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    IRF630 MOSFET DATA SHEET Search Results

    IRF630 MOSFET DATA SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRF630 MOSFET DATA SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf630

    Abstract: rf1s630sm9a IRF630 Fairchild
    Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power


    Original     		PDF IRF630, RF1S630SM IRF63 O220AB O263AB RF1S630SM irf630 rf1s630sm9a IRF630 Fairchild

    IRF632 datasheet

    Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF630, RF1S630SM TA17412. IRF632 datasheet IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild

    TA17412

    Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer curve tracer specification of curve tracer AN-957 12 VOLTS CIRCUIT USING MOSFET IRF630 AN957 short circuit tracer INT-944
    Text: Application Note AN-957 Measuring HEXFET MOSFET Characteristics Table of Contents Page 1. General Information. 1 2. BVDSS . 3


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer curve tracer specification of curve tracer AN-957 12 VOLTS CIRCUIT USING MOSFET IRF630 AN957 short circuit tracer INT-944

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176
    Text: AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176

    tektronix 576 curve tracer

    Abstract: No abstract text available
    Text: VISHAY SILICONIX Power MOSFETs Application Note AN-957 Measuring Power MOSFET Characteristics TABLE OF CONTENTS Page 1. General Information . 2


    Original     		PDF AN-957 18-Nov-10 tektronix 576 curve tracer

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer curve tracer AN957 specification of curve tracer 5V GATE TO SOURCE VOLTAGE MOSFET IRF630 short circuit tracer tektronix 475 INT-944
    Text: Index AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer curve tracer AN957 specification of curve tracer 5V GATE TO SOURCE VOLTAGE MOSFET IRF630 short circuit tracer tektronix 475 INT-944

    Untitled

    Abstract: No abstract text available
    Text: BACK HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13/14 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable


    Original     		PDF AN-H21 HV9110/11/12/13/14 HV9120/23 IRF630 750KHz. IRF630, 10-9F 000Hz

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    HV9113

    Abstract: HV9120
    Text: HV91 Series Application Note AN-H21 3 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13/14 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable


    Original     		PDF AN-H21 HV9110/11/12/13/14 HV9120/23 IRF630 750KHz. IRF630, 10-9F 000Hz HV9113 HV9120

    AN-H21

    Abstract: irf630 mosfet data sheet HV9120 IC MOSFET QG IRF630 irf630 equivalent HV9113
    Text: HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13/14 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable


    Original     		PDF AN-H21 HV9110/11/12/13/14 HV9120/23 IRF630 750KHz. IRF630, 10-9F 000Hz AN-H21 irf630 mosfet data sheet HV9120 IC MOSFET QG irf630 equivalent HV9113

    HV9113

    Abstract: HV9120 VN2460
    Text: HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable


    Original     		PDF AN-H21 HV9110/11/12/13 HV9120/23 IRF630, 10-9F 000Hz HV9113 HV9120 VN2460

    HV9120

    Abstract: No abstract text available
    Text: HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable


    Original     		PDF AN-H21 HV9110/11/12/13 HV9120/23 IRF630, 10-9F 000Hz HV9120

    HV9113

    Abstract: AN-H21 IC MOSFET QG VN2460 545u 0024W
    Text: AN-H21 Application Note Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I First, the operational VDD the IC will use should be known. This is generally a parameter decided upon by the designer for his convenience. Once VDD is known, it is used to find the


    Original     		PDF AN-H21 HV9110/11/12/13 HV9120/23 HV9113 AN-H21 IC MOSFET QG VN2460 545u 0024W

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: SMD2512 UDG-99127 UCC3921 1N4148 IRF630 IRF630S UCC3913 SLUS274 texas instruments transistor manual
    Text: Application Report SLUU076A - August 2000 UCC3913 or UCC3921 Hot Swap Power Manager Evaluation Board Power Management Products 1 Evaluation Board Operation This user’s guide highlights the UCC3913/ UCC3921 evaluation board in a typical –48-Vdc, 1-A application circuit.


