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Dongil Technology IR-0622H LINE FLTR 250VAC/VDC 6A PANEL
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DigiKey	IR-0622H	Box	65		1	1 $11.02 10 $8.985 100 $7.3253 1000 $6.525 10000 $6.525	Buy Now
PEI Genesis CIR06-18-10S-F80-T12 CIR 4C 4#12 SKT PLUG
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DigiKey	CIR06-18-10S-F80-T12	Bulk	31		1	1 $77.07 10 $64.23 100 $45.72 1000 $45.72 10000 $45.72	Buy Now
PEI Genesis CIR06-10SL-3P CONN PLUG MALE 3P SILV SLDR CUP
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DigiKey	CIR06-10SL-3P	Bulk	18		1	1 $52.98 10 $44.15 100 $31.43 1000 $31.43 10000 $31.43	Buy Now
PEI Genesis CIR06-10SL-4P CONN PLUG MALE 2P SILV SLDR CUP
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DigiKey	CIR06-10SL-4P	Bulk	18		1	1 $56.83 10 $47.36 100 $33.71 1000 $33.71 10000 $33.71	Buy Now
PEI Genesis CIR06-10SL-3P-T12 CONN PLUG MALE 3P GOLD SLDR CUP
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DigiKey	CIR06-10SL-3P-T12	Bulk	18		1	1 $67.88 10 $56.56 100 $40.27 1000 $40.27 10000 $40.27	Buy Now

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IR06 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
IR060LM06CS02CB	International Rectifier	FAST RECOVERY DIODE	Original	PDF
IR060LM06CS02CF	International Rectifier	FAST RECOVERY DIODE	Original	PDF
IR060PM12CS02CB	International Rectifier	FAST RECOVERY DIODE	Original	PDF
IR060PM12CS02CF	International Rectifier	FAST RECOVERY DIODE	Original	PDF
IR062HD4C10U-P2	International Rectifier	HIGH VOLTAGE HALF BRIDGE	Original	PDF
IR062HD4C10U-P2	International Rectifier	HIGH VOLTAGE HALF BRIDGE	Original	PDF
IR062HD4C10U-P2PBF	International Rectifier	HIGH VOLTAGE HALF BRIDGE	Original	PDF

