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    IRF640 FIELD-EFFECT POWER TRANSISTOR Search Results

    IRF640 FIELD-EFFECT POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF640 FIELD-EFFECT POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    linear applications of power MOSFET IRF640

    Abstract: power MOSFET IRF640 IRF640 applications note for irf640 irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640 RF1S640SM
    Text: IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRF640, RF1S640, RF1S640SM TA17422. linear applications of power MOSFET IRF640 power MOSFET IRF640 IRF640 applications note for irf640 irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640 RF1S640SM

    IRF640 applications note

    Abstract: irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
    Text: IRF640, RF1S640SM Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF640, RF1S640SM TA17422. IRF640 applications note irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL

    IRF640 applications note

    Abstract: irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 RF1S640SM TB334
    Text: IRF640, RF1S640SM Data Sheet Title F64 1S6 SM bt A, 0V, 80 m, 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRF640, RF1S640SM TA17422. TB334 IRF640 RF1S640SM IRF640 applications note irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 TB334

    IRF640 applications note

    Abstract: IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A IRF643 RF1S640SM TB334
    Text: IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate


    Original     		PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM IRF640 applications note IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A IRF643 RF1S640SM TB334

    IRF5905

    Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
    Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES


    Original     		PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB

    IRFIBC44LC

    Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
    Text: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219


    Original     		PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    IRFZ44G

    Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
    Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics


    Original     		PDF IRFIZ34N IRFIZ44N IRFIZ48N IRFI1010N IRFI520N IRFI530N IRFI1310N IRLI3705N IRLIZ24N IRLIZ44N IRFZ44G IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N

    car subwoofer amplifier schematic circuit diagram

    Abstract: CAR SUBWOOFER 200W AMP car 12 volts amplifier mosfet 200w rms 12v subwoofer car amp circuits 12v 50 watt subwoofer shan circuit diagram 12v 200W subwoofer CIRCUIT DIAGRAM subwoofer 1000 watts amplifier subwoofer Amplifier 200w schematic diagrams 12v subwoofer amp circuits IRF9640 LT1210
    Text: LINEAR TECHNOLOGY AUGUST 1996 IN THIS ISSUE . . . COVER ARTICLE Safe Hot Swapping Using the LTC 1421 . 1 Robert Reay and James Herr VOLUME VI NUMBER 3 Safe Hot Swapping Using the LTC1421 by Robert Reay and James Herr Issue Highlights . 2


    Original     		PDF LTC1421 LTC1433/LTC1434: LTC1343 LTC1344 DB-25 S-191 1-800-4-LINEAR car subwoofer amplifier schematic circuit diagram CAR SUBWOOFER 200W AMP car 12 volts amplifier mosfet 200w rms 12v subwoofer car amp circuits 12v 50 watt subwoofer shan circuit diagram 12v 200W subwoofer CIRCUIT DIAGRAM subwoofer 1000 watts amplifier subwoofer Amplifier 200w schematic diagrams 12v subwoofer amp circuits IRF9640 LT1210

    linear applications of power MOSFET IRF640

    Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643
    Text: - Standard Power MOSFETs IRF640, IRF641, IRF642, IRF643 File Number 1585 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF640, IRF641, IRF642, IRF643 92CS-3374I IRF643 1F640, linear applications of power MOSFET IRF640 irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640

    motorola irf640

    Abstract: 643 lt IRF 640 mosfet IRF640 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 IRF641 IRF642 IRF643 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM OS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF640 IRF641 IRF642 IRF643 IRF640, IRF642, motorola irf640 643 lt IRF 640 mosfet IRF640 mosfet

    TP20N20E

    Abstract: IRF640
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 Pow er Field Effect Transistor IM-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF640 21A-06 O-220AB) RATINGS22 L3li7254 D2732 TP20N20E IRF640

    Untitled

    Abstract: No abstract text available
    Text: IRF640, RF1S640SM Semiconductor Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    OCR Scan     		PDF IRF640, RF1S640SM 180i2

    transistor U402

    Abstract: U402 221A-06 irf640 304 fet transistor IRF640 applications note 221D MTP20N20E motorola irf640 DIODE MOTOROLA 824
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T h is T M O S P o w e r FE T is d e s ig n e d fo r lo w V v o lta g e , h ig h s p e e d p o w e r s w itc h in g a p p lic a tio n s such as s w itc h in g re g u la to rs , c o n v e rte rs , s o le n o id


