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    IRF N-CHANNEL POWER MOSFETS Search Results

    IRF N-CHANNEL POWER MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF N-CHANNEL POWER MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    irf MOSFET p-CH

    Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
    Text: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description


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    PD-95341 IRF5851PbF irf MOSFET p-CH IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23 PDF

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


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    RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252 PDF

    samco-i inverter manual

    Abstract: samco-i inverter diagram IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION SAMCO-vm05 5kw inverter circuit diagram samco-i manual 400W sine wave inverter circuit diagram samco-i inverter 1.5kw 500 kva inverter diagrams
    Text: NEW-CONCEPT TOP-CLASS INVERTERS FEATURING COMPACT DESIGN & LIGHT WEIGHT Actual Size SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Birth of the new SAMCO-e Series of inverters that offer outstanding operability and multiple functions in a compact body


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    k1-V11EA1-0603020ND samco-i inverter manual samco-i inverter diagram IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION SAMCO-vm05 5kw inverter circuit diagram samco-i manual 400W sine wave inverter circuit diagram samco-i inverter 1.5kw 500 kva inverter diagrams PDF

    charge pump relay drive circuit

    Abstract: IRF P CHANNEL MOSFET pioneer mosfet IRF-520 Mosfet VN2210N3 ICM7555 TN0604N3 TN2524N8 VN2224 VN2224N3
    Text: TN/TP Series Application Note AN–D2 Low-Threshold MOSFETs: Structure, Performance and Applications Since an increasing amount of attention is being focused on system interface from low-level logic, the need for higher current and/or low on-resistance at drive levels of only 3-5 volts has


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    IRF-520 Mosfet

    Abstract: cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic
    Text: TN/TP Series Applications TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure


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    TN0524N3 IRF-520 Mosfet cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic PDF

    ICM7555

    Abstract: TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET
    Text: TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure 2, at voltages less than the actual BVDSS rating.


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    TN0524N3 ICM7555 TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET PDF

    IRF-520 Mosfet

    Abstract: VN2224 to-220 IRF P CHANNEL MOSFET definition of photovoltaic effect IRF P CHANNEL MOSFET TO-220
    Text: TN/TP Series Application Note AN–D2 Low-Threshold MOSFETs: Structure, Performance and Applications Since an increasing amount of attention is being focused on system interface from low-level logic, the need for higher current and/or low on-resistance at drive levels of only 3-5 volts has


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    TN2124K1 TN2124K1 IRF-520 Mosfet VN2224 to-220 IRF P CHANNEL MOSFET definition of photovoltaic effect IRF P CHANNEL MOSFET TO-220 PDF

    800w class d circuit diagram schematics

    Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
    Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 2 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.


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    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


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    O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet PDF

    irf840 rf

    Abstract: THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332
    Text: THOnSON/ DISTRIBUTOR SflE 5 • TDEb&TB 0005707 ■ TCSK - Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued P a cka g e ^pr i » [j M a x im u m R a tin g s bvdss >d s (V) (A) rD S(O N ) O HM S 400 0 .3 0 0.40 0.40 0.50 1.15 1.30 1.35 1.50


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    102bfi73 to-204 to-205 T0-220 O-247 IRF322 IRF320 IRF332 IRF330 IRF342 irf840 rf THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332 PDF

    1RFP250

    Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241
    Text: T H O M SO N/ D I S T R I B U T O R SflE D • =¡021,073 0 0 05 70 b ZIE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued Package Maximum Ratings b v DSS (V) ■d s (A) rDS(ON) OHMS 150 4 4.50 5 5.5 1.20 8 9 16 18 25 30 200 0.25 0.32


    OCR Scan
    000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241 PDF

    irf9630

    Abstract: IRF9632 IRF9631
    Text: HARRIS IR F9630, IRF9631 IRF 9632, IRF9633 Avalanche Energy Rated P-Channel Power MOSFETs A ug ust 1991 Package Features TO -2 2 0 A B • -5.5A and -6.5A , -1 5 0 V and -20 0 V TOP VIEW • r0s O N = 0 .8 0 and 1 .2 fl • Single Pulse Avalanche Energy Rated


    OCR Scan
    F9630, IRF9631 IRF9633 IRF9630, IRF9631, F9632 F9633 IRF9632, irf9630 IRF9632 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF120, IRF121 IRF122, IRF 123 31 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features T 0 -2 0 4 A A • 8.0A and 9.2A , 8 0 V - 100V BOTTOM VIEW • rD S on = 0 .2 7 f l and 0 .3 6 0 SOURCE • S O A is P ow er-D issip atio n Limited


    OCR Scan
    IRF120, IRF121 IRF122, PDF

    IRF9511

    Abstract: No abstract text available
    Text: H a r r is IRF9510, IRF9511 IRF 9512 IRF9513 , Avalanche Energy Rated P-Channel Power MOSFETs Ja n u a ry 1 9 9 4 Package F e a tu re s • T O -220A B -2.5A and -3.0A , -8 0 V and -100V TOP VIEW • rDS ON = 1 -2 0 and 1 .6 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan
    IRF9510, IRF9511 IRF9513 -220A -100V IRF9511, IRF9512 IRF9513 92CS-43275 PDF