IR06 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
diode 1044 Abstract: No abstract text available Text: Preliminary Data Sheet I0119J 09/00 IR060LM12CS02CB FAST RECOVERY DIODE Junction Size: Square 60 x 60 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: Major Ratings and Characteristics Parameters Units	Original	I0119J IR060LM12CS02CB diode 1044	PDF
IRO618LC2Q Abstract: No abstract text available Text: 6 TO 18 GHz IMAGE REJECTION OR I/Q MIXERS MODELS: IR0618LC2A, IR0618LC2B, IR0618LC2C AND IR0618LC2Q FEATURES • RF/LO Coverage . 6 to 18 GHz • IF Operation . DC to 0.5 GHz • LO Power Range . +10 to +13 dBm • Conversion Loss . 9 dB Typical	Original	IR0618LC2A, IR0618LC2B, IR0618LC2C IR0618LC2Q IRO102A16B IR0618LC2Q IRO618LC2Q	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IR06.P02F-F40.NO1Z.7SCV IR06.P02F-11119423 Inductive proximity switch dimension drawing 40 ø 6,5 LED general data photo mounting type flush special type factor 1 nominal sensing distance Sn 2 mm hysteresis 3 . 20 % of Sr output indicator	Original	P02F-F40 P02F-11119423	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet No. PD60171B IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 600V rated breakdown voltage • High side gate drive designed for bootstrap operation • Matched propagation delay for both channels	Original	PD60171B IR062HD4C10U-P2 IR082HD4C10U-P2 IR062HD4C10U-P2) IR082HD4C10U-P2) IR082HD4C10U-P2 2HD4C10U-P2	PDF
IR060LM06CS02CB Abstract: diode 1044 front metal rectifier square type box cf Text: Bulletin I0129J rev. C 02/00 IR060LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 60 x 60 mils Wafer Size: 4" V RRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: Major Ratings and Characteristics Parameters V FM Maximum Forward Voltage	Original	I0129J IR060LM06CS02CB IR060LM06CS02CB diode 1044 front metal rectifier square type box cf	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IR06.P02F-F40.PC1Z.7SCV IR06.P02F-11119424 Inductive proximity switch dimension drawing 40 ø 6,5 LED general data photo mounting type flush special type factor 1 nominal sensing distance Sn 2 mm hysteresis 3 . 20 % of Sr output indicator	Original	P02F-F40 P02F-11119424	PDF
Untitled Abstract: No abstract text available Text: Bulletin I0129J rev. C 02/00 IR060LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 60 x 60 mils Wafer Size: 4" V RRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: Major Ratings and Characteristics Parameters V FM Maximum Forward Voltage	Original	I0129J IR060LM06CS02CB 12-Mar-07	PDF
IR062HD4C10U-P2 Abstract: IR082HD4C10U-P2 IR2106 IR2108 Text: Preliminary Data Sheet No. PD60171 IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 600V rated breakdown voltage • High side gate drive designed for bootstrap operation • Bootstrap diode integrated into package	Original	PD60171 IR062HD4C10U-P2 IR082HD4C10U-P2 IR062HD4C10U-P2) IR082HD4C10U-P2) IR062HD4C10U-P2 IR082HD4C10U-P2 h90245 IR2106 IR2108	PDF
IR060PM12CS02CB Abstract: front metal rectifier square type Text: Preliminary Data Sheet I0119J rev. A 11/00 IR060PM12CS02CB FAST RECOVERY DIODE Junction Size: Square 60 x 60 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: Major Ratings and Characteristics Parameters	Original	I0119J IR060PM12CS02CB IR060PM12CS02CB front metal rectifier square type	PDF
ir06 Abstract: IR062HD4C10U-P2 IR082HD4C10U-P2 IR2106 IR2108 igbt1 Text: Preliminary Data Sheet No. PD60171-C IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 600V rated breakdown voltage • High side gate drive designed for bootstrap operation • Matched propagation delay for both channels	Original	PD60171-C IR062HD4C10U-P2 IR082HD4C10U-P2 IR062HD4C10U-P2) IR082HD4C10U-P2) IR062HD4C10U-P2 IR082HD4C10U-P2 ir06 IR2106 IR2108 igbt1	PDF
IR062HD4C10U-P2 Abstract: IR082HD4C10U-P2 IR2106 IR2108 power IGBT Text: Preliminary Data Sheet No. PD60171-D IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 575V rated breakdown voltage • High side gate drive designed for bootstrap operation • Matched propagation delay for both channels	Original	PD60171-D IR062HD4C10U-P2 IR082HD4C10U-P2 IR062HD4C10U-P2) IR082HD4C10U-P2) IR062HD4C10U-P2 IR082HD4C10U-P2 5M-1982 IR2106 IR2108 power IGBT	PDF
IR0618LC2Q Abstract: IRO618LC2Q Text: 6 TO 18 GHz IMAGE REJECTION OR I/Q MIXERS MODELS: IR0618LC2A, IR0618LC2B, IR0618LC2C AND IR0618LC2Q FEATURES • RF/LO Coverage . 6 to 18 GHz • IF Operation . DC to 0.5 GHz • LO Power Range . +10 to +13 dBm • Conversion Loss . 9 dB Typical	Original	IR0618LC2A, IR0618LC2B, IR0618LC2C IR0618LC2Q IRO102A16B IR0618LC2Q IRO618LC2Q	PDF
IR062H4C10U-P2 Abstract: half bridge driver Text: Preliminary Data Sheet No. PD60171A IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 600V rated breakdown voltage • High side gate drive designed for bootstrap operation • Matched propagation delay for both channels	Original	PD60171A IR062HD4C10U-P2 IR082HD4C10U-P2 IR062HD4C10U-P2) IR082HD4C10U-P2) IR082HD4C10U-P2 IR062H4C10U-P2 half bridge driver	PDF
R5F5631 Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f Text: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D	Original	RX63N RX631 100-MHz 32-bit 12-bit R01DS0098EJ0100 PLQP0176KB-A PLQP0144KA-A R5F5631 R5F563NBDDFP A083H 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f	PDF

