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Vishay Siliconix IRFBE30PBF-BE3 MOSFET N-CH 800V 4.1A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBE30PBF-BE3	Tube	2,656		1	1 $2.38 10 $2.38 100 $2.38 1000 $0.90712 10000 $0.90712	Buy Now
Vishay Siliconix IRFBE30PBF MOSFET N-CH 800V 4.1A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBE30PBF	Tube	2,050		1	1 $2.98 10 $2.98 100 $2.98 1000 $0.99658 10000 $0.90712	Buy Now
RS	IRFBE30PBF	Bulk			1,000	1 - 10 - 100 - 1000 $2.61 10000 $2.48	Get Quote
New Advantage Corporation	IRFBE30PBF		3,450		1	1 - 10 - 100 $0.8386 1000 $0.8386 10000 $0.8386	Buy Now
Vishay Siliconix IRFBE30LPBF MOSFET N-CH 800V 4.1A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBE30LPBF	Tube	988		1	1 $3.55 10 $3.55 100 $3.55 1000 $1.22126 10000 $1.15	Buy Now
Vishay Siliconix IRFBE30STRLPBF MOSFET N-CH 800V 4.1A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBE30STRLPBF	Cut Tape	700		1	1 $4.54 10 $2.998 100 $4.54 1000 $4.54 10000 $4.54	Buy Now
	IRFBE30STRLPBF	Digi-Reel	700		1	1 $4.54 10 $2.998 100 $4.54 1000 $4.54 10000 $4.54	Buy Now
	IRFBE30STRLPBF	Reel			800	1 - 10 - 100 - 1000 $1.66678 10000 $1.60625	Buy Now
Bristol Electronics	IRFBE30STRLPBF		575			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFBE30 MOSFET N-CH 800V 4.1A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFBE30	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IRFBE Datasheets (44)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFBE20	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFBE20	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-220AB	Original	PDF
IRFBE20	International Rectifier	TO-220 HEXFET Power MOSFET	Scan	PDF
IRFBE20	International Rectifier	TO-220 Plastic Package HEXFETs	Scan	PDF
IRFBE20	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFBE20	International Rectifier	Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)	Scan	PDF
IRFBE20	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFBE20	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFBE20L	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-262	Original	PDF
IRFBE20PBF	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFBE20PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A TO-220AB	Original	PDF
IRFBE20PBF	Vishay Semiconductors	MOSFET N-CH 800V 1.8A TO-220AB	Scan	PDF
IRFBE20PBF-BE3	Vishay Siliconix	MOSFET N-CH 800V 1.8A TO220AB	Original	PDF
IRFBE20STRL	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A D2PAK	Original	PDF

IRFBE20STRR	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1.8A D2PAK	Original	PDF
IRFBE22	International Rectifier	TO-220 HEXFET Power MOSFET	Scan	PDF
IRFBE22	International Rectifier	TO-220 Plastic Package HEXFETs	Scan	PDF
IRFBE30	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFBE30	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A TO-220AB	Original	PDF
IRFBE30	International Rectifier	TO-220 HEXFET Power MOSFET	Scan	PDF

IRFBE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
irfbe30 Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30
irfbe30 Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30
P-Channel MOSFET 800v Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International	Original	PDF	IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
94945 Abstract: No abstract text available Text: PD - 94945 IRFBE30PbF • Lead-Free Document Number: 91118 1/15/04 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF Document Number: 91118 www.vishay.com 3 IRFBE30PbF Document Number: 91118 www.vishay.com 4 IRFBE30PbF Document Number: 91118	Original	PDF	IRFBE30PbF O-220AB 12-Mar-07 94945
Untitled Abstract: No abstract text available Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International	Original	PDF	IRFBE30S IRFBE30L O-262 08-Mar-07
9014 transistor specification Abstract: AN609 IRFBE20 SiHFBE20 Text: IRFBE20_RC, SiHFBE20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFBE20 SiHFBE20 AN609, 20-Apr-10 9014 transistor specification AN609
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBE30 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220AB IRFBE30
diode IR 132 E Abstract: DIODE NU Text: PD - 95630 IRFBE20PbF • Lead-Free www.irf.com 1 8/4/04 IRFBE20PbF 2 www.irf.com IRFBE20PbF www.irf.com 3 IRFBE20PbF 4 www.irf.com IRFBE20PbF www.irf.com 5 IRFBE20PbF 6 www.irf.com IRFBE20PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations	Original	PDF	IRFBE20PbF O-220AB. O-220AB diode IR 132 E DIODE NU
IRFBE30 Abstract: SiHFBE30 SiHFBE30-E3 irfbe30pbf Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBE30 SiHFBE30-E3 irfbe30pbf
s8143 Abstract: IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S SiHFBE30S-E3 Text: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration	Original	PDF	IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-263) O-262) 18-Jul-08 s8143 IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S-E3
IRFBE20 Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) Configuration	Original	PDF	IRFBE20, SiHFBE20 O-220 12-Mar-07 IRFBE20
Untitled Abstract: No abstract text available Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	PDF	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 11-Mar-11
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	PDF	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU.

Untitled Abstract: No abstract text available Text: IRFBE30 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)4.1 I(DM) Max. (A) Pulsed I(D)2.6 @Temp (øC)100# IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ	Original	PDF	IRFBE30
Untitled Abstract: No abstract text available Text: IRFBE22 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)1.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)6.4 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)	Original	PDF	IRFBE22
400VID Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBE20 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220AB IRFBE20 400VID
Untitled Abstract: No abstract text available Text: PD - 94945 IRFBE30PbF • Lead-Free Document Number: 91118 1/15/04 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF Document Number: 91118 www.vishay.com 3 IRFBE30PbF Document Number: 91118 www.vishay.com 4 IRFBE30PbF Document Number: 91118	Original	PDF	IRFBE30PbF O-220AB 08-Mar-07
Untitled Abstract: No abstract text available Text: PD - 95630 IRFBE20PbF • Lead-Free Document Number: 91117 8/4/04 www.vishay.com 1 IRFBE20PbF Document Number: 91117 www.vishay.com 2 IRFBE20PbF Document Number: 91117 www.vishay.com 3 IRFBE20PbF Document Number: 91117 www.vishay.com 4 IRFBE20PbF Document Number: 91117	Original	PDF	IRFBE20PbF 08-Mar-07
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
AN609 Abstract: IRFBE30L IRFBE30S SiHFBE30S Text: IRFBE30S_RC, SiHFBE30S_RC, IRFBE30L_RC, SiHFBE30L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFBE30S SiHFBE30S IRFBE30L SiHFBE30L AN609, 20-Apr-10 AN609
Untitled Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
diode BYY 62 Abstract: MOSFET 800V 10A to 220 3l IRFBE20 BYY diode Text: PD-9.610A International S Rectifier IRFBE20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 800V ^DS on = lD = 1.8A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r provid e th e d e sig n e r	OCR Scan	PDF	IRFBE20 O-220 diode BYY 62 MOSFET 800V 10A to 220 3l IRFBE20 BYY diode

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IRFBE Datasheets (44)

IRFBE Datasheets Context Search

irfbe30

irfbe30

P-Channel MOSFET 800v

94945

Untitled

9014 transistor specification

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diode IR 132 E

IRFBE30

s8143

IRFBE20

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400VID

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AN609

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diode BYY 62