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    Vishay Siliconix SIHL630STRL-GE3

    MOSFET N-CH 200V 9A D2PAK
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    DigiKey SIHL630STRL-GE3 Reel 800
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    Vishay Intertechnologies SIHL630STRL-GE3

    LOGIC MOSFET N-CHANNEL 200V - Tape and Reel (Alt: SIHL630STRL-GE3)
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    Avnet Americas SIHL630STRL-GE3 Reel 800
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    TME SIHL630STRL-GE3 1
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    EBV Elektronik SIHL630STRL-GE3 13 Weeks 800
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    SIHL630 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHL630STRL-GE3 Vishay Siliconix MOSFET N-CH 200V 9A D2PAK Original PDF

    SIHL630 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive


    Original     		PDF IRL630S, SiHL630S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRL630S_RC, SiHL630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRL630S SiHL630S AN609, 1561m 1405m 7558m 9961m 8166m

    Untitled

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 O-220AB 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive


    Original     		PDF IRL630S, SiHL630S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRL630

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRL630

    SiHL630S

    Abstract: No abstract text available
    Text: IRL630S, SIHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL630S, SIHL630S SMD-220 18-Jul-08 SiHL630S

    Untitled

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SIHL630S

    Abstract: IRL630S SiHL630S-E3
    Text: IRL630S, SIHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL630S, SIHL630S O-263) 18-Jul-08 SIHL630S IRL630S SiHL630S-E3

    IRL630

    Abstract: SiHL630 SiHL630-E3
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 V RDS(on) (Ω) VGS = 5 V Qg (Max.) (nC) • Repetitive Avalanche Rated 0.40 40 RoHS* COMPLIANT Qgs (nC) 5.5 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRL630, SiHL630 O-220 O-220 18-Jul-08 IRL630 SiHL630-E3

    IRL630S

    Abstract: SiHL630S SiHL630S-E3
    Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL630S, SiHL630S O-263) 2002/95/EC 11-Mar-11 IRL630S SiHL630S-E3

    IRL630STRRPBF

    Abstract: No abstract text available
    Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive


    Original     		PDF IRL630S, SiHL630S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRL630STRRPBF

    Untitled

    Abstract: No abstract text available
    Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive


    Original     		PDF IRL630S, SiHL630S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL630S, SiHL630S 2002/95/EC O-263) 18-Jul-08

    IRL630

    Abstract: SiHL630 SiHL630-E3
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 O-220 O-220 18-Jul-08 IRL630 SiHL630-E3

    Untitled

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    60347

    Abstract: No abstract text available
    Text: IRL630_RC, SiHL630_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRL630 SiHL630 AN609, CONFIGURATI-10 4828m 1543m 8449m 8851m 60347

    Untitled

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 V RDS(on) (Ω) VGS = 5 V Qg (Max.) (nC) • Repetitive Avalanche Rated 0.40 40 RoHS* COMPLIANT Qgs (nC) 5.5 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRL630, SiHL630 O-220 O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 2002/95/EC O-220AB O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A