Untitled Abstract: No abstract text available Text: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by	Original	RX630 32-Bit RX600 R01UH0040EJ0160	PDF
Untitled Abstract: No abstract text available Text: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D	Original	RX63N RX631 R01DS0098EJ0100 100-MHz 32-bit 12-bit PLQP0176KB-A PLQP0144KA-A	PDF
Untitled Abstract: No abstract text available Text: Datasheet RX62T Group Renesas MCUs R01DS0096EJ0100 Rev.1.00 Apr 20, 2011 100-MHz 32-bit RX MCUs, FPU, 165 DMIPS, 12-bit ADC 3 S/H circuits, double data register, amplifier, comparator : two units, 10-bit ADC one unit, the three ADC units are capable of simultaneous 7-ch. sampling, 100-MHz PWM (two three-phase complementary	Original	RX62T R01DS0096EJ0100 100-MHz 32-bit 12-bit 10-bit IEEE-754	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet Specifications in this document are tentative and subject to change. RX210 Group Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA, ELC, MPC, RTC, up to 9 comms interfaces; incorporating functions for IEC60730 compliance	Original	RX210 50-MHz 32-bit 512-KB 12-bit 10-bit IEC60730 R01DS0041EJ0050 PLQP0100KB-A PLQP0080KB-A	PDF
R01US0032EJ Abstract: No abstract text available Text: User’s Manual 32 Cover RX63T Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by	Original	RX63T 32-Bit RX600 R01UH0238EJ0210 R01US0032EJ	PDF
R5F56218BNFP Abstract: R5F562N8BNFP R5F56218 R5F56216 r5f562 RX621 ir234 IR247 sdc 7500 ir153 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
ir06 Abstract: No abstract text available Text: Infrared Emitting Diode End Look 2 Chip Part Number Material Wave lengt h p BIR-BM18V4V-2 GaAlAs/GaAs 940 BIR-BO18V4V-2 GaAlAs/GaAlAs 850 BIR-BO08V4V-2 GaAlAs/GaAlAs 850 BIR-BN08V4V-2 GaAlAs/GaAlAs BIR-BM18E4G-2 Lens Color V F V @ I F =50m A Ee(mW/cm )	Original	BIR-BM18V4V-2 BIR-BO18V4V-2 BIR-BO08V4V-2 BIR-BN08V4V-2 BIR-BM18E4G-2 BIR-BO18E4G-2 BIR-BO08E4G-2 BIR-BN08E4G-2 ir06	PDF
LTC4100 sample code Abstract: diode ir01 va06 VA08 TIP 41A Text: LTC1760 Dual Smart Battery System Manager DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SMBus Charger/Selector for Two Smart Batteries* Voltage and Current Accuracy within 0.2% of Value Reported by Battery Simplifies Construction of “Smart Battery System	Original	LTC1760 10-Bit LTC4007 LTC4008 LTC4100 1760f LTC4100 sample code diode ir01 va06 VA08 TIP 41A	PDF
IROH-01-458 Abstract: No abstract text available Text: C IMAGE REJECT MIXERS Power dBm) nom. Conversion Loss (dB) max. 1 dB Comp. Pt. (dBm) min. (2) Image Rejection (dBc) min. P/N LO± IF LO + IF LO± IF LO ± IF LO ± IF +10 +10 +10 +10 +10 9.0 9.0 9.0 10.0 10.0 +3 +3 +3 +3 +3 25 25 25 20 20 IR-01-* IR-02-*	OCR Scan	IR-01-* IR-02-* IR-03-* IR-04-* IR-05-* IR-06-* IR-07-* IR-08-* IR-09-* IR-10-* IROH-01-458	PDF
NTC SD-9 Abstract: R1561 NTC SD-15 PLS4148 S72I MUAB Text: 199SlSh< — SSVnSSSWS — — T T- 3 3 9 333 3333333333 3 3 333333333 la o rfN P K A V M ia 5 Q Ö Ö O O Ö Ö f l Hr'p,^'‘rtrt^ HrtNfHiN«NNN«NNrtnrtf»nnnonrt'»-i’f>»i»f •»¥í'iflíi«fiirtioiíiinifiift'í'í'íií K i n i i h a f t O '-	OCR Scan	19961Sheet PWA-5024/M LI2301-LI2315 PWA-S024/M NTC SD-9 R1561 NTC SD-15 PLS4148 S72I MUAB	PDF

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Dongil Technology IR-0622H

PEI Genesis CIR06-18-10S-F80-T12

PEI Genesis CIR06-10SL-3P

PEI Genesis CIR06-10SL-4P

PEI Genesis CIR06-10SL-3P-T12

IR06 Datasheets (7)

IR06 Datasheets Context Search

diode 1044

IRO618LC2Q

Untitled

Untitled

IR060LM06CS02CB

Untitled

Untitled

IR062HD4C10U-P2

IR060PM12CS02CB

ir06

IR062HD4C10U-P2

IR0618LC2Q

IR062H4C10U-P2

R5F5631

Untitled

Untitled

Untitled

Untitled

R01US0032EJ

R5F56218BNFP

ir06

LTC4100 sample code

IROH-01-458

NTC SD-9