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    IRL630 Price and Stock

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    Vishay Siliconix IRL630SPBF

    MOSFET N-CH 200V 9A D2PAK
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    DigiKey IRL630SPBF Tube 8,697 1
    • 1 $3.35
    • 10 $3.35
    • 100 $1.5156
    • 1000 $1.14098
    • 10000 $1.0625
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    Quest Components IRL630SPBF 28
    • 1 $1.75
    • 10 $1.61
    • 100 $1.4
    • 1000 $1.4
    • 10000 $1.4
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    Vishay Siliconix IRL630PBF-BE3

    MOSFET N-CH 200V 9A TO220AB
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    DigiKey IRL630PBF-BE3 Tube 930 1
    • 1 $3.08
    • 10 $3.08
    • 100 $1.383
    • 1000 $1.12004
    • 10000 $1.12004
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    Vishay Siliconix IRL630

    MOSFET N-CH 200V 9A TO220AB
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    onsemi IRL630A

    MOSFET N-CH 200V 9A TO220-3
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    Vishay Siliconix IRL630S

    MOSFET N-CH 200V 9A D2PAK
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    DigiKey IRL630S Tube 1,000
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    • 1000 $2.525
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    IRL630 Datasheets (33)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    PDF Size
    Page count
    IRL630
    International Rectifier HEXFET Power Mosfet Original PDF 283.06KB 8
    IRL630
    International Rectifier HEXFET Power MOSFET Original PDF 147.25KB 8
    IRL630
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRL630
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A TO-220AB Original PDF 9
    IRL630
    Fairchild Semiconductor Advanced Power MOSFET Scan PDF 155.04KB 6
    IRL630
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 200V, 9A, Pkg Style TO-220AB Scan PDF 50.01KB 1
    IRL630
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 41.32KB 1
    IRL630
    Unknown FET Data Book Scan PDF 46.6KB 1
    IRL630
    Samsung Electronics N-Channel Logic Level MOSFETS Scan PDF 248.06KB 5
    IRL630A
    Fairchild Semiconductor Advanced Power MOSFET Original PDF 227.37KB 7
    IRL630A
    Fairchild Semiconductor Advanced Power MOSFET Scan PDF 155.35KB 6
    IRL630A_NL
    Fairchild Semiconductor 200V N-Channel Logic Level A-FET / Substitute of IRL630 Original PDF 227.36KB 7
    IRL630L
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 41.32KB 1
    IRL630PBF
    International Rectifier HEXFET Power MOSFET Original PDF 1.36MB 8
    IRL630PBF
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A TO-220AB Original PDF 9
    IRL630PBF-BE3
    Vishay Siliconix MOSFET N-CH 200V 9A TO220AB Original PDF 2.33MB
    IRL630S
    International Rectifier HEXFET Power MOSFET Original PDF 172.34KB 8
    IRL630S
    International Rectifier HEXFET Power Mosfet Original PDF 309.52KB 8
    IRL630S
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRL630S
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original PDF 9

    IRL630 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Contextual Info: IRL630A A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive 0.4Q CO > a ♦ Rugged Gate Oxide Technology II ^DS on = ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


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    IRL630A O-220 PDF

    Contextual Info: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive


    Original
    IRL630S, SiHL630S 2002/95/EC O-263) 11-Mar-11 PDF

    Contextual Info: IRL630S_RC, SiHL630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    IRL630S SiHL630S AN609, 1561m 1405m 7558m 9961m 8166m PDF

    Contextual Info: IRL630A Advanced Power MOSFET FEATURES b v dss Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ V OS = 200V ■ Lower RDS(0N) : 0.335 « (Typ.) 0.4 O


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    IRL630A 003b32fl O-220 7Tb4142 DD3b33D PDF

    Contextual Info: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description


    Original
    IRL630 O-220 08-Mar-07 PDF

    IRF1010

    Abstract: IRL630
    Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V


    Original
    IRL630 O-220 a9246 IRF1010 IRL630 PDF

    IRL630A

    Contextual Info: $GYDQFHG 3RZHU 026 7 IRL630A FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 9 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    Original
    IRL630A O-220 IRL630A PDF

