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    IRFD321 Search Results

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    IRFD321 Price and Stock

    Harris Semiconductor IRFD321

    IRFD321 - 0.5A, 350V, 1.8 OHM, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFD321 66 1
    • 1 $3.49
    • 10 $3.49
    • 100 $3.28
    • 1000 $2.97
    • 10000 $2.97
    		Buy Now

    IRFD321 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD321 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD321 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD321 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD321 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD321 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD321(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD321R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD321R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD321R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD321 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD321 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)500m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		IRFD321 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD321R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)500m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ


    Original     		IRFD321R PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD320, IRFD321, IRFD322, IRFD323 S E M I C O N D U C T O R 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRFD320, IRFD321, IRFD322, IRFD323 TA17404. PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    IRFD321

    Abstract: IRFD322 IRFD323 transistor d722 IRFD320 irf032
    Text: Standard Power MOSFETs- IRFD320, IRFD321, IRFD322, IRFD323 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 0.5 A and 0.4 A, 350 V - 400 V


    OCR Scan     		IRFD320, IRFD321, IRFD322, IRFD323 92CS-33741 IRFD323 IRFD321 IRFD322 transistor d722 IRFD320 irf032 PDF

    irfd320

    Abstract: No abstract text available
    Text: H a IRFD320, IRFD321, IRFD322, IRFD323 r r i s ” “ I CONDUCTOE 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRFD320, IRFD321, IRFD322, IRFD323 TA1740GE RFD322, irfd320 PDF

    Untitled

    Abstract: No abstract text available
    Text: w vys S IRFD320, IRFD321, IRFD322, IRFD323 S e m ico n d ucto r y y 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 0.5A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRFD320, IRFD321, IRFD322, IRFD323 PDF

    irf transistors

    Abstract: irf032 721a GF2D05 IRFD320R IRFD321R IRFD322R IRFD323R 721R IRF 100A
    Text: Rugged Power M O SFETs_ IRFD320R, IRFD321R, IRFD322R, IRFD323R File Number 2040 Avalanche Energy Rated N-Channel Power MOSFETs 0.5A and 0.4A, 350V-400V rDS on = 1.80 and 2.50 N -C H A N N E L E N H A N C E M E N T M O D E Features:


    OCR Scan     		IRFD320R, IRFD321R, IRFD322R, IRFD323R 50V-400V 92CS-Â IRFD322R IFIFD323R irf transistors irf032 721a GF2D05 IRFD320R IRFD321R 721R IRF 100A PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    FD-321

    Abstract: No abstract text available
    Text: • 43D2271 005*4125 fili ■ OR HARRIS HAS IR FD 320/321/322/323 IRFD320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features • Package 4 - P IN D IP 0.5A and Q.4A, 350V - 400V T O P VIE W • rDS on = 1-8H and 2 .5 fl


    OCR Scan     		43D2271 IRFD320R/321R /322R /323R IRFD320, 1RFD332, IRFD322, IRFD323 IRFD320R, IRFD332R, FD-321 PDF

    D82CQ2

    Abstract: No abstract text available
    Text: [FIT FIELD EFFECT POWER TRANSISTOR IRFD320.321 D82CQ2.Q1 0.5 AMPERES 400, 350 VOLTS RPS ON = 1-8 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		D82CQ2 00A///s, IRFD321/D82CQ1 IRFD320/D82CQ2 100ms PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF

    1RFP250

    Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241
    Text: T H O M SO N/ D I S T R I B U T O R SflE D • =¡021,073 0 0 05 70 b ZIE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued Package Maximum Ratings b v DSS (V) ■d s (A) rDS(ON) OHMS 150 4 4.50 5 5.5 1.20 8 9 16 18 25 30 200 0.25 0.32


    OCR Scan     		000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241 PDF