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    IRF P-CHANNEL MOSFET Search Results

    IRF P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf MOSFET p-CH

    Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
    Text: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description


    Original     		PDF PD-95341 IRF5851PbF irf MOSFET p-CH IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23

    P Channel Power MOSFET IRF

    Abstract: IRF P CHANNEL MOSFET P-channel power mosfet irf IRF n CHANNEL MOSFET mosfet p channel irf MOSFET IRF 941 IRF P-Channel mosfet mosfet irf p-channel
    Text: PD- 95589 IRL3102SPbF HEXFET Power MOSFET D VDSS = 20V RDS on = 0.013Ω G • Lead-Free www.irf.com S ID = 61A 1 07/20/04 IRL3102SPbF Ω 2 www.irf.com IRL3102SPbF www.irf.com 3 IRL3102SPbF 4 www.irf.com IRL3102SPbF www.irf.com 5 IRL3102SPbF 6 www.irf.com


    Original     		PDF IRL3102SPbF EIA-418. P Channel Power MOSFET IRF IRF P CHANNEL MOSFET P-channel power mosfet irf IRF n CHANNEL MOSFET mosfet p channel irf MOSFET IRF 941 IRF P-Channel mosfet mosfet irf p-channel

    MOSFET IRF 941

    Abstract: IRF P CHANNEL MOSFET P Channel Power MOSFET IRF P-channel power mosfet irf diode 8024 K02A HEXFET D2PAK ir 601 h IRF n CHANNEL MOSFET IRL3102SPBF
    Text: PD- 95589 IRL3102SPbF HEXFET Power MOSFET D VDSS = 20V RDS on = 0.013Ω G • Lead-Free www.irf.com S ID = 61A 1 07/20/04 IRL3102SPbF Ω 2 www.irf.com IRL3102SPbF www.irf.com 3 IRL3102SPbF 4 www.irf.com IRL3102SPbF www.irf.com 5 IRL3102SPbF 6 www.irf.com


    Original     		PDF IRL3102SPbF EIA-418. MOSFET IRF 941 IRF P CHANNEL MOSFET P Channel Power MOSFET IRF P-channel power mosfet irf diode 8024 K02A HEXFET D2PAK ir 601 h IRF n CHANNEL MOSFET IRL3102SPBF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60251 IRS2112 -1,-2,S PbF HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V


    Original     		PDF PD60251 IRS2112 10Part 14-Lead IRS2112PbF IRS2112-1PbF 16-Lead IRS2112-2PbF

    MOSFET IRF 630

    Abstract: No abstract text available
    Text: vx-b’J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S Case : E-pack 1 i : iate 2 4 1 IIraln 3 : Source [Unit : mm] ‘I - 1; -‘J 1 -7 $, &I 11 2 3-, P12, 7-l Q f ‘g ( 7’: $ 1 1 Lead type is available. See P. 12, 7-l


    Original     		PDF

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    P-Channel MOSFET 800v

    Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
    Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International


    Original     		PDF IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode

    samco-i inverter manual

    Abstract: samco-i inverter diagram IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION SAMCO-vm05 5kw inverter circuit diagram samco-i manual 400W sine wave inverter circuit diagram samco-i inverter 1.5kw 500 kva inverter diagrams
    Text: NEW-CONCEPT TOP-CLASS INVERTERS FEATURING COMPACT DESIGN & LIGHT WEIGHT Actual Size SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Birth of the new SAMCO-e Series of inverters that offer outstanding operability and multiple functions in a compact body


    Original     		PDF k1-V11EA1-0603020ND samco-i inverter manual samco-i inverter diagram IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION SAMCO-vm05 5kw inverter circuit diagram samco-i manual 400W sine wave inverter circuit diagram samco-i inverter 1.5kw 500 kva inverter diagrams

    charge pump relay drive circuit

    Abstract: IRF P CHANNEL MOSFET pioneer mosfet IRF-520 Mosfet VN2210N3 ICM7555 TN0604N3 TN2524N8 VN2224 VN2224N3
    Text: TN/TP Series Application Note AN–D2 Low-Threshold MOSFETs: Structure, Performance and Applications Since an increasing amount of attention is being focused on system interface from low-level logic, the need for higher current and/or low on-resistance at drive levels of only 3-5 volts has


    Original     		PDF

    IRF-520 Mosfet

    Abstract: cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic
    Text: TN/TP Series Applications TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure


    Original     		PDF TN0524N3 IRF-520 Mosfet cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic

    ICM7555

    Abstract: TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET
    Text: TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure 2, at voltages less than the actual BVDSS rating.


    Original     		PDF TN0524N3 ICM7555 TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET

    EIA-541

    Abstract: irf MOSFET p-CH IRF7507PBF
    Text: PD - 95218 IRF7507PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 N-CHANNEL MOSFET


    Original     		PDF IRF7507PbF EIA-481 EIA-541. EIA-541 irf MOSFET p-CH IRF7507PBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95218 IRF7507PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 G1 S2 G2 N-CHANNEL MOSFET


    Original     		PDF IRF7507PbF EIA-481 EIA-541.

