IRFD2Z0 Search Results

IRFD2Z0 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFD2Z0		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
IRFD2Z0		General Electric	Power Transistor Data Book 1985		Scan	PDF
IRFD2Z0		Harris Semiconductor	Power MOSFET Data Book 1990		Scan	PDF
IRFD2Z0		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
IRFD2Z0		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

IRFD2Z0 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
irfd2z0 Abstract: 0n 4409 diode 4408 Text: h a r r is IRFD2Z0, IRFD2Z1 IRFD2Z2, IRFD2Z3 N -Channel Enhancem ent-M ode Power Field-Effect Transistors A ug ust 1 9 9 1 Package Features 4 - P IN D IP T O P V IEW • 0.30A and 0.32A, 150V - 200V • rDS on = 5.0H and 6.5H • S O A is Pow er-Dissipation Limited	OCR Scan	92CS-43539 irfd2z0 0n 4409 diode 4408	PDF
IRFD2Z3 Abstract: IRFD2Z0 A0025 43538 Text: Standard Power MOSFETs- IRFD2Z0, IRFD2Z1, IRFD2Z2, IRFD2Z3 File N u m b e r 2329 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -CHANNEL EN HANCEM ENT MODE 0.30 A and Cl.32 A, 150 V- 200 V	OCR Scan	9ZCS-33741 92CS-45S39 IRFD2Z3 IRFD2Z0 A0025 43538	PDF
IRFD2Z0 Abstract: D82AN2 Text: IRFD2Z0,2Z1 D82AN2.M2 GW HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability. 0.32 AMPERES	OCR Scan	D82AN2 00A///S, irfd2z1/d82am2 irfd2z0/d82an2 100ms IRFD2Z0	PDF
Untitled Abstract: No abstract text available Text: 4 3 0 5 57 1 0 0 S 4 1 1 5 17T • H a r r is HAS IRFD2Z0, IRFD2Z1 IRFD2Z2, IRFD2Z3 N-Channel Enhancement-Mode Power Field-Effect Transistors A ug ust 1 9 9 1 Features Package 4 -P IN DIP TOP VIEW • 0.30A and 0.32A, 150V - 200V • rD S on — 5 .O il and 6 .5 0	OCR Scan	92CS-4Ã	PDF
4311 mosfet transistor Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760	OCR Scan	2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r	PDF
1RFP250 Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241 Text: T H O M SO N/ D I S T R I B U T O R SflE D • =¡021,073 0 0 05 70 b ZIE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued Package Maximum Ratings b v DSS (V) ■d s (A) rDS(ON) OHMS 150 4 4.50 5 5.5 1.20 8 9 16 18 25 30 200 0.25 0.32	OCR Scan	000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241	PDF