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    IRFD210 Price and Stock

    Vishay Siliconix IRFD210PBF

    MOSFET N-CH 200V 600MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD210PBF Bulk 9,009 1
    • 1 $1.35
    • 10 $0.858
    • 100 $0.5787
    • 1000 $0.5
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    RS IRFD210PBF Bulk 2,500
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    • 10000 $0.93
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    Bristol Electronics IRFD210PBF 1,350
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    New Advantage Corporation IRFD210PBF 1,500 1
    • 1 -
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    • 100 $0.6462
    • 1000 $0.6462
    • 10000 $0.6462
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    Rochester Electronics LLC IRFD210

    0.6A 200V 1.500 OHM N-CHANNEL
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    DigiKey IRFD210 Bulk 1,014 329
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    Vishay Siliconix IRFD210

    MOSFET N-CH 200V 600MA 4DIP
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    DigiKey IRFD210 Tube
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    Bristol Electronics IRFD210 16
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    Vishay Intertechnologies IRFD210PBF

    MOSFET N-CHANNEL 200V - Bulk (Alt: IRFD210PBF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFD210PBF Bulk 5,184 1
    • 1 $0.5
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    IRFD210PBF Bulk 10 Weeks, 1 Days 1
    • 1 $0.94
    • 10 $0.767
    • 100 $0.597
    • 1000 $0.597
    • 10000 $0.597
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    Verical IRFD210PBF 2,045 2,045
    • 1 -
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    • 10000 $0.3722
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    IRFD210PBF 212 58
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    • 100 $0.5463
    • 1000 $0.545
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    Newark IRFD210PBF Bulk 1,062 1
    • 1 $0.63
    • 10 $0.582
    • 100 $0.582
    • 1000 $0.504
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    RS IRFD210PBF Bulk 135 1
    • 1 $0.96
    • 10 $0.81
    • 100 $0.75
    • 1000 $0.67
    • 10000 $0.67
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    Bristol Electronics IRFD210PBF 2,300
    • 1 -
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    Quest Components IRFD210PBF 1,840
    • 1 $1.35
    • 10 $1.35
    • 100 $1.35
    • 1000 $0.54
    • 10000 $0.4725
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    TTI IRFD210PBF Tube 1,650 50
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    • 100 $0.533
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    TME IRFD210PBF 541 1
    • 1 $0.782
    • 10 $0.492
    • 100 $0.392
    • 1000 $0.352
    • 10000 $0.352
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    Chip1Stop IRFD210PBF 2,045
    • 1 -
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    • 100 $0.433
    • 1000 $0.262
    • 10000 $0.262
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    IRFD210PBF Tube 212
    • 1 $0.441
    • 10 $0.44
    • 100 $0.437
    • 1000 $0.436
    • 10000 $0.436
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    EBV Elektronik IRFD210PBF 300 9 Weeks 100
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    Renesas Electronics Corporation IRFD210

    - Rail/Tube (Alt: IRFD210)
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    Avnet Americas IRFD210 Tube 4 Weeks 396
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    • 1000 $0.8973
    • 10000 $0.87202
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    Find more IRFD210 price and stock on Findchips.com

    IRFD210 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFD210 Intersil 0.6A, 200V, 1.500 ?, N-Channel Power MOSFET Original PDF
    IRFD210 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD210 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 600MA 4-DIP Original PDF
    IRFD210 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD210 Harris Semiconductor 0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS Scan PDF
    IRFD210 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD210 International Rectifier Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A) Scan PDF
    IRFD210 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD210 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD210 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFD210 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, .6A, Pkg Style HEXDIP Scan PDF
    IRFD210 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD210 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRFD210 Motorola Switchmode Datasheet Scan PDF
    IRFD210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD210 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD210 Unknown FET Data Book Scan PDF
    IRFD210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD210 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD210

    Abstract: TB334
    Text: IRFD210 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFD210 TB334 TA17442. IRFD210 TB334

    IRFD210

    Abstract: No abstract text available
    Text: IRFD210 Data Sheet Title FD 0 bt 6A, 0V, 00 m, an- 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		PDF IRFD210 TB334 IRFD210

    Untitled

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 2002/95/EC 18-Jul-08

    SiHFD210

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 2002/95/EC 11-Mar-11

    IRFD210

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 2002/95/EC 18-Jul-08 IRFD210

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95924 IRFD210PbF • Lead-Free Document Number: 91129 10/27/04 www.vishay.com 1 IRFD210PbF Document Number: 91129 www.vishay.com 2 IRFD210PbF Document Number: 91129 www.vishay.com 3 IRFD210PbF Document Number: 91129 www.vishay.com 4 IRFD210PbF Document Number: 91129


