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    IRF250 MOSFET Search Results

    IRF250 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRF250 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AVALANCHE TRANSISTOR

    Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
    Text: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original     		PDF IRF250 O-204AE TB334 TA09295. AVALANCHE TRANSISTOR transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR

    IRF250

    Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
    Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International


    Original     		PDF 90338E IRF250 JANTX2N6766 JANTXV2N6766 O-204AA/AE) MIL-PRF-19500/543] an52-7105 IRF250 irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247

    Untitled

    Abstract: No abstract text available
    Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International


    Original     		PDF 90338E IRF250 JANTX2N6766 JANTXV2N6766 O-204AA/AE) MIL-PRF-19500/543] p252-7105

    IRF250

    Abstract: mosfet 30a 200v 200mJ irf250 datasheet mosfet 30A transistor irf250 330mh avalanche diode 30A mosfet 50v 30a
    Text: IRF250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)


    Original     		PDF IRF250 state3500 300ms, IRF250 mosfet 30a 200v 200mJ irf250 datasheet mosfet 30A transistor irf250 330mh avalanche diode 30A mosfet 50v 30a

    Untitled

    Abstract: No abstract text available
    Text: IRF250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)


    Original     		PDF IRF250 300ms,

    Untitled

    Abstract: No abstract text available
    Text: IRF250 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)19 @Temp (øC)100 IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55


    Original     		PDF IRF250

    IRF224

    Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
    Text: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250


    OCR Scan     		PDF IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF224 irf244 THOMSON DISTRIBUTOR 58e d IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221

    Untitled

    Abstract: No abstract text available
    Text: if* ? S IRF250, IRF251, IRF252, IRF253 Semiconductor y y 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 25A and 30A, 150V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF250, IRF251, IRF252, IRF253 RF251,

    irf260

    Abstract: IRF260 N IRF250 MOSFET IRF250 IRF251 IRF252 IRF253 irf26
    Text: 3875081 D1 G E SOLID Ï e § STATE BÔ 7S DB 1 0 D l f l E c]4 fi File Number 0 1E 18294 - - 1825 D aianaara kower MOSFETs IRF250, IRF251, IRF252, IRF253 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF250, IRF251, IRF252, IRF253 92CS-3374I IRF252 75BVOSS 08TAIN irf260 IRF260 N IRF250 MOSFET IRF250 IRF251 IRF253 irf26

    TO-204AE

    Abstract: No abstract text available
    Text: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600


    OCR Scan     		PDF IRFP441 IRF442 IRF443 IRF840 IRF841 IRF842 IRF843 2N6763 2N6764 IRF150 TO-204AE

    IRF250

    Abstract: transistor irf250 IRF252 IRF250 power MOSFET IRF251 Application of irf250 irfz52 IRF253 1RF252 he250
    Text: •Standard Power MOSFETs File N u m b e r 1825 IRF250, IRF251, IRF252, IRF253 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 25 A and 30 A, 150 V - 200 V rDs on = 0.085 fi and 0.120 fi


    OCR Scan     		PDF IRF250, IRF251, IRF252, IRF253 92CS-3374I IRF252 IRF2I53 IRF250 transistor irf250 IRF250 power MOSFET IRF251 Application of irf250 irfz52 IRF253 1RF252 he250

    IRF250

    Abstract: MOSFET IRF250 IRF250 power MOSFET 1RF250 5104 mosfet b16a diode IRF250 MOSFET IRF250 "on semiconductor" IRF251 IRF252
    Text: 7964142 Tñ SAMSUNG SEMICONDUCTOR IN C 9 8 D 051 O 4 DE | ? c]t.4145 DDDSIDM 4 I p T “ 3 7- N-CHANNEL POWER MOSFETS IRF250/251/252/253 FEATURES Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


    OCR Scan     		PDF IRF250/251/252/253 IRF250 IRF251 IRF252 IRF253 MOSFET IRF250 IRF250 power MOSFET 1RF250 5104 mosfet b16a diode IRF250 MOSFET IRF250 "on semiconductor"

    Untitled

    Abstract: No abstract text available
    Text: nil Étti IN I SEM E IRF250 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 200V 30A V DSS ID(cont) 0.085Q ^D S (on) FEATURES M * 20.32 (0.800) 118.80 a an in ia < w (0.740) dia. • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ • SIMPLE DRIVE REQUIREMENTS