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


    OCR Scan     		PDF O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet

    irf9630

    Abstract: IRF9632 IRF9631
    Text: HARRIS IR F9630, IRF9631 IRF 9632, IRF9633 Avalanche Energy Rated P-Channel Power MOSFETs A ug ust 1991 Package Features TO -2 2 0 A B • -5.5A and -6.5A , -1 5 0 V and -20 0 V TOP VIEW • r0s O N = 0 .8 0 and 1 .2 fl • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF F9630, IRF9631 IRF9633 IRF9630, IRF9631, F9632 F9633 IRF9632, irf9630 IRF9632

    irf840 rf

    Abstract: THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332
    Text: THOnSON/ DISTRIBUTOR SflE 5 • TDEb&TB 0005707 ■ TCSK - Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued P a cka g e ^pr i » [j M a x im u m R a tin g s bvdss >d s (V) (A) rD S(O N ) O HM S 400 0 .3 0 0.40 0.40 0.50 1.15 1.30 1.35 1.50


    OCR Scan     		PDF 102bfi73 to-204 to-205 T0-220 O-247 IRF322 IRF320 IRF332 IRF330 IRF342 irf840 rf THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332

    IRF9511

    Abstract: No abstract text available
    Text: H a r r is IRF9510, IRF9511 IRF 9512 IRF9513 , Avalanche Energy Rated P-Channel Power MOSFETs Ja n u a ry 1 9 9 4 Package F e a tu re s • T O -220A B -2.5A and -3.0A , -8 0 V and -100V TOP VIEW • rDS ON = 1 -2 0 and 1 .6 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF9510, IRF9511 IRF9513 -220A -100V IRF9511, IRF9512 IRF9513 92CS-43275

    Untitled

    Abstract: No abstract text available
    Text: IRF120, IRF121 IRF122, IRF 123 31 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features T 0 -2 0 4 A A • 8.0A and 9.2A , 8 0 V - 100V BOTTOM VIEW • rD S on = 0 .2 7 f l and 0 .3 6 0 SOURCE • S O A is P ow er-D issip atio n Limited


    OCR Scan     		PDF IRF120, IRF121 IRF122,

    F9530

    Abstract: 9533E IRF9530
    Text: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF9530, IRF9533 -100V IRF9531, IRF9532 IRF9533 IRF9532, F9533 92CS-43327 F9530 9533E IRF9530

    IRF123

    Abstract: IRF120 IRF1 CQ 1565 RT irf121 IRF122 RF123 IRF1Z0
    Text: Standard Power MOSFETs- IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-C HANNEL EN HANCEM ENT MODE 7.0A and 8.0A, 60V-100V


    OCR Scan     		PDF IRF120, IRF121, IRF122, IRF123 0V-100V IRF122 IRF120 IRF1 CQ 1565 RT irf121 RF123 IRF1Z0

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


    OCR Scan     		PDF IRF9140 IRF9230 IRF9240 irf440

    Diode 188

    Abstract: APT8016DFN APT7516DFN 7516-D 47Amps
    Text: ADVANCED MIE POWER TECHNOLOGY 1 oaSTiai DÜDOS'IM S32 • I AVP ■ ADVANCED F O M fER _T-3>°h$„ I Techno lo g y O D 2> 0<2 à (fò APT8016DFN 800V 47.0A 0.16 Ï2 APT7516DFN 750V 47.0A 0.16 ¿1 0 3(2 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEtS


    OCR Scan     		PDF APT8016DFN APT7516DFN MIL-STD-750 Diode 188 7516-D 47Amps

    P Channel Power MOSFET IRF

    Abstract: IRF P CHANNEL MOSFET IRF n CHANNEL MOSFET IRF P CHANNEL MOSFET D-PAK mosfet n channel irf IRF n 30v
    Text: L i t t l e F E T SERIES S O - 8 S T A N D A R D GATE 1 0 V D E V IC E LittleFET D E V IC E S V DSS ( V ) r DS(O N) 1 (A ) D EV IC E 0.030£2 6.3A RF1K49157 SO-8 N 0.060Î2 3.5A RF1K49086 SO-8 NN 30V PACKAGE 0.060Q 3.5A RF1K49221 SO-8 N 0.150Î2 2.5A


    OCR Scan     		PDF RF1K49157 RF1K49086 RF1K49221 RF1K49223 RF1K49224 060n/0 O-251/2 MS012 O-262/3 P Channel Power MOSFET IRF IRF P CHANNEL MOSFET IRF n CHANNEL MOSFET IRF P CHANNEL MOSFET D-PAK mosfet n channel irf IRF n 30v