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    IRF630 P Search Results

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    IRF630 P Price and Stock

    Vishay Siliconix IRF630PBF

    MOSFET N-CH 200V 9A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF630PBF Tube 5,179 1
    • 1 $1.82
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    • 100 $1.82
    • 1000 $0.625
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    RS IRF630PBF Bulk 1,000
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    • 1000 $1.19
    • 10000 $1.13
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    Quest Components IRF630PBF 28
    • 1 $1.5
    • 10 $1.25
    • 100 $0.9
    • 1000 $0.9
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    New Advantage Corporation IRF630PBF 6,900 1
    • 1 -
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    • 100 $0.5215
    • 1000 $0.5215
    • 10000 $0.5215
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    Vishay Siliconix IRF630PBF-BE3

    MOSFET N-CH 200V 9A TO220AB
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    DigiKey IRF630PBF-BE3 Tube 1
    • 1 $1.49
    • 10 $1.49
    • 100 $1.49
    • 1000 $1.49
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    Vishay Intertechnologies IRF630PBF

    MOSFET N-CHANNEL 200V - Bulk (Alt: IRF630PBF)
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    Avnet Americas IRF630PBF Bulk 1,000 15 Weeks 1
    • 1 $0.2944
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    IRF630PBF Bulk 18 Weeks, 1 Days 1
    • 1 $0.66
    • 10 $0.833
    • 100 $0.709
    • 1000 $0.709
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    Mouser Electronics IRF630PBF 4,020
    • 1 $1.24
    • 10 $1.01
    • 100 $0.65
    • 1000 $0.625
    • 10000 $0.625
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    Verical IRF630PBF 841 95
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    • 100 $0.8671
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    IRF630PBF 627 19
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    IRF630PBF 471 13
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    • 100 $0.5369
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    IRF630PBF 105 58
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    • 100 $0.596
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    Arrow Electronics IRF630PBF 635 10 Weeks 1
    • 1 $0.7795
    • 10 $0.552
    • 100 $0.5137
    • 1000 $0.5032
    • 10000 $0.4318
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    IRF630PBF 471 15 Weeks 1
    • 1 $0.7653
    • 10 $0.5716
    • 100 $0.5369
    • 1000 $0.5272
    • 10000 $0.5226
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    Newark IRF630PBF Bulk 841 1
    • 1 $0.531
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    Bristol Electronics IRF630PBF 30
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    Quest Components IRF630PBF 24
    • 1 $1.155
    • 10 $0.924
    • 100 $0.693
    • 1000 $0.693
    • 10000 $0.693
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    TTI IRF630PBF Tube 6,050 50
    • 1 -
    • 10 -
    • 100 $0.569
    • 1000 $0.531
    • 10000 $0.52
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    TME IRF630PBF 418 1
    • 1 $1.169
    • 10 $0.903
    • 100 $0.709
    • 1000 $0.577
    • 10000 $0.486
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    EBV Elektronik IRF630PBF 4,750 11 Weeks 50
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    Vyrian IRF630PBF 2,025
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    Vishay Intertechnologies IRF630PBF-BE3

    N-CHANNEL 200V - Tape and Reel (Alt: IRF630PBF-BE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRF630PBF-BE3 Reel 15 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.44125
    • 10000 $0.41513
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    Mouser Electronics IRF630PBF-BE3 1,977
    • 1 $1.46
    • 10 $0.65
    • 100 $0.65
    • 1000 $0.649
    • 10000 $0.625
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    Newark IRF630PBF-BE3 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.765
    • 10000 $0.685
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    TTI IRF630PBF-BE3 Tube 3,200 50
    • 1 -
    • 10 -
    • 100 $0.667
    • 1000 $0.635
    • 10000 $0.622
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    Vyrian IRF630PBF-BE3 2,532
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    Infineon Technologies AG IRF630NPBF

    MOSFETs MOSFT 200V 9.5A 300mOhm 23.3nC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRF630NPBF 7,122
    • 1 $1.33
    • 10 $1.1
    • 100 $0.645
    • 1000 $0.43
    • 10000 $0.43
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    IRF630 P Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF630PBF International Rectifier HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40 Ohm , ID = 9.0A ) Original PDF
    IRF630PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A TO-220AB Original PDF
    IRF630PBF-BE3 Vishay Siliconix MOSFET N-CH 200V 9A TO220AB Original PDF

    IRF630 P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF630

    Abstract: mosfet morocco IRF630FP IRF630 p
    Text: IRF630 IRF630FP  N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF630 IRF630F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.40 Ω < 0.40 Ω 9 A 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


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    IRF630 IRF630FP O-220/FP IRF630F O-220 O-220FP IRF630 mosfet morocco IRF630FP IRF630 p PDF

    IRF630

    Abstract: IRF630FP
    Text: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


