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    IRF9Z24 Search Results

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    IRF9Z24 Price and Stock

    Vishay Siliconix IRF9Z24PBF

    MOSFET P-CH 60V 11A TO220AB
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    DigiKey IRF9Z24PBF Tube 5,500 1
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    New Advantage Corporation IRF9Z24PBF 350 1
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    Infineon Technologies AG IRF9Z24NPBF

    MOSFET P-CH 55V 12A TO220AB
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    IRF9Z24NPBF 2,438 18 Weeks 1
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    Bristol Electronics IRF9Z24NPBF 67
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    TME IRF9Z24NPBF 1,033 1
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    Chip1Stop IRF9Z24NPBF Tube 2,530
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    EBV Elektronik IRF9Z24NPBF 1,000 19 Weeks 1,000
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    Vishay Siliconix IRF9Z24SPBF

    MOSFET P-CH 60V 11A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF9Z24SPBF Tube 3,340 1
    • 1 $2.19
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    ComSIT USA IRF9Z24SPBF 600
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    New Advantage Corporation IRF9Z24SPBF 1,950 1
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    Vishay Siliconix IRF9Z24PBF-BE3

    MOSFET P-CH 60V 11A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF9Z24PBF-BE3 Tube 891 1
    • 1 $2.67
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    Vishay Siliconix IRF9Z24

    MOSFET P-CH 60V 11A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF9Z24 Tube 1,000
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    IRF9Z24 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9Z24 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9Z24 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 11A TO-220AB Original PDF
    IRF9Z24 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF9Z24 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF9Z24 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRF9Z24 International Rectifier HEXFET Power Mosfet Scan PDF
    IRF9Z24 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9Z24 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9Z24 Samsung Electronics P-Channel Power MOSFETS Scan PDF
    IRF9Z24 Samsung Electronics P-CHANNEL POWER MOSFETs Scan PDF
    IRF9Z24L International Rectifier HEXFET Power Mosfet Original PDF
    IRF9Z24L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9Z24N International Rectifier HEXFET Power MOSFET Original PDF
    IRF9Z24N International Rectifier HEXFET Power MOSFET Original PDF
    IRF9Z24N International Rectifier -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF9Z24N with Standard Packaging Original PDF
    IRF9Z24N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9Z24NL International Rectifier -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package; A IRF9Z24NL with Standard Packaging Original PDF
    IRF9Z24NL International Rectifier HEXFET Power MOSFET Original PDF
    IRF9Z24NLPBF International Rectifier Original PDF
    IRF9Z24NLPBF International Rectifier -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF9Z24NL with Lead Free Packaging Original PDF

    IRF9Z24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9Z24L

    Abstract: IRF9Z24S SiHF9Z24S
    Text: IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z24S, SiHF9Z24S) • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)


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    PDF IRF9Z24S, SiHF9Z24S IRF9Z24L, SiHF9Z24L 2002/95/EC 11-Mar-11 IRF9Z24L IRF9Z24S

    Untitled

    Abstract: No abstract text available
    Text: PD- 95415 IRF9Z24PbF • Lead-Free Document Number: 91090 06/14/04 www.vishay.com 1 IRF9Z24PbF Document Number: 91090 www.vishay.com 2 IRF9Z24PbF Document Number: 91090 www.vishay.com 3 IRF9Z24PbF Document Number: 91090 www.vishay.com 4 IRF9Z24PbF Document Number: 91090


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    PDF IRF9Z24PbF O-220AB 15ability,

    IRF9Z24NLPBF

    Abstract: IRL3103L IRF9Z24NS
    Text: PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF


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    PDF IRF9Z24NSPbF IRF9Z24NLPBF IRF9Z24NS/LPbF EIA-418. IRF9Z24NLPBF IRL3103L IRF9Z24NS

    ir9z24

    Abstract: IRF9Z24L IRF9Z24S SiHF9Z24S SiHF9Z24S-E3
    Text: IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single S I2PAK (TO-262) Available


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    PDF IRF9Z24S, IRF9Z24L, SiHF9Z24S SiHF9Z24L O-262) O-263) 18-Jul-08 ir9z24 IRF9Z24L IRF9Z24S SiHF9Z24S-E3

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V l RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier


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    PDF 1484B IRF9Z24N O-220 appli245,

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration • Repetitive Avalanche Rated 0.28 Available RoHS* • P-Channel


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    PDF IRF9Z24, SiHF9Z24 O-220 O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF


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    PDF IRF9Z24NSPbF IRF9Z24NLPBF IRF9Z24NS/LPbF F530S

