Untitled
Abstract: No abstract text available
Text: IRF1010 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V) I(D) Max. (A)75# I(DM) Max. (A) Pulsed I(D)53 @Temp (øC)100# IDM Max (@25øC Amb)300# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55õ
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IRF1010
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IRF1010 E DATASHEET
Abstract: irf1010 irf1010 applications irfz44e
Text: PD - 9.1671A IRFZ44E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 60V RDS on = 0.023Ω ID = 48A Description Fifth Generation HEXFETs from International Rectifier
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IRFZ44E
O-220
IRF1010 E DATASHEET
irf1010
irf1010 applications
irfz44e
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IRF9540N
Abstract: BU 11A
Text: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω
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IRF9540N
-100V
O-220
IRF9540N
BU 11A
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IRF4905
Abstract: IRF4905 P-channel power irf1010 applications IRF1010 E IRF1010
Text: Previous Datasheet Index Next Data Sheet PD 9.1280A IRF4905 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
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IRF4905
IRF4905
IRF4905 P-channel power
irf1010 applications
IRF1010 E
IRF1010
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IRF5210
Abstract: irf1010 applications IRF1010
Text: Previous Datasheet Index Next Data Sheet PD 9.1434 IRF5210 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
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IRF5210
-100V
IRF5210
irf1010 applications
IRF1010
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irf 44 n
Abstract: IRF Power MOSFET code marking "thermal via" PCB D2PAK IRF MOSFET driver 9936 B TO-220AB transistor package IRF1010 TO-262 MOSFET 2F 1 marking 9936
Text: PD - 93936B IRF3706 IRF3706S IRF3706L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS
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93936B
IRF3706
IRF3706S
IRF3706L
O-220AB
O-262
IRF3706/3706S/3706L
irf 44 n
IRF Power MOSFET code marking
"thermal via" PCB D2PAK
IRF MOSFET driver
9936 B
TO-220AB transistor package
IRF1010
TO-262 MOSFET
2F 1 marking
9936
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IRfl23
Abstract: IRF1010 IRL2310
Text: Previous Datasheet Index Next Data Sheet PD - 9.1275 IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V GS= 4.5V & 10V
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IRL2310
IRF1010
IRfl23
IRF1010
IRL2310
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irf1010
Abstract: IRfl23 IRL2310
Text: PD - 9.1275 IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V GS= 4.5V & 10V 175°C Operating Temperature VDSS = 100V
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IRL2310
O-220
IRF1010
irf1010
IRfl23
IRL2310
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mosfet IRFZ34N
Abstract: IRFZ34N IRFZ34N MOSFET irfz34n equivalent for irfz34n lt 200 diode driver IRF1010 INTERNATIONAL RECTIFIER B469 irfz34n mosfets
Text: PD - _ IRFZ34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.040 Ω ID = 26A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing
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IRFZ34N
O-220
O-220AB.
O-220AB
IRF1010
mosfet IRFZ34N
IRFZ34N
IRFZ34N MOSFET
irfz34n equivalent
for irfz34n
lt 200 diode driver
IRF1010
INTERNATIONAL RECTIFIER
B469
irfz34n mosfets
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IRF1010
Abstract: IRL630
Text: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description
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IRL630
O-220
IRF1010
IRF1010
IRL630
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irf1010
Abstract: irf1010 applications irf1010 MOSFET L377
Text: 4Ô55452 0 0 1 4 7 ^ 4 AST International k Rectifier IINR PD-9.814 IRF1010 HEXFET® Power MOSFET INTERNATIONAL R ECTIFIER Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching
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IRF1010
O-220
irf1010 applications
irf1010 MOSFET
L377
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1rf1010
Abstract: J35A IRF1010S IRF1010 irf1010 MOSFET 1RF10
Text: PD-9.814 International K R e ctifie r IR F 1 Ö 10 HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling
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IRF10Ã
O-220
1rf1010
J35A
IRF1010S
IRF1010
irf1010 MOSFET
1RF10
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84a DIODE
Abstract: IRF9530* p-channel power MOSFET irf9530N irf1010 applications international rectifier p0
Text: I PD - 9.1482B International XQR Rectifier IRF9530N PRELIMINARY HEXFET* Power MOSFET • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching VDSS = -100V ^ D S o n • P-Channel
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1482B
IRF9530N
-100V
O-220
84a DIODE
IRF9530* p-channel power MOSFET
irf9530N
irf1010 applications
international rectifier p0
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Untitled
Abstract: No abstract text available
Text: P D - 9 .1 6 9 7 A International I9R Rectifier IRL3402 PREUMINAR HEXFET Power MOSFET • • • • Advanced Process Technology Optimized for 4.5V -7.0V Gate Drive Ideal for CPU Core DC-DC Converter Fast Switching V dss - 20V ^DS on = 0.01 Q Id = Description
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IRL3402
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Untitled
Abstract: No abstract text available
Text: PD 9.1623 International IGR Rectifier IRF3315 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDss = 150 V ^D S c n = Description 0.082Q
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IRF3315
O-220
554S5
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IRF3710
Abstract: No abstract text available
Text: PD 9.1309B International IGR Rectifier IRF3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V q s s = 100V ^D S o n = Description
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1309B
IRF3710
IRF3710
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IRL3705N
Abstract: No abstract text available
Text: PD - 9.1370B International IO R Rectifier IRL3705N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description
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1370B
IRL3705N
O-220
IRL3705N
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Untitled
Abstract: No abstract text available
Text: P D -9.1341 International Hk ]Rectifier IRF540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V ^DS on = 0.052Q Id = Description
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IRF540N
T0-220
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ML555
Abstract: c871 marking code 7Gs h51 diode IQR 2400 IRF1010 IRF2525 JISR9246 SS452 002B3
Text: P D 9.1641 International Iö R Rectifier IRF2525 PRELIMINARY HEXFET2*Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 150°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = R o S o n = Description Id =
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O-220
ML555
c871
marking code 7Gs
h51 diode
IQR 2400
IRF1010
IRF2525
JISR9246
SS452
002B3
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data IRLZ44N
Abstract: IRLZ44N IQR 2400 IRF1010 ISR9246
Text: PD - 9.1346B International IOR Rectifier IR LZ 44N HEXFET Power MOSFET • • • • • • Logic-Level G ate Drive A dvanced Process Technology Dynam ic dv/dt Rating 175 °C Operating Tem perature Fast Switching Fully Avalanche Rated V dss = 55 V R ü S o n = 0 . 0 2 2 Q .
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1346B
IRLZ44N
O-220
data IRLZ44N
IRLZ44N
IQR 2400
IRF1010
ISR9246
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Untitled
Abstract: No abstract text available
Text: PD - 9.1348A International IOR Rectifier IRL530N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on
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IRL530N
S5452
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IRF9Z34N
Abstract: No abstract text available
Text: International I R Rectifier • • • • • • PD - 9.1485A IRF9Z34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated VDSS = -55V 0.10Q |D = -17A
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IRF9Z34N
O-220
IRF9Z34N
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Untitled
Abstract: No abstract text available
Text: PD - 9.1357A International IOR Rectifier IRLZ24N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level G ate Drive A dvanced Process Technology Dynam ic dv/dt Rating 175°C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 5 5 V
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IRLZ24N
4A55452
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Untitled
Abstract: No abstract text available
Text: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n =
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IRF9Z24N
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