IRFD9120
Abstract: IRFD9120PBF MOSFET IRFd9120
Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration
|
Original
|
IRFD9120,
SiHFD9120
2002/95/EC
18-Jul-08
IRFD9120
IRFD9120PBF
MOSFET IRFd9120
|
PDF
|
IRFD9120
Abstract: irfd9120pbf
Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration
|
Original
|
IRFD9120,
SiHFD9120
2002/95/EC
11-Mar-11
IRFD9120
irfd9120pbf
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration
|
Original
|
IRFD9120,
SiHFD9120
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
MOSFET IRFd9120
Abstract: IRFD9120 IRFD9120 mosfet
Text: IRFD9120 Data Sheet July 1999 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET 2285.3 Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
|
Original
|
IRFD9120
MOSFET IRFd9120
IRFD9120
IRFD9120 mosfet
|
PDF
|
IRFD9120
Abstract: MOSFET IRFd9120
Text: IRFD9120 Data Sheet January 2002 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
|
Original
|
IRFD9120
TA17501.
IRFD9120
MOSFET IRFd9120
|
PDF
|
IRFD9120
Abstract: No abstract text available
Text: IRFD9120 Data Sheet Title FD 20 bt A, 0V, 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
|
Original
|
IRFD9120
TA17501.
IRFD9120
|
PDF
|
IRFD9120
Abstract: IRFD9120PBF vishay marking irfd9120 SiHFD9120
Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration
|
Original
|
IRFD9120,
SiHFD9120
18-Jul-08
IRFD9120
IRFD9120PBF
vishay marking irfd9120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration
|
Original
|
IRFD9120,
SiHFD9120
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
IRFD9120
Abstract: No abstract text available
Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration
|
Original
|
IRFD9120,
SiHFD9120
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFD9120
|
PDF
|
irfd9120
Abstract: No abstract text available
Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration
|
Original
|
IRFD9120,
SiHFD9120
2002/95/EC
18-Jul-08
irfd9120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration
|
Original
|
IRFD9120,
SiHFD9120
12-Mar-07
|
PDF
|
IRFD9120
Abstract: No abstract text available
Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration
|
Original
|
IRFD9120,
SiHFD9120
2002/95/EC
11-Mar-11
IRFD9120
|
PDF
|
irfd9120
Abstract: SiHFD9120
Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration
|
Original
|
IRFD9120,
SiHFD9120
18-Jul-08
irfd9120
|
PDF
|
IRFD9120
Abstract: FD9120 MOSFET IRFd9120 ON950 IF-D91
Text: T em ic IRFD9120/9123 Siliconix P-Channel Enhancement-Mode Transistors Product Summary Part Number V BR I)SS (V) n>S(on| (ß> IRFD9120 -100 0.60 -1 .0 IRFD9123 -6 0 0.80 -0 .8 vi I d (A) S p 4-Pin DIP D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)
|
OCR Scan
|
irfd9120/9123
IRFD9120
IRFD9123
IBFD9120
1RFIW123
IFD912(
FD912:
P-36852â
25M735
Glfl23a
FD9120
MOSFET IRFd9120
ON950
IF-D91
|
PDF
|
|
|
IRFD9120
Abstract: No abstract text available
Text: PD-9.3311 International S Rectifier IRFD9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching VDSS= -100V R DS on =
|
OCR Scan
|
|
PDF
|
IRFD9120
Abstract: No abstract text available
Text: PD-9.3311 International S Rectifier IRFD9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching VDSS= -100V R DS on =
|
OCR Scan
|
|
PDF
|
IRF7205
Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY
|
OCR Scan
|
BSS84
BSS92
BS250
BSS83
IRF5210S
T0263
IRFD9210
IRFD9220
IRFD9110
IRFD9120
IRF7205
IRF7342
IXTH7P50
T0-220AB
irfp9240
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFD9120 Semiconductor April 1999 Data Sheet -1.0A, -100V, 0.6 Ohm, P-Channel Power MOSFET • -1.0A ,-100V • r DS ON = ° - 6 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
|
OCR Scan
|
IRFD9120
-100V,
-100V
TA17501.
TB334
|
PDF
|
marking B33 diode
Abstract: MOSFET IRFd9120 IRFD9120
Text: IINR 4ÔSSMS2 OOlSObH b33 International i«R Rectifier PD-9.3311 IRFD9120 HEXFET Power M O S F E T bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature
|
OCR Scan
|
IRFD9120
l50Ktl
marking B33 diode
MOSFET IRFd9120
IRFD9120
|
PDF
|
IRF09120
Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
Text: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP
|
OCR Scan
|
T-37-25
IRFD9120
IRFD91S3
C-169
IRFD9120,
IRFD9123
C-170
IRF09120
RFD9120
IRFD9120 N CHANNEL
fd9120
MOSFET IRFd9120
Power MOSFET in a HEXDIP package
IRFD 9120
tc 9123
|
PDF
|
irfd9123
Abstract: tc 9123 IRFD 123
Text: m IR F D 9 1 2 0 IR F D 9 1 2 3 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E TOP VIEW • -1.0 A and -0.8A , -8 0 V and -100V • rDS ON = 0-6H and 0 .8 ri • Single Pulse Avalanche Energy Rated
|
OCR Scan
|
-100V
IRFD9120
IRFD9123
tc 9123
IRFD 123
|
PDF
|
1rfd9120
Abstract: No abstract text available
Text: • H 4 3 D 5 E7 1 OOSMSfl? 7TT ■ a HAS I R F D r r i s 9 1 2 0 I R F D 9 1 2 3 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -1.0 A and -0.8A , -8 0 V and -10 0 V TO P VIEW • rDS ON = 0 .6 H and 0 .8 ÎI
|
OCR Scan
|
IRFD9120
IRFD9123
JRFD9120,
1rfd9120
|
PDF
|
IRFD620
Abstract: IRFD420 IRFD9220 h10 npn
Text: International lo i Rectifier HEXFET Power MOSFETs HEXDips Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. Part Number IRF0C10LC V BR d s s Drain-to-Source ROS(on) lg Continuous On-State Drain Current
|
OCR Scan
|
IRF0C10LC
IRFD014
IRFD024
IRFD110
IRFD120
IRFD210
IRFD220
IRFD214
IRFD224
IRFD310
IRFD620
IRFD420
IRFD9220
h10 npn
|
PDF
|
IRF0110
Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
Text: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123
|
OCR Scan
|
IRFD015
IRFD014
IRFD025
IRFD024
M0-001AN
IRFD113
IRFD123
IRF0110
IRF0120
IRFD213
IRFD9123
irfu320
THOMSON DISTRIBUTOR 58e d
IRFD1Z0
IRFD9014
IRFU121
irfu310
|
PDF
|
