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    IRFBE20 Search Results

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    IRFBE20 Price and Stock

    Vishay Siliconix IRFBE20PBF

    MOSFET N-CH 800V 1.8A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBE20PBF Tube 1,480 1
    • 1 $2.29
    • 10 $2.29
    • 100 $2.29
    • 1000 $0.73496
    • 10000 $0.63362
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    New Advantage Corporation IRFBE20PBF 7,500 1
    • 1 -
    • 10 -
    • 100 $0.6714
    • 1000 $0.6714
    • 10000 $0.6714
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    Vishay Siliconix IRFBE20

    MOSFET N-CH 800V 1.8A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBE20 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.375
    • 10000 $2.375
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    ComSIT USA IRFBE20 250
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    Vishay Siliconix IRFBE20S

    MOSFET N-CH 800V 1.8A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBE20S Tube 350
    • 1 -
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    • 100 -
    • 1000 $1.22074
    • 10000 $1.22074
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    Vishay Siliconix IRFBE20L

    MOSFET N-CH 800V 1.8A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBE20L Tube
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    Vishay Siliconix IRFBE20PBF-BE3

    MOSFET N-CH 800V 1.8A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFBE20PBF-BE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.73496
    • 10000 $0.73496
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    IRFBE20 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFBE20 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFBE20 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-220AB Original PDF
    IRFBE20 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRFBE20 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRFBE20 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFBE20 International Rectifier Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A) Scan PDF
    IRFBE20 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFBE20 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFBE20L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-262 Original PDF
    IRFBE20PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFBE20PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-220AB Original PDF
    IRFBE20PBF Vishay Semiconductors MOSFET N-CH 800V 1.8A TO-220AB Scan PDF
    IRFBE20PBF-BE3 Vishay Siliconix MOSFET N-CH 800V 1.8A TO220AB Original PDF
    IRFBE20STRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A D2PAK Original PDF
    IRFBE20STRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A D2PAK Original PDF

    IRFBE20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    9014 transistor specification

    Abstract: AN609 IRFBE20 SiHFBE20
    Text: IRFBE20_RC, SiHFBE20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRFBE20 SiHFBE20 AN609, 20-Apr-10 9014 transistor specification AN609 PDF

    diode IR 132 E

    Abstract: DIODE NU
    Text: PD - 95630 IRFBE20PbF • Lead-Free www.irf.com 1 8/4/04 IRFBE20PbF 2 www.irf.com IRFBE20PbF www.irf.com 3 IRFBE20PbF 4 www.irf.com IRFBE20PbF www.irf.com 5 IRFBE20PbF 6 www.irf.com IRFBE20PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations


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    IRFBE20PbF O-220AB. O-220AB diode IR 132 E DIODE NU PDF

    IRFBE20

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) Configuration


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    IRFBE20, SiHFBE20 O-220 12-Mar-07 IRFBE20 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


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    IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    400VID

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBE20 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    O-220AB IRFBE20 400VID PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95630 IRFBE20PbF • Lead-Free Document Number: 91117 8/4/04 www.vishay.com 1 IRFBE20PbF Document Number: 91117 www.vishay.com 2 IRFBE20PbF Document Number: 91117 www.vishay.com 3 IRFBE20PbF Document Number: 91117 www.vishay.com 4 IRFBE20PbF Document Number: 91117


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    IRFBE20PbF 08-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


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    IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


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    IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


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    IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFBE20

    Abstract: IRFBE20PbF SiHFBE20 SiHFBE20-E3
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) Configuration


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    IRFBE20, SiHFBE20 O-220 O-220 18-Jul-08 IRFBE20 IRFBE20PbF SiHFBE20-E3 PDF

    IRFBE20

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


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    IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBE20 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95630 IRFBE20PbF • Lead-Free Document Number: 91117 8/4/04 www.vishay.com 1 IRFBE20PbF Document Number: 91117 www.vishay.com 2 IRFBE20PbF Document Number: 91117 www.vishay.com 3 IRFBE20PbF Document Number: 91117 www.vishay.com 4 IRFBE20PbF Document Number: 91117


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    IRFBE20PbF 12-Mar-07 PDF

    IRFBE20

    Abstract: SiHFBE20 SiHFBE20-E3 d1758
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


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    IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBE20 SiHFBE20-E3 d1758 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


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    IRFBE20, SiHFBE20 2002/95/EC O-220AB 11-Mar-11 PDF

    n 332 ab

    Abstract: No abstract text available
    Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


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    IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 n 332 ab PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBE20 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)1.8 I(DM) Max. (A) Pulsed I(D)1.2 @Temp (øC)100# IDM Max (@25øC Amb)7.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)54 Minimum Operating Temp (øC)-55õ


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    IRFBE20 PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


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    2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


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    IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET PDF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


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    OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 PDF

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


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    IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R PDF

    diode BYY 62

    Abstract: MOSFET 800V 10A to 220 3l IRFBE20 BYY diode
    Text: PD-9.610A International S Rectifier IRFBE20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 800V ^DS on = lD = 1.8A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r provid e th e d e sig n e r


    OCR Scan
    IRFBE20 O-220 diode BYY 62 MOSFET 800V 10A to 220 3l IRFBE20 BYY diode PDF

    Untitled

    Abstract: No abstract text available
    Text: International ioR Rectifier M Ö 55452 HEXFET P o w e r M O S F E T IN T E R N A T I O N A L • • • • • IIN R 0 D 1 4 cJbfl S B T PD-9.610A IRFBE20 R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling


    OCR Scan
    IRFBE20 50IFIER PDF