diode 222r

Abstract: MOSFET 4407 a circuit 4407
Contextual Info: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*

mosfet k 2038

Abstract: IRFD222R 250M IRFD220R IRFD221R IRFD223R
Contextual Info: Rugged Power M O S F E T s_ File Num ber 2038 IRFD220R, IRFD221R, IRFD222R, IRFD223R Avalanche Energy Rated N-Channel Power MOSFETs 0.8A a n d 0.7A, 1 5 0 V -2 0 0 V ros on = 0.8fi a n d 1 .2 0 N -C H A N N E L E N H A N C E M E N T M O D E

Contextual Info: • 4302271 0054110 3^fl ■ HAS IRFD220/221/222/223 IRFD220R/221R/222R/223R 2 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4-P IN DIP • 0.7 A and 0.8A , 150V - 2 0 0V TOP VIEW • ro s o n ) = 0 .8 fl and 1.2f2 • Single Pulse A valanche Energy R ated*

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

Contextual Info: H A R R I S SEflICOND SECT OR böE D • 4 3 0 2 27 1 0 0 5 1 0 1 0 TTfi ■ PCF8N20W P^jFfäN20D H a r r is HAS S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated 'if • Contact Metallization - Gate and Source - Aluminum