    OCR Scan     		PDF IRF640 21A-06 TQ-220AB) O-220 transistor U402 U402 221A-06 irf640 304 fet transistor IRF640 applications note 221D MTP20N20E motorola irf640 DIODE MOTOROLA 824

    RF640

    Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 IRF640 circuit IRF642 RF1S640
    Text: IRF640, IRF641, IRF642, RF1S640, RF1S640SM H A R R IS S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 16A and 18A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF640, IRF641, IRF642, RF643, RF1S640, RF1S640SM TB334 IRF640 O-220AB IRF640 RF640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 IRF640 circuit IRF642 RF1S640

    1RF640

    Abstract: IRF640 ge d84en2 f640 TRANSISTOR IRF640 T0220A8
    Text: Ê »Ü 3 »[Ï8 § IRF640.641 D64EN2,M2 [F U F 18 AMPERES 200,150 VOLTS R d s O N = 0.18 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRF640 D64EN2 00A//usec, 1RF640 IRF640 ge d84en2 f640 TRANSISTOR T0220A8

    irf740 switching 3 phase motor driver

    Abstract: IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF540 complementary transistor IRF740 VDMOS reliability testing report transistor equivalent irf740 IRF640 mosfet snubber circuit for mosfet push pull
    Text: MQSFET RUGGEDNESS Application Note DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION This application note discusses why and how MOSFET devices fail in switch-mode applications. It deals with the issue of ruggedness in the design of the device, and with system design strategies that can


    OCR Scan     		PDF

    BUZ71A equivalent

    Abstract: IRL734 IRF540 MAX643XCSA how to stepup 1.5v to 5v, 12v TRANSISTOR+642
    Text: y i/ iy j x iy i/ i F ix e d O u tp u t 10W CM O S Step-U p S w itc h in g R eg u lato rs _ F eatu res The MAX641/MAX642/MAX643 step-up switching regu­ lators are designed for minimum component DC-DC converter circuits in the 5mW to 10W range.


    OCR Scan     		PDF MAX641/MAX642/MAX643 MAX641/642/643 BUZ71A equivalent IRL734 IRF540 MAX643XCSA how to stepup 1.5v to 5v, 12v TRANSISTOR+642

    IRL734

    Abstract: 1RF620 IRZ14 Diode c 642
    Text: y i/iy jx iy i/i F ix e d O utput 10W CMOS S tep-U p S w itch in g R egulators _ F eatures The MAX641/MAX642/MAX643 step-up switching regu­ lators are designed for minimum component DC-DC converter circuits in the 5mW to 10W range. ♦ Fixed +5V, +12V, +15V Output Voltages


    OCR Scan     		PDF MAX641/MAX642/MAX643 MAX641/642/643 MAX643XCPA MAX643XCSA MAX643XC/D MAX643XEPA MAX643XESA MAX643XEJA MAX643XMJA IRL734 1RF620 IRZ14 Diode c 642

    IRF540 n-channel MOSFET

    Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
    Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.


    OCR Scan     		PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R

    JRF620

    Abstract: irl734 mosfet irf640 dc to dc converter Caddell-Burns IRZ14 analog IRF513 dc-dc converter 12v to 5v 3a BUZ21 L equivalent BUZ71A equivalent MTP12N10L
    Text: y v i y j x i y n F ixe d O utput 10W CMOS S tep-U p S w itc h in g R egulators _ ♦ Fixed +5V, +12V, +15V Output Voltages Low-power applications require only an output filter ca­ pacitor and a small, low-cost inductor. An additional


    OCR Scan     		PDF MAX641 /MAX642/MAX643 MAX641/642/643 MAX643XCPA MAX643XCSA MAX643XC/D MAX643XEPA MAX643XESA MAX643XEJA MAX643XMJA JRF620 irl734 mosfet irf640 dc to dc converter Caddell-Burns IRZ14 analog IRF513 dc-dc converter 12v to 5v 3a BUZ21 L equivalent BUZ71A equivalent MTP12N10L

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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