    IRL630

    Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRL630/IRL631 FEATURES • L o w e r R d s ON • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    IRL630/IRL631 O-220 IRL630 IRL631 PDF

    Contextual Info: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    IRL630, SiHL630 O-220AB 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive


    Original
    IRL630S, SiHL630S 2002/95/EC O-263) 11-Mar-11 PDF

    IRF1010

    Abstract: IRL630
    Contextual Info: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description


    Original
    IRL630 O-220 IRF1010 IRF1010 IRL630 PDF

    Contextual Info: $GYDQFHG 3RZHU 026 7 IRL630 FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 9 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    Original
    IRL630 O-220 PDF

    AN-994

    Abstract: IRL630S SMD-220
    Contextual Info: PD - 9.1254 IRL630S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at VGS = 4V & 5V 150°C Operating Temperature VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A


    Original
    IRL630S SMD-220 12-Mar-07 AN-994 IRL630S PDF

    Contextual Info: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: PD- 95590 IRL630SPbF • Lead-Free Document Number: 91304 07/20/04 www.vishay.com 1 IRL630SPbF Document Number: 91304 www.vishay.com 2 IRL630SPbF Document Number: 91304 www.vishay.com 3 IRL630SPbF Document Number: 91304 www.vishay.com 4 IRL630SPbF Document Number: 91304


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    IRL630SPbF 12-Mar-07 PDF

    Contextual Info: PD- 95756 IRL630PbF • Lead-Free Document Number: 91303 8/24/04 www.vishay.com 1 IRL630PbF Document Number: 91303 www.vishay.com 2 IRL630PbF Document Number: 91303 www.vishay.com 3 IRL630PbF Document Number: 91303 www.vishay.com 4 IRL630PbF Document Number: 91303


    Original
    IRL630PbF O-220AB 12-Mar-07 PDF

    diode marking code 421

    Contextual Info: PD- 95590 IRL630SPbF • Lead-Free www.irf.com 1 07/20/04 IRL630SPbF 2 www.irf.com IRL630SPbF www.irf.com 3 IRL630SPbF 4 www.irf.com IRL630SPbF www.irf.com 5 IRL630SPbF 6 www.irf.com IRL630SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original
    IRL630SPbF EIA-418. diode marking code 421 PDF

    Contextual Info: IRL630 A d v a n c e d Power MOSFET FEATURES 200 V 0.4Q > Rugged G ate O xide T e ch n o lo g y CO ^D S o n = a ♦ = Logic-Level G ate Drive ♦ A va la n ch e Rugged T e ch n o lo g y II ♦ BVdss ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge


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    IRL630 O-220 PDF

    IRL630S

    Abstract: Diode 3D 54
    Contextual Info: IRL630S A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 9 A 200 V 0.4Î2 ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


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    IRL630S IRL630S Diode 3D 54 PDF

    IRL630A

    Abstract: diode rg62 018
    Contextual Info: IRL630A A d vanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^DS on = 0.4Î2 ♦ Rugged Gate Oxide Technology lD = 9 A ♦ Logic-Level Gate Drive 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


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    IRL630A IRL630A diode rg62 018 PDF

    SiHL630S

    Contextual Info: IRL630S, SIHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


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    IRL630S, SIHL630S SMD-220 18-Jul-08 SiHL630S PDF

    Contextual Info: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original
    IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    1RL630A

    Abstract: IRL630
    Contextual Info: IRL630A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVDSs Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A M ax. @ VDS= 200V


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    IRL630A O-220 1RL630A IRL630 PDF

    SIHL630S

    Abstract: IRL630S SiHL630S-E3
    Contextual Info: IRL630S, SIHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original
    IRL630S, SIHL630S O-263) 18-Jul-08 SIHL630S IRL630S SiHL630S-E3 PDF