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    IRF634S Search Results

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    IRF634S Price and Stock

    Vishay Siliconix IRF634S

    MOSFET N-CH 250V 8.1A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF634S Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $2.075
    • 10000 $2.075
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    Vishay Siliconix IRF634SPBF

    MOSFET N-CH 250V 8.1A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF634SPBF Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.88946
    • 10000 $0.88946
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    Vishay Siliconix IRF634STRLPBF

    MOSFET N-CHANNEL 250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF634STRLPBF Reel 800
    • 1 -
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    • 100 -
    • 1000 $0.59064
    • 10000 $0.4725
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    Vishay Siliconix IRF634STRRPBF

    MOSFET N-CH 250V 8.1A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF634STRRPBF Cut Tape 1
    • 1 $2.9
    • 10 $1.879
    • 100 $2.9
    • 1000 $2.9
    • 10000 $2.9
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    IRF634STRRPBF Digi-Reel 1
    • 1 $2.9
    • 10 $1.879
    • 100 $2.9
    • 1000 $2.9
    • 10000 $2.9
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    IRF634STRRPBF Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.99069
    • 10000 $0.875
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    Vishay Intertechnologies IRF634STRLPBF

    MOSFET N-CHANNEL 250V - Tape and Reel (Alt: IRF634STRLPBF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRF634STRLPBF Reel 12 Weeks 800
    • 1 -
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    • 1000 $0.4725
    • 10000 $0.44453
    Buy Now
    TTI IRF634STRLPBF Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.532
    • 10000 $0.482
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    EBV Elektronik IRF634STRLPBF 13 Weeks 800
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    IRF634S Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF634S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF634S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A D2PAK Original PDF
    IRF634S Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF634S International Rectifier HEXFET Power Mosfet Scan PDF
    IRF634S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF634SPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A D2PAK Original PDF
    IRF634STRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A D2PAK Original PDF
    IRF634STRL International Rectifier 250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan PDF
    IRF634STRL International Rectifier HEXFET Power MOSFET Scan PDF
    IRF634STRL Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF634STRLPBF Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 250V Original PDF
    IRF634STRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A D2PAK Original PDF
    IRF634STRR International Rectifier 250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan PDF
    IRF634STRR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF634STRRPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A D2PAK Original PDF

    IRF634S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original
    IRF634S, SiHF634S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original
    IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    IRF634S, SiHF634S 2002/95/EC O-263) 18-Jul-08 PDF

    AN609

    Abstract: IRF634S SiHF634S
    Text: IRF634S_RC, SiHF634S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRF634S SiHF634S AN609, 6863m 8651m 0259m 9396m 3890m 1419m 6299m AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11 PDF

    4538

    Abstract: AN609 IRF634S SiHF634S
    Text: IRF634S_RC, SiHF634S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    IRF634S SiHF634S AN609, 12-Mar-10 4538 AN609 PDF

    SiHF634S

    Abstract: smd e3a IRF634S SiHF634S-E3 SMD-220 SMD DIODE marking AB
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


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    IRF634S, SiHF634S SMD-220 SMD-220 18-Jul-08 smd e3a IRF634S SiHF634S-E3 SMD DIODE marking AB PDF

    smd diode marking 51

    Abstract: diode smd marking 51 SiHF634S
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original
    IRF634S, SiHF634S SMD-220 12-Mar-07 smd diode marking 51 diode smd marking 51 PDF

    IRF634S

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF634S FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.45Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


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    IRF634S IRF634S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95541 IRF634SPbF • Lead-Free SMD-220 Document Number: 91035 7/21/04 www.vishay.com 1 IRF634SPbF Document Number: 91035 www.vishay.com 2 IRF634SPbF Document Number: 91035 www.vishay.com 3 IRF634SPbF Document Number: 91035 www.vishay.com 4 IRF634SPbF


    Original
    IRF634SPbF SMD-220 08-Mar-07 PDF

    1047 diode

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original
    IRF634S, SiHF634S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 1047 diode PDF

