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    VN0220N3 Search Results

    VN0220N3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN0220N3 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN0220N3 Unknown FET Data Book Scan PDF
    VN0220N3 Supertex N-Channel Enhancement-Mode Vertical DMOS Power FETs Scan PDF

    VN0220N3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    IRF-520 Mosfet

    Abstract: cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic
    Text: TN/TP Series Applications TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure


    Original     		PDF TN0524N3 IRF-520 Mosfet cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic

    ICM7555

    Abstract: TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET
    Text: TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure 2, at voltages less than the actual BVDSS rating.


    Original     		PDF TN0524N3 ICM7555 TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET

    VN0220N3

    Abstract: VN0216N2 VN0216N3 VN0216N5 VN0220N2 VN0220N5 VN02C VN0220
    Text: SUPERTEX INC S H N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information B V ^s/ O rd e r N u m b e r / P a c k a g e ^DS ON (m ax) *D(ON) (m in) T O -3 9 T O -9 2 T O -2 20 160V 60 1A VN0216N2 VN0216N3 VN 0216N5 200V 60 1A VN 0220N2 VN0220N3


    OCR Scan     		PDF fl77BEc BVD39/ O-220 VN0216N2 VN0216N3 VN0216N5 VN0220N2 VN0220N3 VN0220N5 VN0216N5 VN0220N5 VN02C VN0220

    VN0210N5

    Abstract: VN0355N5 VN0345N2 VN0350N2 VN0350N5 VN0360N5 VN0206ND VN0210N2 VN0210ND VN0216N2
    Text: - Sí s ti: f ft * f Vd s or * Vd g € & VN0206ND SUPERTEX N V Ê Vg s fê (Ta=25°C) Id Vg s th) Id s s Ig s s Pd * /CH (V) 'S (A) m (nA) Vg s (V) {m a ) Vd s (V) (V) ft 4# F Ds(on) Vd s = Vg s max min * /CH m g fs Id (oii) Ciss (V) Crss Coss ft Jfc m


    OCR Scan     		PDF VN0206ND VN0210N2 vn0210n3 VN0210N5 VN0350N5 T0-Z20 VN035QNÃ VN0355N5 T0-220 VN0355ND VN0345N2 VN0350N2 VN0360N5 VN0210ND VN0216N2

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431