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    IRF63 Price and Stock

    STMicroelectronics IRF630

    MOSFET N-CH 200V 9A TO220AB
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    DigiKey IRF630 Tube 12,829 1
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    Avnet Americas IRF630 Bulk 53 Weeks, 3 Days 1
    • 1 $1.35
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    IRF630 Tube 26 Weeks 2,000
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    Mouser Electronics IRF630 1,571
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    Verical IRF630 6,494 17
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    Arrow Electronics IRF630 6,504 26 Weeks 1
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    Newark IRF630 Bulk 1 1
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    STMicroelectronics IRF630 1,522 1
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    Quest Components IRF630 84
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    IRF630 80
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    IRF630 16
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    TME IRF630 366 1
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    Avnet Silica IRF630 3,050 17 Weeks 50
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    Component Electronics, Inc IRF630 235
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    EBV Elektronik IRF630 1,200 27 Weeks 50
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    Vishay Siliconix IRF634PBF

    MOSFET N-CH 250V 8.1A TO220AB
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    DigiKey IRF634PBF Tube 6,306 1
    • 1 $1.98
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    Infineon Technologies AG IRF630NPBF

    MOSFET N-CH 200V 9.3A TO220AB
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    DigiKey IRF630NPBF Tube 6,075 1
    • 1 $1.66
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    Avnet Americas IRF630NPBF Tube 3,890 8 Weeks 1
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    IRF630NPBF Bulk 16 Weeks, 4 Days 1
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    Mouser Electronics IRF630NPBF 6,009
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    Verical IRF630NPBF 142,896 24
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    IRF630NPBF 13,874 129
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    IRF630NPBF 2,263 24
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    IRF630NPBF 2,017 17
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    Arrow Electronics IRF630NPBF 142,904 8 Weeks 1
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    IRF630NPBF 8,029 8 Weeks 1,000
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    IRF630NPBF 2,263 1
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    IRF630NPBF 2,017 8 Weeks 1
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    Newark IRF630NPBF Bulk 227 1
    • 1 $0.404
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    Rochester Electronics IRF630NPBF 1
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    TME IRF630NPBF 383 1
    • 1 $0.872
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    Ameya Holding Limited IRF630NPBF 1,000
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    Chip 1 Exchange IRF630NPBF 1,508
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    Chip1Stop IRF630NPBF Tube 13,874
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    EBV Elektronik IRF630NPBF 95,000 9 Weeks 1,000
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    New Advantage Corporation IRF630NPBF 76,000 1
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    Win Source Electronics IRF630NPBF 238,874
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    Wuhan P&S IRF630NPBF 1,000 1
    • 1 $0.53
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    Vishay Siliconix IRF630PBF

    MOSFET N-CH 200V 9A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF630PBF Tube 5,194 1
    • 1 $1.66
    • 10 $1.66
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    • 1000 $0.55075
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    RS IRF630PBF Bulk 1,000
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    Vishay Siliconix IRF630SPBF

    MOSFET N-CH 200V 9A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF630SPBF Tube 939 1
    • 1 $2.42
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    ComSIT USA IRF630SPBF 250
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    Find more IRF63 price and stock on Findchips.com

    IRF63 Datasheets (260)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF630 Fairchild Semiconductor 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs Original PDF
    IRF630 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF630 Intersil 9A, 200V, 0.400 ?, N-Channel Power MOSFETs Original PDF
    IRF630 Philips Semiconductors N-Channel TrenchMOS Transistor Original PDF
    IRF630 STMicroelectronics N-CHANNEL 200V - 0.35 ? - 9A - TO-220-TO220-FP Original PDF
    IRF630 STMicroelectronics N-Channel 200V - 0.35W - 9A - TO-220-FP MESH OVERLAY MOSFET Original PDF
    IRF630 STMicroelectronics N-channel 200V - 0.35 Ohm - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET Original PDF
    IRF630 STMicroelectronics N-channel 200V - 0.35 Ohm - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET Original PDF
    IRF630 Temic Semiconductors 8-bit CMOS Microcontroller 0-60 MHz Original PDF
    IRF630 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF630 Transys Electronics Power MOSFET Original PDF
    IRF630 Fairchild Semiconductor N-Channel Power MOSFETs, 12A, 150-200 V Scan PDF
    IRF630 FCI POWER MOSFETs Scan PDF
    IRF630 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF630 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF630 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. Scan PDF
    IRF630 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF630 International Rectifier Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) Scan PDF
    IRF630 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF630 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, 200V, 9A, Pkg Style TO220AB Scan PDF
    ...