    F53 DIODE

    Abstract: IRF9Z24L IRF9Z24S
    Text: PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24S l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.28Ω


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    PDF IRF9Z24S/L IRF9Z24S) IRF9Z24L) 12-Mar-07 F53 DIODE IRF9Z24L IRF9Z24S

    irf9z24

    Abstract: No abstract text available
    Text: IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration • Repetitive Avalanche Rated 0.28 • P-Channel Available RoHS*


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    PDF IRF9Z24, SiHF9Z24 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf9z24

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration • Repetitive Avalanche Rated 0.28 • P-Channel Available RoHS*


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    PDF IRF9Z24, SiHF9Z24 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z24N TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Power MOSFET Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation


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    PDF IRF9Z24N O-220AB O-220 O-220

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z24NS/L l l l l l l l Advanced Process Technology Surface Mount IRF9Z24NS Low-profile through-hole (IRF9Z24NL) 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of


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    PDF IRF9Z24NS/L IRF9Z24NS) IRF9Z24NL) O-263 O-262

    ir9z24

    Abstract: IRF9Z24L IRF9Z24S SiHF9Z24S SiHF9Z24S-E3
    Text: IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single G G G S RoHS* COMPLIANT


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    PDF IRF9Z24S, IRF9Z24L, SiHF9Z24S SiHF9Z24L 18-Jul-08 ir9z24 IRF9Z24L IRF9Z24S SiHF9Z24S-E3

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration • Repetitive Avalanche Rated 0.28 • P-Channel Available RoHS*


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    PDF IRF9Z24, SiHF9Z24 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single S I2PAK (TO-262) Available


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    PDF IRF9Z24S, IRF9Z24L, SiHF9Z24S SiHF9Z24L IRF9Z24S/SiHF9Z24S) IRF9Z24L/SiHF9Z24L) O-262) O-263) 12-Mar-07

    ITE 85

    Abstract: IRF9Z24NLPBF IRL3103L marking code 601 D2Pak Package
    Text: PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF • Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF


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    PDF IRF9Z24NSPbF IRF9Z24NLPBF IRF9Z24NS/LPbF EIA-418. ITE 85 IRF9Z24NLPBF IRL3103L marking code 601 D2Pak Package

    IRF9Z24N

    Abstract: IRF9Z24NL IRF9Z24NS
    Text: PD - 91742 IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω


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    PDF IRF9Z24NS/L IRF9Z24NS) IRF9Z24NL) IRF9Z24N IRF9Z24NL IRF9Z24NS

    IRF9Z24N

    Abstract: P-Channel irf IRf 48 MOSFET
    Text: PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier


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    PDF 1484B IRF9Z24N O-220 IRF9Z24N P-Channel irf IRf 48 MOSFET

    IRF9Z24

    Abstract: SiHF9Z24 SiHF9Z24-E3
    Text: IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 60 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration • Repetitive Avalanche Rated 0.28 Available RoHS* • P-Channel


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    PDF IRF9Z24, SiHF9Z24 O-220 O-220 18-Jul-08 IRF9Z24 SiHF9Z24-E3

    Untitled

    Abstract: No abstract text available
    Text: P D - 91742 International Iö R Rectifier IRF9Z24NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z24NS • Low-profile through-hole (IRF9Z24NL) • 175°C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated


    OCR Scan
    PDF IRF9Z24NS) IRF9Z24NL)

    Untitled

    Abstract: No abstract text available
    Text: PD - 91742 International IGR Rectifier IRF9Z24NS/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface M ount IRF9Z24NS Low-profile through-hole (IRF9Z24NL) 1 7 5 °C O perating Tem perature P-Channel Fast Switching Fully Avalanche Rated


    OCR Scan
    PDF IRF9Z24NS/L IRF9Z24NS) IRF9Z24NL)

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1484A International IO R Rectifier IRF9Z24N PRELIMINARY HEXFET^ Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V ^ D S o n =


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    PDF IRF9Z24N

    f9z24

    Abstract: No abstract text available
    Text: PD-9.1484A International I O R Rectifier IRF9Z24N HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -55 V R iDS on = 0.1750 lD = -12A


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    PDF IRF9Z24N O-220 C-278 C-279 f9z24

    IRF9Z24

    Abstract: IRF9Z20 P-Channel Power MOSFETS 97A IR
    Text: P-CHANNEL POWER MOSFETS IRF9Z24/20 FEATURES TO-220 • L o w e r R ds on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRF9Z24/20 IRF9Z24 IRF9Z20 P-Channel Power MOSFETS 97A IR