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    IRF450 TRANSISTOR Search Results

    IRF450 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF450 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International


    Original     		PDF 90330F IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) temper252-7105

    Untitled

    Abstract: No abstract text available
    Text: PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF450 500V ID 0.400Ω 12A The HEXFET ®technology is the key to International


    Original     		PDF PD-90330G O-204AA/AE) IRF450 JANTX2N6770 JANTXV2N6770 IRF450 --TO-204AA

    JANTX2N6770

    Abstract: irf4501 mosfet IRF450 IRF450 JANTXV2N6770
    Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International


    Original     		PDF 90330F IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) stabil52-7105 JANTX2N6770 irf4501 mosfet IRF450 IRF450 JANTXV2N6770

    mosfet IRF450

    Abstract: IRF450 JANTX2N6770 JANTXV2N6770
    Text: PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF450 500V ID 0.400Ω 12A The HEXFET ®technology is the key to International


    Original     		PDF PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) mosfet IRF450 IRF450 JANTX2N6770 JANTXV2N6770

    IRF450

    Abstract: TA17435 mosfet IRF450 TB334
    Text: IRF450 Data Sheet March 1999 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 13A, 500V Formerly developmental type TA17435. Ordering Information IRF450 PACKAGE TO-204AA 1827.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF450 TA17435. O-204AA IRF450 TA17435 mosfet IRF450 TB334

    IRF452

    Abstract: IRF453 IRF451 irf450
    Text: IRF450, IRF451, IRF452, IRF453 S E M I C O N D U C T O R 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF450, IRF451, IRF452, IRF453 TA17435. IRF452 IRF453 IRF451 irf450

    Untitled

    Abstract: No abstract text available
    Text: IRF450 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D)7.75 @Temp (øC)100 IDM Max (@25øC Amb)48 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		PDF IRF450

    IRF450 application

    Abstract: Matching MOSFET Drivers to MOSFETs IRF450A mosfet IRF450 TC4420 die TC4420-29 TC4431 application matching mosfet TC170 TC426
    Text: AN30 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. MOSFET DIE SIZES TC4424 Input Unlike bipolar transistors in which die size is primarily a function of


    Original     		PDF TC4424 DS00799A IRF450 application Matching MOSFET Drivers to MOSFETs IRF450A mosfet IRF450 TC4420 die TC4420-29 TC4431 application matching mosfet TC170 TC426

    AN799 Matching MOSFET Drivers to MOSFETs

    Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
    Text: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of


    Original     		PDF AN799 TC4424 D-81739 DS00799A* DS00799A-page AN799 Matching MOSFET Drivers to MOSFETs an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424

    IRF450 transistor

    Abstract: irf450 mosfet 452 IRF452 mosfet IRF450
    Text: MOTOROLA SEMICONDUCTOR IRF450 IRF451 IRF452 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V d SS rDS on >D IRF450 500 V 0.4 n 13 A IRF451 450 V 0.4 n 13 A IRF452 500 V 0.5 n 12 A T h e s e T M O S P o w e r FETs are d es igne d fo r high v o ltag e, high


    OCR Scan     		PDF IRF450 IRF451 IRF452 IRF452 IRF451. IRF450, IRF450 transistor mosfet 452 mosfet IRF450

    IRF450

    Abstract: mosfet IRF450 IRF451 IRF452 IRF453 IRF 450 MOSFET sim 300s
    Text: - Standard Power MOSFETs File Num ber IRF450, IRF451, IRF452, IRF453 1827 Power MOS Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan     		PDF IRF450, IRF451, IRF452, IRF453 IRF452 IRF453 IRF450 mosfet IRF450 IRF451 IRF 450 MOSFET sim 300s

    14n50e

    Abstract: IRF450 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF450 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, con­ verters, solenoid and relay drivers.


