IRF644 Search Results
IRF644 Price and Stock
Rochester Electronics LLC IRF64414A, 250V, 0.28 OHM, N-CHANNEL |
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IRF644 | Bulk | 24,445 | 160 |
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Vishay Siliconix IRF644PBFMOSFET N-CH 250V 14A TO220AB |
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IRF644PBF | Tube | 717 | 1 |
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IRF644PBF | 35,150 | 1 |
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Rochester Electronics LLC IRF644B-FP001IRF644B - DISCRETE MOSFET |
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IRF644B-FP001 | Bulk | 636 | 160 |
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Vishay Siliconix IRF644STRRPBFMOSFET N-CH 250V 14A D2PAK |
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IRF644STRRPBF | Cut Tape | 578 | 1 |
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IRF644STRRPBF | 322 |
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Vishay Siliconix IRF644PBF-BE3MOSFET N-CH 250V 14A TO220AB |
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IRF644PBF-BE3 | Tube | 457 | 1 |
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IRF644 Datasheets (63)
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ECAD Model |
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Description |
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| IRF644 |
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250V N-Channel MOSFET | Original | 918.9KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | International Rectifier | 250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | Original | 941.84KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 14A TO-220AB | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | 205.11KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | International Rectifier | HEXFET Power MOSFET | Scan | 177.04KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | International Rectifier | Rugged Series Power MOSFETs - N-Channel | Scan | 42.04KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | International Rectifier | TO-220 N-Channel HEXFET Power MOSFET | Scan | 44.28KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | International Rectifier | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) | Scan | 177.04KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, 14A, Pkg Style TO-220AB | Scan | 50.01KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 112.74KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | Unknown | FET Data Book | Scan | 100.01KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.34KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 37.34KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRF644 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 85.5KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644A |
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Advanced Power MOSFET | Original | 230.34KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644A |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644A |
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Advanced Power MOSFET | Scan | 155.51KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644B |
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250V N-Channel MOSFET | Original | 700.44KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644B |
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250V N-Channel MOSFET | Original | 918.89KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF644 Datasheets Context Search
Catalog Datasheet |
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PDF |
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Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration |
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IRF644, SiHF644 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039 |
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IRF644PbF O-220AB 12-Mar-07 | |
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Contextual Info: PD - 95116 IRF644SPbF • Lead-Free Document Number: 91040 3/16/04 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040 |
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IRF644SPbF 08-Mar-07 | |
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Contextual Info: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from |
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94107B IRF644N IRF644NS IRF644NL 08-Mar-07 | |
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Contextual Info: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to |
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IRF644B/IRFS644B O-220 FP001 O-220F IRFS644B FP001 | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRF644S FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 14 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V |
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IRF644S | |
IRF644PBF
Abstract: IRF644 SiHF644-E3 SiHF644 diode 330
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IRF644, SiHF644 O-220 O-220 18-Jul-08 IRF644PBF IRF644 SiHF644-E3 diode 330 | |
IRF644B
Abstract: IRFS644B IRF series mosfet irf 150
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IRF644B/IRFS644B O-220 IRF644B IRFS644B IRF series mosfet irf 150 | |
IRF644AContextual Info: IRF644A A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V |
OCR Scan |
IRF644A IRF644A | |
IRF644N
Abstract: IRF644NL IRF644NS SiHF644N SiHF644N-E3 SiHF644NS SiHF644NS-E3
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IRF644N, IRF644NS, IRF644NL, SiHF644N SiHF644NS SiHF644NL O-262) O-220 O-263) 18-Jul-08 IRF644N IRF644NL IRF644NS SiHF644N-E3 SiHF644NS-E3 | |
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Contextual Info: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.28 68 Qgs (nC) 11 Qgd (nC) 35 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D S G • Halogen-free According to IEC 61249-2-21 |
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IRF644S, SiHF644S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
irf644
Abstract: Irfp244
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OCR Scan |
IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 irf644 Irfp244 | |
644NS
Abstract: IRF644NLPBF
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O-220 O-220AB AN-994. IRF644N) IRF644NS/L) 644NS IRF644NLPBF | |
rf1s644sContextual Info: HARRIS S E M I C O N D U C T O R IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 13A and 14A, 250V and 275V • High Input Impedance These are N-Channel enhancement mode silicon gate |
OCR Scan |
IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM TA17423E RF644, IRF645 rf1s644s | |
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IRF644N
Abstract: IRF644NL IRF644NS diode gp 634
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94107B IRF644N IRF644NS IRF644NL O-220 12-Mar-07 IRF644N IRF644NL IRF644NS diode gp 634 | |
IRF644Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure |
OCR Scan |
G0172flfl IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 IRF644 IRFP244 IRF645 IRFP245 IRF644 | |
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Contextual Info: N-CHANNEL POWER MOSFETS IRF644 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability |
OCR Scan |
IRF644 Curren07 | |
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Contextual Info: PD-9.1006 In tern atio n al k ?r R e c tifie r IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description |
OCR Scan |
IRF644S SMD-220 SMD-220 D-6380 DD51453 | |
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Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration |
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IRF644, SiHF644 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration |
Original |
IRF644, SiHF644 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: IRF644A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max @ Vos = 250V |
OCR Scan |
IRF644A | |
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Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration |
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IRF644, SiHF644 O-220 O-220 12-Mar-07 | |
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Contextual Info: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching |
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IRF644S, SiHF644S 2002/95/EC O-263) 18-Jul-08 | |
IRF644N
Abstract: IRF644NL IRF644NS diode gp 634 diode gp 421
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94107B IRF644N IRF644NS IRF644NL O-220 O-220AB AN-994. IRF644N) IRF644NS/L) IRF644N IRF644NL IRF644NS diode gp 634 diode gp 421 | |