    Original     		PDF SLUU076A UCC3913 UCC3921 UCC3913/ 48-Vdc, TRANSISTOR REPLACEMENT GUIDE SMD2512 UDG-99127 1N4148 IRF630 IRF630S SLUS274 texas instruments transistor manual

    3C80 philips

    Abstract: 3C80 ferrite 55310-A2 3C80 transformer PHILIPS toroidal core 3f3 MOC8100 3C80 3c80 material 55310-a2 core EI187-3C80
    Text: UNITRODE CORPORATION APPLICATION NOTE U-150 APPLYING THE UCC3570 VOLTAGE-MODE PWM CONTROLLER TO BOTH OFF-LINE AND DC/DC CONVERTER DESIGNS By Robert A. Mammano Vice President Advanced Technology Abstract BiCMOS processing provides the key to a new integrated PWM controller which offers higher switching frequencies at lower quiescent current drain while including new innovations in both performance and protection features.


    Original     		PDF U-150 UCC3570 48-to5V RN55D 3C80 philips 3C80 ferrite 55310-A2 3C80 transformer PHILIPS toroidal core 3f3 MOC8100 3C80 3c80 material 55310-a2 core EI187-3C80

    irf630

    Abstract: RD161
    Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA


    OCR Scan     		PDF IRF630 O-220 irf630 RD161

    f630

    Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
    Text: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec­


    OCR Scan     		PDF IRF63Q IRFG31 IRFB32 IRF633 TQ-220AB C-245 IRF630, IRF631, IRF632, IRF633 f630 IRF630 HEXFET TRANSISTORS F633 IRF632 alps 103 DIODE C244 mosfet f630

    Untitled

    Abstract: No abstract text available
    Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRF630, RF1S630SM 400i2

    irf 4110

    Abstract: for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 IRF630 IRF631 irf 1962 SS-AT9
    Text: MOTOROLA SC X S T R S /R F IME D II b3fej?554 0 0 0 ^ ^ 3 3 MOTOROLA I • SEMICONDUCTOR TECHNICAL DATA IRF630 IRF631 IRF632 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed fo r low


    OCR Scan     		PDF IRF630 IRF631 IRF632 IRF630, IRF632 irf 4110 for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 irf 1962 SS-AT9

    Untitled

    Abstract: No abstract text available
    Text: International jag Rectifier • uêSS^SS 0 0 1 4 7 1 b 3bT B I N R PD-9.3091 I P p e o n INTERNATIONAL R ECTIFIER bSE HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		PDF IRF630

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF630 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed fo r low voltage, high speed power sw itching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		PDF IRF630 21A-06 O-220AB) b3b7254

    IRF630 HARRIS

    Abstract: Transistor irf230 BUZ30 5A/IRF630 HARRIS
    Text: HARRIS SEMICOND SECTOR tflE D • M30E271 QOS1 1 1 4 S E M I C O N D U C T O R January 1993 N “C h 3 n n l M O S C h ip Die Features • HAS PCF230W HARRIS a ■ Passivated • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni


    OCR Scan     		PDF M30E271 PCF230W Mil-Std-750, IRF630 BUZ30 IRF230 2N6758 IRFF230 2N6798 PCF230W IRF630 HARRIS Transistor irf230 5A/IRF630 HARRIS

    55310-A2

    Abstract: 4N25 PHILIPS MTP3N80E clock u150 100 watt hf mosfet 12 volt U150D TOKO 3702
    Text: UNITRODE CORPORATION APPLICATION NOTE U-150 APPLYING THE UCC3570 VOLTAGE-MODE PWM CONTROLLER TO BOTH OFF-LINE AND DC/DC CONVERTER DESIGNS By Robert A. Mammano Vice President Advanced Technology Abstract BiCMOS processing provides the key to a new integrated PWM controller which offers higher switching frequen­


    OCR Scan     		PDF U-150 UCC3570 48-toSV 187-3C80 26AWG 31AWG 25AWG T68-52D 20AWG 262LYF-0077M 55310-A2 4N25 PHILIPS MTP3N80E clock u150 100 watt hf mosfet 12 volt U150D TOKO 3702