    IRF63 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF634

    Abstract: IRF634FP
    Text: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3


    Original     		PDF IRF634 IRF634FP O-220/TO-220FP O-220 O-220FP IRF634 IRF634FP

    IRF630M

    Abstract: IRF630MFP
    Text: IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630M 200 V < 0.40 Ω 9A IRF630FPM 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF630M IRF630MFP O-220/TO-220FP IRF630FPM O-220 O-220 O-220FP IRF630M IRF630MFP

    Untitled

    Abstract: No abstract text available
    Text: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω


    Original     		PDF IRF634N IRF634NS IRF634NL O-220 08-Mar-07

    ISL 2651

    Abstract: 630n
    Text: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRF630N/IRF630NS/IRF630NL O-263 O-262 O-220 100oC, ISL 2651 630n

    TA17412

    Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL

    IRF1010

    Abstract: IRF634N IRF634NL IRF634NS 1403X
    Text: PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF634NPbF IRF634NSPbF IRF634NLPbF l l HEXFET Power MOSFET


    Original     		PDF IRF634NPbF IRF634NSPbF IRF634NLPbF O-220 12-Mar-07 IRF1010 IRF634N IRF634NL IRF634NS 1403X

    IRF630PBF

    Abstract: No abstract text available
    Text: PD- 95916 IRF630PbF • Lead-Free Document Number: 91031 9/27/04 www.vishay.com 1 IRF630PbF Document Number: 91031 www.vishay.com 2 IRF630PbF Document Number: 91031 www.vishay.com 3 IRF630PbF Document Number: 91031 www.vishay.com 4 IRF630PbF Document Number: 91031


    Original     		PDF IRF630PbF 12-Mar-07 IRF630PBF

    irf630

    Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A


    Original     		PDF IRF630, IRF630S IRF630 O220AB) IRF630S OT404 irf630 smd transistor transistor IRF630 irf630 philips

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF630 MOSFET N-Channel TO-220 1. GATE FEATURES 2. DRAIN 3. SOURCE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units ID @TC=25℃ Continuous Drain Current, VGS @ 10 V


    Original     		PDF O-220 IRF630 O-220

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN


    Original     		PDF O-220 IRF630 O-220

    IRF634N

    Abstract: IRF634NL IRF634NS SiHF634N SiHF634N-E3 SiHF634NS SiHF634NS-E3
    Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single • • • • • • • • Advanced Process Technology


    Original     		PDF IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL SiHF634NS O-262) O-220 O-263) 18-Jul-08 IRF634N IRF634NL IRF634NS SiHF634N-E3 SiHF634NS-E3

    Untitled

    Abstract: No abstract text available
    Text: ^s.nii-donaucto'L L/^ioaueti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630B 0( 2) DESCRIPTION • Drain Current -ID= 9A@ TC=25°C • Drain Source Voltage: VDss= 200V(Min)


    Original     		PDF IRF630B

    Untitled

    Abstract: No abstract text available
    Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF630S, SiHF630S 2002/95/EC O-263) 11-Mar-11

    IRF630SPBF

    Abstract: 95118
    Text: PD - 95118 IRF630SPbF • Lead-Free www.irf.com 1 3/17/04 IRF630SPbF 2 www.irf.com IRF630SPbF www.irf.com 3 IRF630SPbF 4 www.irf.com IRF630SPbF www.irf.com 5 IRF630SPbF 6 www.irf.com IRF630SPbF D2Pak Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRF630SPbF EIA-418. IRF630SPBF 95118

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF630

    Abstract: TD 1409
    Text: IRF630 Power MOSFET VDSS = 200V, RDS on = 0.40 ohm, ID = 9.0 A D Drain G S Gate Drain Source N Channel ELECTRICAL CHARACTERISICS at Parameter Symbol Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Value Test Conditions Symbol


    Original     		PDF IRF630 -20VDC 160VDC, 20VDC 10VDC, O-220-AB IRF630 TD 1409

    IRF630S

    Abstract: No abstract text available
    Text: IRF630S Power MOSFET VDSS = 200V, RDS on = 0.40 ohm, ID = 9.0 A D G S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Leakage Current Gate Charge QGS Gate to Drain Charge QGD Input Capacitance CISS


    Original     		PDF IRF630S 160VDC, 10VDC 25VDC, 100VDC, IRF630S

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan     		PDF DD3711b T-39-01 CMD8

    irf630

    Abstract: RD161
    Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA


    OCR Scan     		PDF IRF630 O-220 irf630 RD161

    SEC irf630

    Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
    Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF TT70S7Û IRF630 IRF631 IRF632 IRF633 IRF633 O-220 SEC irf630 IRF630 SEC for IRF630

    IRF630R

    Abstract: IRF633R rf630 IRF631R IRF632R
    Text: Rugged Pow er M O S F E T s - IRF630R, IRF631R, IRF632R, IRF633R F ile N u m b e r 1990 Avalanche Energy Rated N-Channel Power MOSFETs 8.0A and 9.0A, 150V-200V rDs on = 0.40 and 0.60 N -C H A N N EL E N H A N C EM EN T M O D E D Features:


    OCR Scan     		PDF IRF630R, IRF631R, IRF632R, IRF633R 50V-200V 92CS-4ZCS8 IRF632R IRF633R IRF630R rf630 IRF631R

    Untitled

    Abstract: No abstract text available
    Text: IRF630S N - CHANNEL 200V - 0.35Î2 - 9A - D2PAK MESH OVERLAY MOSFET TYPE V IR F 630 S • . . . . . dss 200 V R d S o i i < 0 .4 0 Q. Id 9 A TYPICAL R D S (on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		PDF IRF630S O-263

    Untitled

    Abstract: No abstract text available
    Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRF630, RF1S630SM 400i2

    IRF634S

    Abstract: No abstract text available
    Text: IRF634S A d v a n c e d Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology 250 V 0.45Î1 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 8.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF634S IRF634S