    IRF123

    Abstract: IRF120 IRF1 CQ 1565 RT irf121 IRF122 RF123 IRF1Z0
    Text: Standard Power MOSFETs- IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-C HANNEL EN HANCEM ENT MODE 7.0A and 8.0A, 60V-100V


    OCR Scan
    IRF120, IRF121, IRF122, IRF123 0V-100V IRF122 IRF120 IRF1 CQ 1565 RT irf121 RF123 IRF1Z0 PDF

    Diode 188

    Abstract: APT8016DFN APT7516DFN 7516-D 47Amps
    Text: ADVANCED MIE POWER TECHNOLOGY 1 oaSTiai DÜDOS'IM S32 • I AVP ■ ADVANCED F O M fER _T-3>°h$„ I Techno lo g y O D 2> 0<2 à (fò APT8016DFN 800V 47.0A 0.16 Ï2 APT7516DFN 750V 47.0A 0.16 ¿1 0 3(2 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEtS


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    APT8016DFN APT7516DFN MIL-STD-750 Diode 188 7516-D 47Amps PDF

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


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    IRF9140 IRF9230 IRF9240 irf440 PDF

    P Channel Power MOSFET IRF

    Abstract: IRF P CHANNEL MOSFET IRF n CHANNEL MOSFET IRF P CHANNEL MOSFET D-PAK mosfet n channel irf IRF n 30v
    Text: L i t t l e F E T SERIES S O - 8 S T A N D A R D GATE 1 0 V D E V IC E LittleFET D E V IC E S V DSS ( V ) r DS(O N) 1 (A ) D EV IC E 0.030£2 6.3A RF1K49157 SO-8 N 0.060Î2 3.5A RF1K49086 SO-8 NN 30V PACKAGE 0.060Q 3.5A RF1K49221 SO-8 N 0.150Î2 2.5A


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    RF1K49157 RF1K49086 RF1K49221 RF1K49223 RF1K49224 060n/0 O-251/2 MS012 O-262/3 P Channel Power MOSFET IRF IRF P CHANNEL MOSFET IRF n CHANNEL MOSFET IRF P CHANNEL MOSFET D-PAK mosfet n channel irf IRF n 30v PDF

    IRF250R

    Abstract: free IR circuit diagram
    Text: [ 2 H A R R I S IR F 2 5 0 /2 5 1 /2 5 2 /2 5 3 IR F 2 5 0 R /2 5 1 R /2 5 2 R /2 5 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 4 A E BOTTOM VIEW • 25A and 30A, 150V - 200V • ros on = 0 .0 8 5 fl and 0 .1 2 0 fi


    OCR Scan
    IRF250, IRF251, IRF252, IRF253 IRF250R, IRF251R, IRF252R, IRF253R RE14b. IRF250R free IR circuit diagram PDF

    MOSFET IRF 630

    Abstract: IRF630 f630 IRF630R 633R
    Text: S H A R R IS IR F 630/631/632/633 IRF630R/631R/632R/633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150 V - 2 0 0 V • r 0 s ° n = 0 .4 Î Î and 0 .6 Î Î • Single Puise A valanche Energy R ated*


    OCR Scan
    IRF630R/631R/632R/633R IRF630, IRF631, IRF632, IRF633 IRF630R, IRF631R, IRF632R IRF633R MOSFET IRF 630 IRF630 f630 IRF630R 633R PDF

    Untitled

    Abstract: No abstract text available
    Text: • 43CI2271 0053=130 HARRIS A3? ■ HAS IR F330/331/332/333 IRF330R/331R/332R/333R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 4.5A and 5.5A, 350V - 400V • rDS on = 1-o fl and 1-5i^ • Single Pulse Avalanche Energy Rated*


    OCR Scan
    43CI2271 F330/331/332/333 IRF330R/331R/332R/333R IRF330, IRF331, IRF332, IRF333 IRF330R, IRF331R, IRF332R, PDF

    1RF440

    Abstract: No abstract text available
    Text: • 4 3 D5 2 7 1 0 0 5 3 Tk>fl 574 ■ Jg HARRIS HAS IR F 4 4 0 /4 4 1 /4 4 2 /4 4 3 IR F 4 4 0 R /4 4 1R /4 4 2 R /4 4 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2Û 4A A BOTTOM VIEW • 7A and 8A, 4 50 V - 500V


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    IRF440, IRF441, IRF442, IRF443 FIGURE14b. 1RF440 PDF

    circuits of IRF150

    Abstract: IRF150-152
    Text: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*


    OCR Scan
    IBM50/151/152/153 IRF150R/151R/152R/153R IRF150, IRF151, IRF152, IRF153 IRF150R, IRF151R, IRF152R, IRF153R circuits of IRF150 IRF150-152 PDF

    742r

    Abstract: F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a
    Text: 23 H A R R IS IR F740/741/742/743 IRF740R/741R/742R/743R N -Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package F e a tu re s T O -2 2 0 A B • 8A and 10A, 350V - 400V TOP VIEW • rD S °n = 0 .5 5 fi and 0.8J1 • Single Pulse Avalanche Energy Rated*


    OCR Scan
    F740/741/742/743 IRF740R/741R/74 IRF740, IRF741, IRF742, IRF743 IRF740R, IRF741R, IRF742R IRF743R 742r F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a PDF