    Original     		PDF IRFD210PbF 12-Mar-07 IRFD120

    IRFD210

    Abstract: SiHFD210
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 18-Jul-08 IRFD210

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95924 IRFD210PbF • Lead-Free 1 IRFD210PbF 2 IRFD210PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE


    Original     		PDF IRFD210PbF IRFD120 IRFD120

    IRFD210

    Abstract: TB334
    Text: IRFD210 Data Sheet January 2002 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 0.6A, 200V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		PDF IRFD210 IRFD210 TB334

    AN609

    Abstract: IRFD210
    Text: IRFD210_RC, SiHFD210_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFD210 SiHFD210 AN609, 0426m 8968m 4501m 6212m 25-Oct-10 AN609

    irfd210pbf

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfd210pbf

    1RFD210

    Abstract: IRFD210
    Text: International [rag Rectifier PD-9.386G IRFD210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements V d ss = 2 0 0 V


    OCR Scan     		PDF IRFD210 1RFD210

    Untitled

    Abstract: No abstract text available
    Text: IRFD210 Semiconductor Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1-500i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF IRFD210 1-500i2 TA17442. TB334

    C38 06 DIODE

    Abstract: D82BN2
    Text: IRFD210,211 D82BN2.M2 FIT HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.6 AMPERES


    OCR Scan     		PDF IRFID210 D82BN2 C38 06 DIODE

    IRFD210

    Abstract: diode 3a05 IRFD213
    Text: IRFD210, IRFD213 « I S ilic o n ix J-W in c o rp o ra te d N-Channel Enhancement Mode Transistors "'Z°i-OS 4-PIN DIP Similar to TO-250 TOP VIEW PRODUCT SUMMARY PART NUMBER V(BR|DSS fDS(ON) (n> Id (A) 1RFD210 200 1.5 0.60 IRFD213 150 2.4 0.45 1 Œ s 2 CC


    OCR Scan     		PDF IRFD210, IRFD213 O-250) 1RFD210 IRFD213 IRFD210 diode 3a05

    IRFD

    Abstract: IRFD210 D210 IRFD211 IRFD212 IRFD213
    Text: Standard Power MOSFETs- IRFD210, IRFD211, IRFD212, IRFD213 File Number 2316 Power M O S Field-Effect Transistore N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistore 0.45 A and 0.6 A, 150 V - 200 V


    OCR Scan     		PDF IRFD210, IRFD211, IRFD212, IRFD213 92CS-33741 IRFD213 IRFD IRFD210 D210 IRFD211 IRFD212

    relay ras 1210

    Abstract: tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R IRFD212R IRFD213R 03a s4
    Text: Rugged Pow er M O SFETs File Num ber 2037 IRFD210R, IRFD211R, IRFD212R, IRFD213R Avalanche Energy Rated N-Channel Power MOSFETs 0.6A and 0.45A, 150V-200V rDS o n = 1 .5 0 a nd 2 .4 0 N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		PDF IRFD210R, IRFD211R, IRFD212R, IRFD213R 50V-200V 2CS-42CSÂ IRFD212R IRFD213R relay ras 1210 tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R 03a s4

    TB334

    Abstract: IRFD210 IRFD211 IRFD212 IRFD213 rfd2
    Text: i H A R R IRFD210, IRFD211, IRFD212, IRFD213 i s s e m i c o n d u c t o r 0.6A and 0.45A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.6A and 0.45A, 150V and 200V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and


    OCR Scan     		PDF IRFD210, IRFD211, IRFD212, IRFD213 TB334 TB334 IRFD210 IRFD211 IRFD212 IRFD213 rfd2

    sj 76a

    Abstract: IRFD210 h5uc RD3-01
    Text: PD-9.386G International S Rectifier IRFD210 HEXFET Pow er M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 200V


    OCR Scan     		PDF IRFD210 12yjr sj 76a IRFD210 h5uc RD3-01

    Untitled

    Abstract: No abstract text available
    Text: International h ?r Rectifier HEXFET Power M O S F E T • • • • • • • • I 4655452 0015D34 *nb « I N R PD-9.386G IRFD210 INTERNATIONAL Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling


    OCR Scan     		PDF 0015D34 IRFD210

    irfd210

    Abstract: 440 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD210 IRFD213 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode • Ideal for Peripheral Control Applications • Intermediate 1 Watt Power Capability • Standard DIP Outline |T I I TM OS


    OCR Scan     		PDF IRFD210 IRFD213 IRFD210 IRFD213 440 motorola