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Infineon Technologies AG IRF2807L MOSFET N-CH 75V 82A TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF2807L	Tube			50	1 - 10 - 100 $2.4472 1000 $2.4472 10000 $2.4472	Buy Now
International Rectifier IRF2807L MOSFET Transistor, N-Channel, TO-262AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRF2807L		6			1 $26.1926 10 $26.1926 100 $26.1926 1000 $26.1926 10000 $26.1926	Buy Now

IRF2807L Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRF2807L		International Rectifier	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF2807L with Standard Packaging		Original	PDF
IRF2807L		International Rectifier	HEXFET Power Mosfet		Original	PDF
IRF2807L		International Rectifier	HEXFET Power MOSFET		Original	PDF
IRF2807L		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
IRF2807LPBF		International Rectifier	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF2807L with Lead Free Packaging		Original	PDF
IRF2807LPBF		International Rectifier			Original	PDF

IRF2807L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
60V Single N-Channel HEXFET Power MOSFET in a HEX Abstract: AN-994 IRF2807L irf2807s Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ	Original	PDF	IRF2807SPbF IRF2807LPbF EIA-418. 60V Single N-Channel HEXFET Power MOSFET in a HEX AN-994 IRF2807L irf2807s
AN-994 Abstract: IRF2807L IRF2807S Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International	Original	PDF	IRF2807S IRF2807L AN-994 IRF2807L IRF2807S
43a 504 Abstract: marking code 43a AN-994 IRF2807L Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ	Original	PDF	IRF2807SPbF IRF2807LPbF EIA-418. 43a 504 marking code 43a AN-994 IRF2807L
Untitled Abstract: No abstract text available Text: IRF2807S IRF2807L Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l TO-262 IRF2807L D2Pak IRF2807S l Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve	Original	PDF	IRF2807S IRF2807L O-262
Untitled Abstract: No abstract text available Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International	Original	PDF	IRF2807S IRF2807L
mosfet k 61 y1 Abstract: IRF2807 AN-994 IRF2807L IRF2807S Text: PD - 91518A IRF2807S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF2807S Low-profile through-hole (IRF2807L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS(on) = 0.013Ω G ID = 82A	Original	PDF	1518A IRF2807S/L IRF2807S) IRF2807L) mosfet k 61 y1 IRF2807 AN-994 IRF2807L IRF2807S
Untitled Abstract: No abstract text available Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ	Original	PDF	IRF2807SPbF IRF2807LPbF EIA-418.
marking 43a Abstract: AN-994 IRF2807L IRF2807S Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International	Original	PDF	IRF2807S IRF2807L marking 43a AN-994 IRF2807L IRF2807S
43a 504 pcb mounted Abstract: 43a 504 m 60 n 03 g10 AN-994 Text: IRF2807S/IRF2807L Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance	Original	PDF	IRF2807S/IRF2807L 43a 504 pcb mounted 43a 504 m 60 n 03 g10 AN-994
irf510 switch Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215 Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.	Original	PDF	O-262 O-220 IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 Super220TM O-247 irf510 switch IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	PDF	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
IRFIBC44LC Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510 Text: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219	Original	PDF
IRF1010E Abstract: irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606 Text: HEXFET Power MOSFETs www.irf.com ID ID V BR DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (Ω ) (°C/W)	Original	PDF	IRLML2402* IRLML2803 IRLML6302* IRLML5103 IRL3303L IRL3103L IRL2203NL IRL3803L IRLZ24NL IRLZ34NL IRF1010E irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606

SD 1029 MOSFET Abstract: diode LT 42 Text: PD -9.1518 International IÖR Rectifier IRF2807S/L PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated	OCR Scan	PDF	IRF2807S/L IRF2807S) IRF2807L) SD 1029 MOSFET diode LT 42