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    IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP IRF630 IRF630FP PDF

    irf630

    Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A


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    IRF630, IRF630S IRF630 O220AB) IRF630S OT404 irf630 smd transistor transistor IRF630 irf630 philips PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN


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    O-220 IRF630 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


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    IRF630, RF1S630SM 400i2 PDF

    irf630

    Abstract: IPF630 IRF632 1RF631 IRF631 IRF633 MOSFET 20V 100A IFIF631 IFIF633 motor characteristics curve
    Text: Standard Power M O SFETs IRF630, IRF631, IRF632, IRF633 File Number 1578 Power M O S Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 8.0A and 9.0A, 150V-200V rDs on = 0.4 Cl and 0.6 fi Features:


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    IRF630, IRF631, IRF632, IRF633 50V-200V IRF632 IRF633 irf630 IPF630 1RF631 IRF631 MOSFET 20V 100A IFIF631 IFIF633 motor characteristics curve PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN


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    O-220 IRF630 O-220 PDF

    IRF630

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


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    IRF630, SiHF630 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF630 PDF

    IRF630pbf

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


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    IRF630, SiHF630 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF630pbf PDF

    irf630

    Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
    Text: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ MTP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631


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    IRF230-233/IRF630-633 MTP12N18/12N20 TQ-204AA O-220AB IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 irf630 IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18 PDF

    irf630

    Abstract: RD161
    Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA


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    IRF630 O-220 irf630 RD161 PDF

    TA17412

    Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
    Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


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    IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF630 MOSFET N-Channel TO-220 1. GATE FEATURES 2. DRAIN 3. SOURCE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units ID @TC=25℃ Continuous Drain Current, VGS @ 10 V


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    O-220 IRF630 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: <zz>£tni-C.onauctoi J loaucti, L/nc, LJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630 0(2) DESCRIPTION • Drain Current -ID=9A@ TC=25°C • Drain Source Voltage-


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    IRF630 PDF

    SEC irf630

    Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
    Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


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    TT70S7Û IRF630 IRF631 IRF632 IRF633 IRF633 O-220 SEC irf630 IRF630 SEC for IRF630 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    SEC irf630

    Abstract: D84 TRANSISTOR irf630 D84DN2 Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor
    Text: IRF630,631 D84DN2.M2 lP MIfiiD !i£§ FIT FIELD EFFECT POWER TRANSISTOR 9.0 AMPERES S!00,150 VOLTS RDS(ON = 0-4 A This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


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    IRF630 D84DN2 12-5n 00A//usec, SEC irf630 D84 TRANSISTOR Irf631 Switching N-Channel Power MOS FET 50a transistor irf630 IRF630 Transistor PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    LS7636 LS7637

    Abstract: No abstract text available
    Text: LSI/CSI UL LS7636 LS7637 LS7636FO LS7637FO LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 A3800 REVERSE PHASE (TRAILING-EDGE) HALOGEN LAMP DIMMER PIN ASSIGNMENT - TOP VIEW V DD (+V ) 1 2 TEST 3 SYNC


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    LS7636 LS7637 LS7636FO LS7637FO A3800 LS7636 1N4148 MPS8599 MPS8099 LS7636 LS7637 PDF

    Equivalent IRF 44

    Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
    Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170


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    O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 Equivalent IRF 44 irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 PDF

    IRF640 equivalent

    Abstract: irf630 irf640 IRF540 VN67AF VN0108N2 irf640 BUZ 72 A equivalent IRF232 IRF422 IRF632
    Text: Siliconix 1-1? f l Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0


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    O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 IRF640 equivalent irf630 irf640 VN67AF VN0108N2 BUZ 72 A equivalent IRF232 IRF422 PDF

    irf 80 n

    Abstract: irf 30A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
    Text: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220 S ilic o n ix


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    O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 irf 80 n irf 30A IRF340 IRF350 IRF740 VNP002A PDF

    transistor 2N2222 smt

    Abstract: 200v 5A mosfet 4n29 optocoupler Bill Andreycak 1K 1/4W Resistor 2N2222 circuit 2N2222 NPN Transistor features UNITRODE product and applications handbook transistor 2N2222 smt npn Unitrode Semiconductor 1n4148
    Text: DN-67 Design Note UCC3913 Electronic Circuit Breaker for Negative Voltage Applications Evaluation Kit List of Materials for a -48V/1A Test Circuit by Bill Andreycak Many battery powered and Telecommunications power supplies use some form of protection to prevent high currents from flowing during a short


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    DN-67 UCC3913 -48V/1A UDG-95072 F/16VDC 5nF/16VDC 1N4148 IRF630 00V/5A transistor 2N2222 smt 200v 5A mosfet 4n29 optocoupler Bill Andreycak 1K 1/4W Resistor 2N2222 circuit 2N2222 NPN Transistor features UNITRODE product and applications handbook transistor 2N2222 smt npn Unitrode Semiconductor 1n4148 PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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