    OCR Scan     		PDF IRF450 O-204AA) IRF450 14n50e IRF450 transistor

    irf450

    Abstract: diode F451 IRF452 IRF451
    Text: iH A R R is SEUIC0NDUCT0R IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF450, IRF451, IRF452, IRF453 TB334 RF452, irf450 diode F451 IRF452 IRF451

    IRF452

    Abstract: IRF450 IRF451 irf453
    Text: h a f r r is IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF450, IRF451, IRF452, IRF453 TA17435. RF452, IRF452 IRF450 IRF451 irf453

    350w schematic diagram motor control

    Abstract: IRF450
    Text: 3QE 7 f Z D • T'ïE'iEB? GDSTTbl 2 ■ ' T ' - ' 3 CH 3 S G S -T H O M S O N IR F 4 5 0 - 4 5 1 ti^D g^(Q [iL[l ir^©lD©i_ IR F 4 5 2 - 4 5 3 S: G S-THOMSÔN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS ^DS(on) Id IRF450 500 V


    OCR Scan     		PDF IRF450 IRF451 IRF452 IRF453 100Vv SC-02Í 350w schematic diagram motor control

    IRF450

    Abstract: irf 44 ns irf p channel IRF452 irf 44 n irf 451
    Text: G .7 J M TM SGS-THOMSON LKêTÏÏMMÊS IRF 450 - 451 IRF 452 - 453 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF450 500 V 0.4 IRF451 450 V 0.4 IRF452 500 V 0.5 IRF453 450 V 0.5 R DS on fi fi fi fi 13 A 13 A 11 A 11 A • HIGH VOLTAGE - 450V FOR OFF LINE SMPS


    OCR Scan     		PDF IRF450 IRF451 IRF452 IRF453 CURRENT-11A UPT0350W irf 44 ns irf p channel irf 44 n irf 451

    irf 44 n

    Abstract: irf 44 ns IRF 450 irf 451 IRF452 smps 450 W irf transistors IRF P channel IRF451
    Text: Æ 7 IRF 450 - 451 IRF 452 - 453 S G S -T H O M S O N “ /# „ M M o IÜ IigïO M ïffl S § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^ D S (o n ) IRF450 500 V 0.4 O IRF451 450 V 0.4 0 13 A IRF452 500 V 0.5 11 A IRF453 450 V 0.5 fi fi


    OCR Scan     		PDF IRF450 IRF451 IRF452 IRF453 T0350W irf 44 n irf 44 ns IRF 450 irf 451 smps 450 W irf transistors IRF P channel

    IRF461

    Abstract: IRF452 IRF450 mosfet IRF450 IRF463 IRF 450 MOSFET irf460 MOSFET IRF460 100-C IRF451
    Text: 01 i>Ë| 3fl7SGöl G01Ô3S4 2 3 8 7 5 0 8 1_ G E_SOL ID STATE 01E 18324 D T~37~f3 Standard Power MOSFETs File Nu m b er 1827 IRF450, IRF451, IRF452, IRF453 Power M O S Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E N -Channel Enhancem ent-Mode


    OCR Scan     		PDF IRF450, IRF451, IRF452, IRF453 3374i IRF452 IRF453 IRF461 IRF450 mosfet IRF450 IRF463 IRF 450 MOSFET irf460 MOSFET IRF460 100-C IRF451

    IRF452

    Abstract: IRF450
    Text: h e o I MassMsa odgiitö □ | INTERNATIONAL Data Sheet No. PD-9.322I re c tifie r INTERNATIONAL RECTIFIER I«R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* IRF45Q IRF451 IRF452 IRF453 HEXFET TRANSISTORS N-CHANNEL 500 Volt, 0.40 Ohm HEXFET TO-204AA TO-3 Hermetic Package


    OCR Scan     		PDF T-39-13 IRF45Q IRF451 IRF452 IRF453 O-204AA IRF450 G-181 IRF450, IRF451, IRF452 IRF450

    irf440

    Abstract: No abstract text available
    Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t


    OCR Scan     		PDF IRF9140 IRF9230 IRF9240 irf440

    IRF450

    Abstract: IRF450 transistor
    Text: IRF450.451 P86FR2,R1 IFSMm-öffiS FUT 13 AMPERES 500, 450 VOLTS RDS(ON = 0.4 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF

    IRF series

    Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
    Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs


    OCR Scan     		PDF

    BUZ10A

    Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
    Text: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B


    OCR Scan     		PDF D04b3 BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 T0220 BUZ10A BUZ10A IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 00S3T73 T31 2 H A R R IS ■ HAS IR F 450/451/452/453 IRF450R /451R /452R /4S 3R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features • Package T O -2 0 4 A A 11A and 13A, 4SOV - 5 0 0V • r o s ( o i = 0 .4 ÎÎ an d 0 .5 f i


    OCR Scan     		PDF 00S3T73 IRF450R /451R /452R IRF450, IRF451, IRF452, IRF453 IRF450R, IRF451R,