IRFPG50 10-02Tan wd800 B36-A PDF

    diode BYY 62

    Abstract: MOSFET 800V 10A to 220 3l IRFBE20 BYY diode
    Text: PD-9.610A International S Rectifier IRFBE20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 800V ^DS on = lD = 1.8A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r provid e th e d e sig n e r


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    IRFBE20 O-220 diode BYY 62 MOSFET 800V 10A to 220 3l IRFBE20 BYY diode PDF

    APT15D80K

    Abstract: No abstract text available
    Text: AD VANCED PO W ER T e ím n o l o g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K APT15D90K APT15D80K 1000V 900V 800V 15A 15A 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE P R O D U C T A P P L IC A T IO N S P R O D U C T F E A TU R E S PR O D U C T B E N E F IT S


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    APT15D100K APT15D90K APT15D80K T0-220 TQ-220AC APT15D80K PDF