    OCR Scan     		PDF IRF250 200mJ Dra20

    IRF250

    Abstract: F25-3
    Text: 7964142 Tñ S AM S U N G DE | ? c] t . 4 1 4 5 S E M I CONDUCTOR DDDS1DM 4 INC 9 8D 0 51 0 4 0 T “ 3 7- N-CHANNEL POWER MOSFETS I IRF250/251 /252/253 FEA TU R E S Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF IRF250/251 IRF251 200V150V 00GS435 F--13 IRF250 F25-3

    IRF250

    Abstract: IRF252
    Text: HE 0 I 4ÖSS45S G G C m i a Data Sheet No. PD-9.321H ö I INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF250 IRF251 IRF252 IRF253 N-CHANNEL Product Summary 200 Volt, 0.085 Ohm HEXFET


    OCR Scan     		PDF SS45S T-39-13 IRF250 IRF251 IRF252 IRF253 O-204AE IRF250, IRF251, IRF252,

    IRF250

    Abstract: IRF250 motorola IRF250 power MOSFET MOSFET IRF250 IRF250.253
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF250 IRF251 IRF252 IRF253 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Pow er FETs are desig n ed fo r lo w vo lta g e , h ig h speed p o w e r s w itc h in g a pp licatio n s


    OCR Scan     		PDF IRF250 IRF251 IRF252 IRF253 IRF251. IRF250 motorola IRF250 power MOSFET MOSFET IRF250 IRF250.253

    IRF250 power MOSFET

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF250 P ow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S T h is TM O S P ow er FET is d e sig ned fo r lo w v o lta g e , h ig h speed p o w e r s w itc h in g a p p lic a tio n s such as s w itc h in g re g u la to rs , c o n v e rte rs , sole n o id


    OCR Scan     		PDF IRF250 97A-05 O-204AE IRF250 power MOSFET

    IRFP250

    Abstract: IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET
    Text: IRFP250/251/252/253 IRF250/251/252/253 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s ON Im p ro ve d in d u c tiv e ru g g e d n e s s F ast s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e


    OCR Scan     		PDF IRFP250/251/252/253 IRF250/251/252/253 IRFP250/IRF250 IRFP251 /IRF251 IRFP252/IRF252 IRFP253/IRF253 IRFP250 IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET

    IRF150

    Abstract: IRF250 irf054 IRF350
    Text: 1995 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR N-CHANNEL HERMETIC SURFACE MOUNT POWER MOSFETS TYPE NUMBER BVDSS DRAIN TO SOURCE BREAKDOWN VOLTAGE VOLTS <D CONTINUOUS DRAIN CURRENT (AMPS) PD MAXIMUM POWER DISSIPATION (WATTS) r DS (ON) STATIC DRAIN TO SOURCE ON


    OCR Scan     		PDF SHD2301 SHD2191 SHD2181 SHD2181A SHD2181B SHD2302 SHD2192 SHD2182 SHD2182A SHD2182B IRF150 IRF250 irf054 IRF350

    71 DT4

    Abstract: SHD2251 IRFY044 IRFY140 IRFY240 IRFY340 IRFY440 SHD2261 SHD2262 SHD2263
    Text: 1997 • SHORT FORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE ~ ~ CONTINUOUS DRAIN CURRENT MAXIMUM POWER DISSIPATION 'd PD 60 100 200 400 500 800 900 1000 100 100 100 200


    OCR Scan     		PDF O-254, O-257) SHD2261 IRFY044 SHD2262 IRFY140 SHD2263 IRFY240 SHD2264 IRFY340 71 DT4 SHD2251 IRFY044 IRFY140 IRFY240 IRFY340 IRFY440

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


    OCR Scan     		PDF IRF9140 IRF9230 IRF9240 irf440

    transistor irf250

    Abstract: IRF251 IRF250..251 D86FN2 25 fmr 160 IRF250 C063
    Text: M U T FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF250.251 D86FN2.M2 30 AMPERES


    OCR Scan     		PDF IRF250 D86FN2 Excell00 00A//US, transistor irf250 IRF251 IRF250..251 25 fmr 160 C063

    IRF250R

    Abstract: free IR circuit diagram
    Text: [ 2 H A R R I S IR F 2 5 0 /2 5 1 /2 5 2 /2 5 3 IR F 2 5 0 R /2 5 1 R /2 5 2 R /2 5 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 4 A E BOTTOM VIEW • 25A and 30A, 150V - 200V • ros on = 0 .0 8 5 fl and 0 .1 2 0 fi


    OCR Scan     		PDF IRF250, IRF251, IRF252, IRF253 IRF250R, IRF251R, IRF252R, IRF253R RE14b. IRF250R free IR circuit diagram

    IRF series

    Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
    Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs


    OCR Scan     		PDF