    SMD-220

    Abstract: IRF634SPBF
    Text: PD - 95541 IRF634SPbF • Lead-Free SMD-220 Document Number: 91035 7/21/04 www.vishay.com 1 IRF634SPbF Document Number: 91035 www.vishay.com 2 IRF634SPbF Document Number: 91035 www.vishay.com 3 IRF634SPbF Document Number: 91035 www.vishay.com 4 IRF634SPbF


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    IRF634SPbF SMD-220 12-Mar-07 SMD-220 IRF634SPBF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original
    IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11 PDF

    k 1542

    Abstract: IRF634SPBF
    Text: PD - 95541 IRF634SPbF • Lead-Free SMD-220 www.irf.com 1 7/21/04 IRF634SPbF 2 www.irf.com IRF634SPbF www.irf.com 3 IRF634SPbF 4 www.irf.com IRF634SPbF www.irf.com 5 IRF634SPbF 6 www.irf.com IRF634SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations


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    IRF634SPbF SMD-220 EIA-418. k 1542 IRF634SPBF PDF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


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    OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 PDF

    CS51220

    Abstract: MMSD4148T1 MMSZ5239BT1 IRF634S MBRB2535CTL MMFT1N10E MMSZ5245BT1 MOC213 NCP4414 MTB20N20E
    Text: CS51220DEMO/D Demonstration Note for CS51220 36 V–72 V Dual DC–DC Converter 5 V/5 A and 3.3 V/5 A Output, Featuring the CS51220 Feed–Forward Voltage Mode PWM Controller with Programmable Phase Delay Synchronization http://onsemi.com DEMONSTRATION NOTE


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    CS51220DEMO/D CS51220 CS51220 r14525 MMSD4148T1 MMSZ5239BT1 IRF634S MBRB2535CTL MMFT1N10E MMSZ5245BT1 MOC213 NCP4414 MTB20N20E PDF

    LL110

    Abstract: IRF7207 irf7105 IRF7342 IRFR024N IRF7317 IRL32 iRF 0420 irFR5305 IRFR9024
    Text: International Rectifier Existing Product The HEXFET SMD Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months Potential products no current plans. see bus.mgmt. Dual SO-8 SOT-223 DPak Effective 14 June, 1999


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    IRF7233 IRF7220 OT-223 IRLML2402 IRF7501/7 IRLMS1902 IRF7210 -400V IRF840S* IRF830S* LL110 IRF7207 irf7105 IRF7342 IRFR024N IRF7317 IRL32 iRF 0420 irFR5305 IRFR9024 PDF

    MARKING SMD transistor R44

    Abstract: No abstract text available
    Text: Back CS51220 Feed Forward Voltage Mode PWM Controller with Programmable Synchronization http://onsemi.com CS51220 is a single output PWM Controller with switching frequency up to 500 kHz. The feed forward voltage mode control provides excellent line regulation for wide input range. This PWM


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    CS51220 r14525 CS51220/D MARKING SMD transistor R44 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original
    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    IRF634S

    Abstract: No abstract text available
    Text: IRF634S A d v a n c e d Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology 250 V 0.45Î1 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 8.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan
    IRF634S IRF634S PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF634S A d van ced Power MOSFET FEATURES - 250 V ♦ Rugged Gate Oxide Technology ^ D S o n = 0.45Q ♦ Lower Input Capacitance lD = 8.1 A B ^D S S ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V


    OCR Scan
    IRF634S PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF634S A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 0 .4 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 8 .1 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


    OCR Scan
    IRF634S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1005 International ioR R ectifier IRF634S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description


    OCR Scan
    IRF634S SMD-220 SMD-220 D-6380 PDF

    045-CI

    Abstract: DIODE rj 81a 7z mosfet AN-994 IRF634S SMD-220 SMD 81A diode 81a smd
    Text: PD-9.1005 International [rag Rectifier IRF634S HEXFET P ow er M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 2 5 0 V


    OCR Scan
    IRF634S SMD-220 caIRF634S 045-CI DIODE rj 81a 7z mosfet AN-994 IRF634S SMD 81A diode 81a smd PDF